公开(公告)号：US20220293753A1

公开(公告)日：2022-09-15

申请号：US17491965

申请日：2021-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seon-Bae KIM ,  Kyungin CHOI

IPC: H01L29/423 ,  H01L29/417 ,  H01L27/088

Abstract: A semiconductor device is disclosed. The semiconductor device may include a semiconductor substrate including a protruding active pattern, a first gate pattern provided on the active pattern and extended to cross the active pattern, a first capping pattern provided on a top surface of the first gate pattern, the first capping pattern having a top surface, a side surface, and a rounded edge, and a first insulating pattern covering the side surface and the edge of the first capping pattern. A thickness of the first insulating pattern on the edge of the first capping pattern is different from a thickness of the first insulating pattern on outer side surfaces of the spacer patterns.

公开(公告)号：US20230115743A1

公开(公告)日：2023-04-13

申请号：US17834987

申请日：2022-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Hyunho PARK ,  Minchan GWAK ,  Seon-Bae KIM ,  Jinyoung PARK

IPC: H01L29/786 ,  H01L29/423

Abstract: A semiconductor device may include first and second active regions on a substrate, first and second active patterns on the first and second active regions, first and second source/drain patterns on the first and second active patterns, first and second silicide patterns on the first and second source/drain patterns, and first and second active contacts coupled to the first and second source/drain patterns. A lowermost portion of the first active contact is at a level higher than that of a lowermost portion of the second active contact. A thickness of the first silicide pattern is greater than that of the second silicide pattern.

公开(公告)号：US20240258396A1

公开(公告)日：2024-08-01

申请号：US18458438

申请日：2023-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Ki PARK ,  Seon-Bae KIM ,  Sung Hwan KIM ,  Wan Don KIM ,  Jin Young PARK

IPC: H01L29/45 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/456 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device may include gate structures spaced apart from each other on an active pattern, where each of the gate structures includes gate spacers on sidewalls of a gate electrode, source/drain patterns between the gate structures, source/drain contacts on the source/drain patterns, and contact silicide films between the source/drain contacts and the source/drain patterns. Outer surfaces of the contact silicide films may contact the source/drain patterns and inner surfaces of the contact silicide films may contact the source/drain contacts. A width in a first direction of the contact silicide films may be maximum at the uppermost portions of outer surfaces of the contact silicide films. Parts of the outer surfaces of the contact silicide films may contact the gate spacers. The width in the first direction of the uppermost portions of the contact silicide films may be equal to a width in the first direction of the source/drain contacts.

公开(公告)号：US20220384591A1

公开(公告)日：2022-12-01

申请号：US17546213

申请日：2021-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Seon-Bae KIM ,  Minchan GWAK ,  Jinyoung PARK ,  Hyunho PARK

IPC: H01L29/417 ,  H01L27/092 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device may include an active pattern on a substrate, a source/drain pattern on the active pattern, a channel pattern connected to the source/drain pattern, a gate electrode on the channel pattern, an active contact on the source/drain pattern, a first lower interconnection line on the gate electrode, and a second lower interconnection line on the active contact and at the same level as the first lower interconnection line. The gate electrode may include an electrode body portion and an electrode protruding portion, wherein the electrode protruding portion protrudes from a top surface of the electrode body portion and is in contact with the first lower interconnection line thereon. The active contact may include a contact body portion and a contact protruding portion, wherein the contact protruding portion protrudes from a top surface of the contact body portion and is in contact with the second lower interconnection line thereon.