公开(公告)号：US20210057478A1

公开(公告)日：2021-02-25

申请号：US16826455

申请日：2020-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Min Lee ,  Doo Won Kwon ,  Seok Jin Kwon ,  Kyoung Won Na ,  In Gyu Baek

IPC: H01L27/146

Abstract: An image sensor includes a substrate, first and second insulating structures, a first wiring structure, a through via, and first and second connection patterns. The substrate includes a sensor array region and a pad region. The first insulating structure is disposed on a second surface of the substrate. The first wiring structure is formed in the first insulating structure and includes first conductive layers and first vias. The through via passes through the substrate in the pad region and connects to the first wiring structure. The first connection pattern is connected to the first wiring structure. The second insulating structure is disposed on a fourth surface of the first insulating structure. The second connection pattern is connected to the first connection pattern. The first conductive layers include a first wiring, and a second wiring spaced farther from the substrate than the first wiring. The through via contacts the second wiring.

公开(公告)号：US20130092980A1

公开(公告)日：2013-04-18

申请号：US13650947

申请日：2012-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung Won Na ,  Pil-Kyu Kang ,  Seong Gu Kim ,  Yong Hwack Shin ,  Ho-Chul Ji ,  Jung Hyung Pyo ,  Kyoung Ho Ha

IPC: H01L31/0352

CPC classification number: H01L31/02327 ,  G02B6/12004 ,  G02B6/132 ,  G02B6/136 ,  G02B6/30 ,  G02B6/305 ,  H01L31/103 ,  H01L31/1804 ,  H01L31/1808 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photodetector structure can include a silicon substrate and a silicon layer on the silicon substrate, that can include a first portion of an optical transmission medium that further includes a silicon cross-sectional transmission face. A germanium layer can be on the silicon substrate and can include a second portion of the optical transmission medium, adjacent to the first portion can include a germanium cross-sectional transmission face butt-coupled to the silicon cross-sectional transmission face.

Abstract translation: 光电检测器结构可以包括硅衬底和硅衬底上的硅层，其可以包括进一步包括硅横截面透射面的光传输介质的第一部分。 锗层可以在硅衬底上，并且可以包括光传输介质的第二部分，邻近第一部分可以包括与硅横截面透射面对接的锗横截面透射面。

公开(公告)号：US08866187B2

公开(公告)日：2014-10-21

申请号：US13650947

申请日：2012-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung Won Na ,  Pil-Kyu Kang ,  Seong Gu Kim ,  Yong Hwack Shin ,  Ho-Chul Ji ,  Jung Hyung Pyo ,  Kyoung Ho Ha

IPC: H01L31/102 ,  H01L31/0232 ,  H01L31/18 ,  G02B6/12 ,  H01L31/103 ,  G02B6/132 ,  G02B6/136

CPC classification number: H01L31/02327 ,  G02B6/12004 ,  G02B6/132 ,  G02B6/136 ,  G02B6/30 ,  G02B6/305 ,  H01L31/103 ,  H01L31/1804 ,  H01L31/1808 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photodetector structure can include a silicon substrate and a silicon layer on the silicon substrate, that can include a first portion of an optical transmission medium that further includes a silicon cross-sectional transmission face. A germanium layer can be on the silicon substrate and can include a second portion of the optical transmission medium, adjacent to the first portion can include a germanium cross-sectional transmission face butt-coupled to the silicon cross-sectional transmission face.

Abstract translation: 光电检测器结构可以包括硅衬底和硅衬底上的硅层，其可以包括进一步包括硅横截面透射面的光传输介质的第一部分。 锗层可以在硅衬底上，并且可以包括光传输介质的第二部分，邻近第一部分可以包括与硅横截面透射面对接的锗横截面透射面。

公开(公告)号：US11417699B2

公开(公告)日：2022-08-16

申请号：US16826455

申请日：2020-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Min Lee ,  Doo Won Kwon ,  Seok Jin Kwon ,  Kyoung Won Na ,  In Gyu Baek

IPC: H01L27/146

Abstract: An image sensor includes a substrate, first and second insulating structures, a first wiring structure, a through via, and first and second connection patterns. The substrate includes a sensor array region and a pad region. The first insulating structure is disposed on a second surface of the substrate. The first wiring structure is formed in the first insulating structure and includes first conductive layers and first vias. The through via passes through the substrate in the pad region and connects to the first wiring structure. The first connection pattern is connected to the first wiring structure. The second insulating structure is disposed on a fourth surface of the first insulating structure. The second connection pattern is connected to the first connection pattern. The first conductive layers include a first wiring, and a second wiring spaced farther from the substrate than the first wiring. The through via contacts the second wiring.

公开(公告)号：US09954134B2

公开(公告)日：2018-04-24

申请号：US14072118

申请日：2013-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung Won Na ,  Yoon Dong Park ,  Sung Dong Suh ,  Dong Mo Im

IPC: H01L31/18 ,  G01N21/77 ,  G01N33/483

CPC classification number: H01L31/18 ,  G01N21/7746 ,  G01N33/483

Abstract: An optical biosensor, and a method of manufacturing the same, includes a first layer, a second layer stacked on the first layer, a first grating coupler within the first layer and the second layer, and a second grating coupler within the first layer. The first grating coupler is configured to couple a light pattern provided to a front side of the optical biosensor. The second grating coupler is configured to output the light pattern coupled by the first grating coupler to a photoelectric conversion element on a rear side of the optical biosensor.