公开(公告)号：US12027523B2

公开(公告)日：2024-07-02

申请号：US17468139

申请日：2021-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inhyun Song ,  Junggil Yang ,  Minju Kim

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/786

CPC classification number: H01L27/092 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/82385 ,  H01L27/0924 ,  H01L29/42392 ,  H01L29/4908 ,  H01L21/28088 ,  H01L29/78696

Abstract: Disclosed are semiconductor devices and their fabricating methods. The semiconductor device comprises first and second active patterns, a first channel pattern including first semiconductor patterns, a second channel pattern including second semiconductor patterns, a gate electrode on the first and second channel patterns, and a gate dielectric layer between the gate electrode and the first and second channel patterns. The gate electrode includes a first inner gate electrode between the first semiconductor patterns, a second inner gate electrode between the second semiconductor patterns, and an outer gate electrode outside the first and second semiconductor patterns. The first and second inner gate electrodes are on bottom surfaces of uppermost first and second semiconductor patterns. The outer gate electrode is on top surfaces and sidewalls of the uppermost first and second semiconductor patterns. The first and second inner gate electrodes have different work functions.

公开(公告)号：US11710739B2

公开(公告)日：2023-07-25

申请号：US17372896

申请日：2021-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junggil Yang ,  Minju Kim ,  Donghyi Koh

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L29/0673 ,  H01L29/7851

Abstract: An integrated circuit device including a substrate including first and second device regions; a first fin active region on the first device region; a second fin active region on the second device region; an isolation film covering side walls of the active regions; gate cut insulating patterns on the isolation film on the device regions; a gate line extending on the fin active regions, the gate line having a length limited by the gate cut insulating patterns; and an inter-region insulating pattern on the isolation film between the fin active regions and at least partially penetrating the gate line in a vertical direction, wherein the inter-region insulating pattern has a bottom surface proximate to the substrate, a top surface distal to the substrate, and a side wall linearly extending from the bottom to the top surface.

公开(公告)号：US20250046587A1

公开(公告)日：2025-02-06

申请号：US18636099

申请日：2024-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehyun Kim ,  Chansoo Kang ,  Minju Kim ,  Daewon Kang ,  Dougyong Sung ,  Jungmo Yang ,  Sejin Oh

IPC: H01J37/32 ,  H01L21/67

Abstract: The present disclosure relates to plasma diagnostic devices. An example plasma diagnostic device includes a pinhole through which a first optical signal passes, an optical device in which the first optical signal is incident and the first optical signal is converted into a second optical signal, a filter configured to filter the second optical signal and to output a third optical signal of a specific wavelength band, and a sensor configured to monitor a distribution of the first optical signal, the second optical signal, and the third optical signal.

公开(公告)号：US20250085445A1

公开(公告)日：2025-03-13

申请号：US18633031

申请日：2024-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chansoo Kang ,  Daewon Kang ,  Minju Kim ,  Tae-Hyun Kim ,  Sang Ki Nam ,  Dougyong Sung ,  Jungmo Yang ,  Sejin Oh ,  Keonhee Lim ,  Junho Im

IPC: G01T1/36 ,  G01T1/20 ,  H01L21/67

Abstract: A substrate processing apparatus includes a process chamber providing a process space, a stage located in the process chamber and configured to support a substrate, a window coupled to a side of the process chamber, and a scintillator layer coupled to one side surface of the window. The scintillator layer covers a portion of the one side surface of the window which is less than the full window surface. A second surface corresponding to another portion of the one side surface of the window is exposed. Light emitted by a plasma in the process space passes through the window and is collected by an optical system and analyzed. Ultraviolet light passing through the scintillator is converted to longer wavelength, generally visible, light. Comparing the light passing through the bare window with the light passing through the scintillator layer enables analysis of the plasma.

公开(公告)号：US12040326B2

公开(公告)日：2024-07-16

申请号：US18212304

申请日：2023-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junggil Yang ,  Minju Kim ,  Donghyi Koh

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L29/0673 ,  H01L29/7851

Abstract: An integrated circuit device including a substrate including first and second device regions; a first fin active region on the first device region; a second fin active region on the second device region; an isolation film covering side walls of the active regions; gate cut insulating patterns on the isolation film on the device regions; a gate line extending on the fin active regions, the gate line having a length limited by the gate cut insulating patterns; and an inter-region insulating pattern on the isolation film between the fin active regions and at least partially penetrating the gate line in a vertical direction, wherein the inter-region insulating pattern has a bottom surface proximate to the substrate, a top surface distal to the substrate, and a side wall linearly extending from the bottom to the top surface.

公开(公告)号：US11287323B2

公开(公告)日：2022-03-29

申请号：US17003197

申请日：2020-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoonseop Kim ,  Vladmir Protopopov ,  Minju Kim

IPC: G01J3/45 ,  H01L21/66 ,  G01N21/84 ,  G01N21/95 ,  G01N21/45

Abstract: A semiconductor substrate processing apparatus includes a transfer chamber disposed between process chambers performing processing of a semiconductor substrate, a transfer robot disposed inside the transfer chamber to load the semiconductor substrate into the process chamber and unload the semiconductor substrate whose processing has been performed in the process chamber, an optical assembly irradiates irradiation light having multiple wavelengths onto the semiconductor substrate, the optical assembly splitting measurement light reflected from a surface of the semiconductor substrate into first and second measurement light and collecting interference light caused by first reflected light and second reflected light, a light detector detecting the interference light and converting the interference light into an electric signal to produce an interference signal, and a controller extracting spectrum information for each wavelength of the measurement light from the interference signal and calculating distribution information of a film formed on the semiconductor substrate.