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    SEMICONDUCTOR DEVICE
    6.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240258396A1

    公开(公告)日：2024-08-01

    申请号：US18458438

    申请日：2023-08-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jun Ki PARK ,  Seon-Bae KIM ,  Sung Hwan KIM ,  Wan Don KIM ,  Jin Young PARK

    IPC: H01L29/45 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

    CPC classification number: H01L29/456 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

    Abstract: A semiconductor device may include gate structures spaced apart from each other on an active pattern, where each of the gate structures includes gate spacers on sidewalls of a gate electrode, source/drain patterns between the gate structures, source/drain contacts on the source/drain patterns, and contact silicide films between the source/drain contacts and the source/drain patterns. Outer surfaces of the contact silicide films may contact the source/drain patterns and inner surfaces of the contact silicide films may contact the source/drain contacts. A width in a first direction of the contact silicide films may be maximum at the uppermost portions of outer surfaces of the contact silicide films. Parts of the outer surfaces of the contact silicide films may contact the gate spacers. The width in the first direction of the uppermost portions of the contact silicide films may be equal to a width in the first direction of the source/drain contacts.

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