公开(公告)号：US11372323B2

公开(公告)日：2022-06-28

申请号：US16814580

申请日：2020-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanseok Seo ,  SeongSue Kim ,  Taehoon Lee ,  Roman Chalykh

IPC: G03F1/22 ,  G03F1/26 ,  G03F1/52 ,  G03F1/24 ,  G03F1/34

Abstract: A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.

公开(公告)号：US10274820B2

公开(公告)日：2019-04-30

申请号：US15919653

申请日：2018-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanchul Jeon ,  Munja Kim ,  Sungwon Kwon ,  Byunggook Kim ,  Roman Chalykh ,  Yongseok Jung ,  Jaehyuck Choi

IPC: G03F1/62 ,  G03F1/64

Abstract: A pellicle for lithography processes, including extreme ultraviolet (EUV) lithography may mitigate thermal accumulation in a membrane of the pellicle. The pellicle includes a membrane and at least one thermal buffer layer on at least one surface of the membrane. An emissivity of the thermal buffer layer may be greater than an emissivity of the membrane. A carbon content of the thermal buffer layer may be greater than a carbon content of the membrane. Multiple thermal buffer layers may be on separate surfaces of the membrane, and the thermal buffer layers may have different properties. A capping layer may be on at least one thermal buffer layer, and the capping layer may include a hydrogen resistant material. A thermal buffer layer may extend over some or all of a surface of the membrane. A thermal buffer layer may be between at least two membranes.

公开(公告)号：US10719008B2

公开(公告)日：2020-07-21

申请号：US15625049

申请日：2017-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanseok Seo ,  SeongSue Kim ,  Taehoon Lee ,  Roman Chalykh

IPC: G03F1/22 ,  G03F1/24 ,  G03F1/26 ,  G03F1/52

Abstract: A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.

公开(公告)号：US20200209732A1

公开(公告)日：2020-07-02

申请号：US16814580

申请日：2020-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanseok SEO ,  SeongSue Kim ,  Taehoon Lee ,  Roman Chalykh

IPC: G03F1/26 ,  G03F1/22 ,  G03F1/52 ,  G03F1/24

Abstract: A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.