公开(公告)号：US20190189906A1

公开(公告)日：2019-06-20

申请号：US16028688

申请日：2018-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Chul LEE ,  Se Chung OH ,  Sangjun YUN ,  Jae Hoon KIM ,  KyungTae NAM ,  Eunsun NOH

IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/222 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic memory device includes a substrate, a tunnel barrier pattern on the substrate, a first magnetic pattern and a second magnetic pattern spaced apart from each other with the tunnel barrier pattern therebetween, and a short preventing pattern spaced apart from the tunnel barrier pattern with the second magnetic pattern therebetween. The short preventing pattern includes at least two oxide layers and at least two metal layers, which are alternately stacked.

公开(公告)号：US20180309052A1

公开(公告)日：2018-10-25

申请号：US16018700

申请日：2018-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shinhee HAN ,  Kiseok SUH ,  KyungTae NAM ,  Woojin KIM ,  Kwangil SHIN ,  Minkyoung JOO ,  Gwanhyeob KOH

IPC: H01L43/12 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/12 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/226 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A method of fabricating a magnetic memory device includes forming an interlayered insulating layer on a substrate, forming a landing pad to pass through the interlayered insulating layer, forming a protection insulating layer on the interlayered insulating layer to cover a top surface of the landing pad, forming a bottom electrode to pass through the protection insulating layer and through the interlayered insulating layer, forming a magnetic tunnel junction layer on the protection insulating layer; and patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern on the bottom electrode.