公开(公告)号：US20220157887A1

公开(公告)日：2022-05-19

申请号：US17380331

申请日：2021-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Hwan LEE ,  Kwang Seok KIM ,  Yong Seok KIM ,  Il Gweon KIM ,  Kil Ho LEE

IPC: H01L27/22 ,  G11C11/16

Abstract: A three-dimensional semiconductor memory device is provided. The semiconductor memory device includes first horizontal conductive lines on a substrate in a first direction, each of the first horizontal conductive lines extending in a second direction different from the first direction, second horizontal conductive lines stacked on the substrate in the first direction, each of the second horizontal conductive lines extending in the second direction, a vertical conductive line between the first horizontal conductive line and the second horizontal conductive line and extending in the first direction, a plurality of first magnetic tunnel junction patterns between the vertical conductive line and each of the first horizontal conductive lines, and a plurality of second magnetic tunnel junction patterns between the vertical conductive lines and each of the second horizontal conductive lines. The first horizontal conductive lines and the second horizontal conductive lines are spaced apart from each other in a third direction.

公开(公告)号：US20210305497A1

公开(公告)日：2021-09-30

申请号：US17344206

申请日：2021-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Seok KIM ,  Young Man JANG ,  Ung Hwan PI

IPC: H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L27/22

Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.

公开(公告)号：US20200251650A1

公开(公告)日：2020-08-06

申请号：US16685415

申请日：2019-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Seok KIM ,  Young Man Jang ,  Ung Hwan PI

IPC: H01L43/10 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16

Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.

公开(公告)号：US20230111057A1

公开(公告)日：2023-04-13

申请号：US17734455

申请日：2022-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Chul LEE ,  Kwang Seok KIM ,  Jeong-Heon PARK

IPC: H01L43/02 ,  H01L43/10

Abstract: A magnetic tunnel junction device includes a pinned magnetic layer, a free magnetic layer, and a tunnel barrier layer between the pinned and free magnetic layers. The free magnetic layer includes a first free layer, a second free layer spaced apart from the tunnel barrier layer with the first free layer therebetween, and a spacer layer between the first free layer and the second free layer. The first free layer and the second free layer are antiferromagnetically coupled to each other by the spacer layer, and each of the first free layer and the second free layer has a magnetization direction substantially perpendicular to an interface between the free magnetic layer and the tunnel barrier layer. A thermal stability of the free magnetic layer is in a range of 0 to 15.