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公开(公告)号:US10025177B2
公开(公告)日:2018-07-17
申请号:US15230356
申请日:2016-08-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Mindy Lee , Jung H. Woo
Abstract: A method of making a photomask includes constructing a transmission cross coefficient (TCC) matrix representing an illumination source for supplying light to transmit through the photomask and a pupil for focusing the transmitted light onto a target substrate to produce a set of main features, generating kernels through decomposition of the TCC matrix, selecting ones of the kernels having odd symmetry, generating a field map kernel as a sum of self-convolutions of the odd symmetry kernels, generating a first field map by convolving an area of the photomask corresponding to the set of main features with the field map kernel, and making the photomask corresponding to the first field map. The method may include assigning first sub-resolution assist features (SRAFs) to those portions of the photomask area having corresponding said first field map values exceeding a nonnegative threshold, and making the photomask corresponding to the main features and first SRAFs.
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公开(公告)号:US20240220700A1
公开(公告)日:2024-07-04
申请号:US18210836
申请日:2023-06-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yangwoo Heo , Majd Kuteifan , Mindy Lee , SOOYONG LEE , JEEYONG LEE
IPC: G06F30/392
CPC classification number: G06F30/392 , G06F2119/02
Abstract: Provided is a process model generating method including: obtaining a target layout for a process of a semiconductor device and a plurality of sublayers representing a substructure of the semiconductor device; determining a lateral feature and a vertical feature of the target layout; and generating a correction model for the target layout based on the lateral feature and the vertical feature.
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公开(公告)号:US12169678B2
公开(公告)日:2024-12-17
申请号:US17510652
申请日:2021-10-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: Useong Kim , Bayram Yenikaya , Mindy Lee , Xin Zhou , Hee-Jun Lee , Woo-Yong Cho
IPC: G06F30/398 , G06V10/44 , G06V10/88
Abstract: Disclosed is an operating method of an electronic device for manufacture of a semiconductor device. The operating method includes receiving a layout image of the semiconductor device, generating an intermediate image by generating assist features based on main features of the layout image, evaluating a process result by performing simulation based on the intermediate image, and correcting the intermediate image by correcting shapes of the main features and/or the assist features of the intermediate image based on the process result.
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公开(公告)号:US20170269470A1
公开(公告)日:2017-09-21
申请号:US15230356
申请日:2016-08-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Mindy Lee , Jung H. Woo
CPC classification number: G03F1/70 , G03F1/36 , G06F17/5072 , G06F17/5081
Abstract: A method of making a photomask includes constructing a transmission cross coefficient (TCC) matrix representing an illumination source for supplying light to transmit through the photomask and a pupil for focusing the transmitted light onto a target substrate to produce a set of main features, generating kernels through decomposition of the TCC matrix, selecting ones of the kernels having odd symmetry, generating a field map kernel as a sum of self-convolutions of the odd symmetry kernels, generating a first field map by convolving an area of the photomask corresponding to the set of main features with the field map kernel, and making the photomask corresponding to the first field map. The method may include assigning first sub-resolution assist features (SRAFs) to those portions of the photomask area having corresponding said first field map values exceeding a nonnegative threshold, and making the photomask corresponding to the main features and first SRAFs.
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