Efficient way to creating process window enhanced photomask layout

    公开(公告)号:US10025177B2

    公开(公告)日:2018-07-17

    申请号:US15230356

    申请日:2016-08-05

    Abstract: A method of making a photomask includes constructing a transmission cross coefficient (TCC) matrix representing an illumination source for supplying light to transmit through the photomask and a pupil for focusing the transmitted light onto a target substrate to produce a set of main features, generating kernels through decomposition of the TCC matrix, selecting ones of the kernels having odd symmetry, generating a field map kernel as a sum of self-convolutions of the odd symmetry kernels, generating a first field map by convolving an area of the photomask corresponding to the set of main features with the field map kernel, and making the photomask corresponding to the first field map. The method may include assigning first sub-resolution assist features (SRAFs) to those portions of the photomask area having corresponding said first field map values exceeding a nonnegative threshold, and making the photomask corresponding to the main features and first SRAFs.

    EFFICIENT WAY TO CREATING PROCESS WINDOW ENHANCED PHOTOMASK LAYOUT

    公开(公告)号:US20170269470A1

    公开(公告)日:2017-09-21

    申请号:US15230356

    申请日:2016-08-05

    CPC classification number: G03F1/70 G03F1/36 G06F17/5072 G06F17/5081

    Abstract: A method of making a photomask includes constructing a transmission cross coefficient (TCC) matrix representing an illumination source for supplying light to transmit through the photomask and a pupil for focusing the transmitted light onto a target substrate to produce a set of main features, generating kernels through decomposition of the TCC matrix, selecting ones of the kernels having odd symmetry, generating a field map kernel as a sum of self-convolutions of the odd symmetry kernels, generating a first field map by convolving an area of the photomask corresponding to the set of main features with the field map kernel, and making the photomask corresponding to the first field map. The method may include assigning first sub-resolution assist features (SRAFs) to those portions of the photomask area having corresponding said first field map values exceeding a nonnegative threshold, and making the photomask corresponding to the main features and first SRAFs.

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