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公开(公告)号：US20230042743A1
公开(公告)日：2023-02-09
申请号：US17679749
申请日：2022-02-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sukjong Bae , Johan Hofkens , Haifeng Yuan , Flip de Jong
Abstract: According to example embodiments, there is provided a photoresist inspection method. The photoresist inspection method includes: providing a photoresist on a substrate; irradiating the photoresist with an electron beam and an excitation beam; detecting fluorescent light generated by the photoresist in response to the excitation beam; and evaluating the photoresist based on the fluorescent light.
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公开(公告)号：US20240152062A1
公开(公告)日：2024-05-09
申请号：US18354207
申请日：2023-07-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sukjong Bae , Kangho Park , Moongu Shin , Myoungsoo Lee , Hojune Lee
CPC classification number: G03F7/70716 , G03F7/2004 , G03F7/70075 , G03F7/70758 , G03F7/70825 , G03F7/7085
Abstract: A mask exposure system includes a chamber, a stage configured to receive a mask, one or more mask temperature sensors, a beam source configured to irradiate an electron beam on the mask, a deflector configured to adjust a position at which the electron beam is irradiated on the mask by deflecting the electron beam based on a voltage level applied to the deflector, in the chamber, a chamber temperature sensor configured to measure an internal temperature of the chamber, and a controller configured to control a direction of deflection and a degree of deflection of the electron beam the deflector. The controller is configured to correct the voltage level applied to the deflector based on a difference between the temperature of the mask and the chamber.
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公开(公告)号：US10056229B2
公开(公告)日：2018-08-21
申请号：US15442754
申请日：2017-02-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sukjong Bae , Myoungsoo Lee , Inkyun Shin
IPC: H01J37/20 , H01J37/317 , B29C67/00 , G03F7/20 , G03F7/00
CPC classification number: H01J37/3174 , B29C64/00 , G03F1/78 , G03F7/0035 , G03F7/70991 , G03F2007/2067 , H01J2237/004 , H01J2237/0245 , H01J2237/31755 , H01J2237/31788
Abstract: A charged-particle beam exposure method includes providing a sample that has patterns having shot densities different from each other, using the sample to obtain pattern drift values correlated with the shot densities, and irradiating the sample with a charged-particle beam to perform an exposure process on the sample. The irradiating of the sample with the charged-particle beam is carried out while a deflection voltage, which is applied to the charged-particle beam to deflect the charged-particle beam, is corrected based on the pattern drift value corresponding to a shot density of a pattern to be formed on the sample.
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Patent Agency Ranking
4.发明授权Methods of reducing registration errors of photomasks and photomasks formed using the methods 有权减少使用该方法形成的光掩模和光掩模的配准误差的方法公开(公告)号：US09323142B2
公开(公告)日：2016-04-26
申请号：US14319281
申请日：2014-06-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Choi , Sukjong Bae , Inkyun Shin , Jeonghyeon Lee
Abstract: Methods of reducing registration errors of photomasks and photomasks formed using the methods are provided. The method may include forming a plurality of photomask patterns on a substrate and determining registration errors of the plurality of photomask patterns. The method may further include forming a plurality of stress-producing portions in the substrate to reduce the registration errors by considering exposure latitude variations.
Abstract translation: 提供了减少使用这些方法形成的光掩模和光掩模的配准误差的方法。 该方法可以包括在衬底上形成多个光掩模图案并确定多个光掩模图案的配准误差。 该方法还可以包括在衬底中形成多个应力产生部分，以通过考虑曝光宽容度变化来减小配准误差。
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公开(公告)号：US12276907B2
公开(公告)日：2025-04-15
申请号：US17679749
申请日：2022-02-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sukjong Bae , Johan Hofkens , Haifeng Yuan , Flip de Jong
Abstract: According to example embodiments, there is provided a photoresist inspection method. The photoresist inspection method includes: providing a photoresist on a substrate; irradiating the photoresist with an electron beam and an excitation beam; detecting fluorescent light generated by the photoresist in response to the excitation beam; and evaluating the photoresist based on the fluorescent light.
