公开(公告)号：US10274820B2

公开(公告)日：2019-04-30

申请号：US15919653

申请日：2018-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanchul Jeon ,  Munja Kim ,  Sungwon Kwon ,  Byunggook Kim ,  Roman Chalykh ,  Yongseok Jung ,  Jaehyuck Choi

IPC: G03F1/62 ,  G03F1/64

Abstract: A pellicle for lithography processes, including extreme ultraviolet (EUV) lithography may mitigate thermal accumulation in a membrane of the pellicle. The pellicle includes a membrane and at least one thermal buffer layer on at least one surface of the membrane. An emissivity of the thermal buffer layer may be greater than an emissivity of the membrane. A carbon content of the thermal buffer layer may be greater than a carbon content of the membrane. Multiple thermal buffer layers may be on separate surfaces of the membrane, and the thermal buffer layers may have different properties. A capping layer may be on at least one thermal buffer layer, and the capping layer may include a hydrogen resistant material. A thermal buffer layer may extend over some or all of a surface of the membrane. A thermal buffer layer may be between at least two membranes.

公开(公告)号：US20180067390A1

公开(公告)日：2018-03-08

申请号：US15602302

申请日：2017-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungwon Kwon ,  Yongkyu Kim ,  Jinsu Kim

IPC: G03F1/38 ,  G03F1/52 ,  G03F1/60 ,  G03F1/54 ,  G03F1/24

CPC classification number: G03F1/38 ,  G03F1/24 ,  G03F1/52 ,  G03F1/54 ,  G03F1/60

Abstract: Disclosed is a photomask. The photomask comprises a substrate, a reflective layer on the substrate, and an absorption structure on the reflective layer. The absorption structure comprises absorption patterns spaced apart from each other on the reflective layer. The absorption structure may include dummy holes in at least one of the absorption patterns. The dummy holes exhaust hydrogen from the absorption structure. The photomask may include a barrier layer on the absorption structure. The barrier layer may reduce the amount of hydrogen entering the absorption structure.