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公开(公告)号:US20190189906A1
公开(公告)日:2019-06-20
申请号:US16028688
申请日:2018-07-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sung Chul LEE , Se Chung OH , Sangjun YUN , Jae Hoon KIM , KyungTae NAM , Eunsun NOH
CPC classification number: H01L43/02 , G11C11/161 , H01L27/222 , H01L43/10 , H01L43/12
Abstract: A magnetic memory device includes a substrate, a tunnel barrier pattern on the substrate, a first magnetic pattern and a second magnetic pattern spaced apart from each other with the tunnel barrier pattern therebetween, and a short preventing pattern spaced apart from the tunnel barrier pattern with the second magnetic pattern therebetween. The short preventing pattern includes at least two oxide layers and at least two metal layers, which are alternately stacked.