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6.发明授权Electron beam exposure system and methods of performing exposing and patterning processes using the same 有权电子束曝光系统及使用其进行曝光和图案化处理的方法公开(公告)号：US09588415B2
公开(公告)日：2017-03-07
申请号：US14590145
申请日：2015-01-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sukjong Bae , Jin Choi , Sunghoon Park
CPC classification number: G03F1/56 , G03F1/70 , G03F7/2063 , H01J37/3045 , H01J37/3174 , H01J2237/31766 , H01J2237/31776
Abstract: An exposure system includes a data processing part that forms an exposure layout and an exposure part that irradiates an electron beam at a photoresist layer according to the exposure layout. The data processing part generates a control parameter for driving the exposure part without a pattern position error and a beam drift error and to prevent a discrepancy between the exposure layout and a mask layout to be formed in the photoresist layer. A controlling part controls the exposure part according to the control parameter.
Abstract translation: 曝光系统包括形成曝光布局的数据处理部分和根据曝光布局在光致抗蚀剂层处照射电子束的曝光部分。 数据处理部分产生用于驱动曝光部分的控制参数，而没有图案位置误差和光束偏移误差，并且防止在光致抗蚀剂层中形成曝光布局和掩模布局之间的差异。 控制部根据控制参数控制曝光部。
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7.发明申请公开(公告)号：US20150355547A1
公开(公告)日：2015-12-10
申请号：US14590145
申请日：2015-01-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sukjong Bae , Jin Choi , Sunghoon Park
IPC: G03F7/20
CPC classification number: G03F1/56 , G03F1/70 , G03F7/2063 , H01J37/3045 , H01J37/3174 , H01J2237/31766 , H01J2237/31776
Abstract: Provided are an exposure system and methods of performing exposing and patterning processes using the same. The exposure system may include a data processing part that forms an exposure layout; and an exposure part that irradiates an electron beam at a photoresist layer according to the exposure layout. The data processing part is constructed and arranged to generate a control parameter for driving the exposure part without a pattern position error and a beam drift error and to prevent a discrepancy between the exposure layout and a mask layout to be formed in the photoresist layer. The exposure system further includes a controlling part that controls the exposure part according to the control parameter.
Abstract translation: 提供一种曝光系统和使用其的曝光和图案化处理的方法。 曝光系统可以包括形成曝光布局的数据处理部分; 以及根据曝光布局在光致抗蚀剂层照射电子束的曝光部。 数据处理部分被构造和布置成产生用于驱动曝光部分的控制参数，而没有图案位置误差和光束偏移误差，并且防止在光致抗蚀剂层中形成曝光布局和掩模布局之间的差异。 曝光系统还包括根据控制参数控制曝光部分的控制部分。
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8.发明申请Methods of Reducing Registration Errors of Photomasks and Photomasks Formed Using the Methods 有权使用方法减少光掩模和光掩模的注册错误的方法公开(公告)号：US20150050584A1
公开(公告)日：2015-02-19
申请号：US14319281
申请日：2014-06-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Choi , Sukjong Bae , Inkyun Shin , Jeonghyeon Lee
Abstract: Methods of reducing registration errors of photomasks and photomasks formed using the methods are provided. The method may include forming a plurality of photomask patterns on a substrate and determining registration errors of the plurality of photomask patterns. The method may further include forming a plurality of stress-producing portions in the substrate to reduce the registration errors by considering exposure latitude variations.
Abstract translation: 提供了减少使用这些方法形成的光掩模和光掩模的配准误差的方法。 该方法可以包括在衬底上形成多个光掩模图案并确定多个光掩模图案的配准误差。 该方法还可以包括在衬底中形成多个应力产生部分，以通过考虑曝光宽容度变化来减小配准误差。
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