公开(公告)号：US20240152062A1

公开(公告)日：2024-05-09

申请号：US18354207

申请日：2023-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sukjong Bae ,  Kangho Park ,  Moongu Shin ,  Myoungsoo Lee ,  Hojune Lee

IPC: G03F7/00 ,  G03F7/20

CPC classification number: G03F7/70716 ,  G03F7/2004 ,  G03F7/70075 ,  G03F7/70758 ,  G03F7/70825 ,  G03F7/7085

Abstract: A mask exposure system includes a chamber, a stage configured to receive a mask, one or more mask temperature sensors, a beam source configured to irradiate an electron beam on the mask, a deflector configured to adjust a position at which the electron beam is irradiated on the mask by deflecting the electron beam based on a voltage level applied to the deflector, in the chamber, a chamber temperature sensor configured to measure an internal temperature of the chamber, and a controller configured to control a direction of deflection and a degree of deflection of the electron beam the deflector. The controller is configured to correct the voltage level applied to the deflector based on a difference between the temperature of the mask and the chamber.

公开(公告)号：US10056229B2

公开(公告)日：2018-08-21

申请号：US15442754

申请日：2017-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sukjong Bae ,  Myoungsoo Lee ,  Inkyun Shin

IPC: H01J37/20 ,  H01J37/317 ,  B29C67/00 ,  G03F7/20 ,  G03F7/00

CPC classification number: H01J37/3174 ,  B29C64/00 ,  G03F1/78 ,  G03F7/0035 ,  G03F7/70991 ,  G03F2007/2067 ,  H01J2237/004 ,  H01J2237/0245 ,  H01J2237/31755 ,  H01J2237/31788

Abstract: A charged-particle beam exposure method includes providing a sample that has patterns having shot densities different from each other, using the sample to obtain pattern drift values correlated with the shot densities, and irradiating the sample with a charged-particle beam to perform an exposure process on the sample. The irradiating of the sample with the charged-particle beam is carried out while a deflection voltage, which is applied to the charged-particle beam to deflect the charged-particle beam, is corrected based on the pattern drift value corresponding to a shot density of a pattern to be formed on the sample.