公开(公告)号：US20200251650A1

公开(公告)日：2020-08-06

申请号：US16685415

申请日：2019-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Seok KIM ,  Young Man Jang ,  Ung Hwan PI

IPC: H01L43/10 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16

Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.

公开(公告)号：US11088319B2

公开(公告)日：2021-08-10

申请号：US16685415

申请日：2019-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Seok Kim ,  Young Man Jang ,  Ung Hwan Pi

IPC: H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01F10/32

Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.

公开(公告)号：US11706998B2

公开(公告)日：2023-07-18

申请号：US17344206

申请日：2021-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Seok Kim ,  Young Man Jang ,  Ung Hwan Pi

IPC: H10N50/85 ,  G11C11/16 ,  H10B61/00 ,  H10N50/80 ,  H01F10/32

CPC classification number: H10N50/85 ,  G11C11/161 ,  G11C11/1659 ,  H10B61/22 ,  H10N50/80 ,  H01F10/3286

Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.