公开(公告)号：US20240047339A1

公开(公告)日：2024-02-08

申请号：US18106540

申请日：2023-02-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNGMIN CHA ,  SEUNGMIN SONG ,  YOUNGWOO KIM ,  JINKYU KIM ,  SORA YOU ,  NAMHYUN LEE ,  SUNGMOON LEE

IPC: H01L23/50 ,  H01L29/66 ,  H01L29/78 ,  H01L27/088 ,  H01L27/092 ,  H01L29/423 ,  H01L23/535 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L23/50 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/66545 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/4236 ,  H01L23/535 ,  H01L23/5226 ,  H01L23/5286

Abstract: An integrated circuit device includes a substrate, having a front surface and a rear surface opposite to each other, and a fin-type active region defined by a trench in the front surface, a device separation layer filling the trench, a source/drain region on the fin-type active region, a first conductive plug arranged on the source/drain region and electrically connected to the source/drain region, a power wiring line at least partially arranged on a lower surface of the substrate, a buried rail connected to the power wiring line through the device separation layer and decreasing in horizontal width toward the power wiring line, and a power via connecting the buried rail to the first conductive plug.

公开(公告)号：US20220310809A1

公开(公告)日：2022-09-29

申请号：US17841873

申请日：2022-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doohyun Lee ,  HYUN-SEUNG SONG ,  YEONGCHANG ROH ,  HEONJONG SHIN ,  SORA YOU ,  YONGSIK JEONG

IPC: H01L29/417 ,  H01L29/49 ,  H01L23/535 ,  H01L29/08 ,  H01L29/423 ,  H01L23/532

Abstract: A semiconductor device comprising a gate electrode on a substrate, a source/drain pattern on the substrate on a side of the gate electrode, and a gate contact plug on the gate electrode are disclosed. The gate contact plug may include a first gate contact segment, and a second gate contact segment that extends in a vertical direction from a top surface of the first gate contact segment. An upper width of the first gate contact segment may be greater than a lower width of the second gate contact segment.