公开(公告)号：US20160215085A1

公开(公告)日：2016-07-28

申请号：US14981194

申请日：2015-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junwon HAN ,  Su-Jin KWON ,  Seungwon KIM ,  Hyunwoo KIM ,  Jungsik CHOI

IPC: C08F293/00 ,  C08L53/00

CPC classification number: C08F6/12 ,  C08L53/00

Abstract: The inventive concepts provide methods of purifying a block copolymer and methods of forming a pattern using the same. The purifying method is performed using a first adsorbent. The first adsorbent has adsorbability with respect to a first polymer block having a molecular weight equal to or greater than a first average molecular weight. The purifying method further includes purifying a synthesized polymer using a second adsorbent. The second adsorbent interacts with a second polymer block.

Abstract translation: 本发明的概念提供了纯化嵌段共聚物的方法和使用其形成图案的方法。 纯化方法使用第一吸附剂进行。 第一吸附剂相对于分子量等于或大于第一平均分子量的第一聚合物嵌段具有吸附性。 纯化方法还包括使用第二吸附剂纯化合成的聚合物。 第二吸附剂与第二聚合物嵌段相互作用。

公开(公告)号：US20240315060A1

公开(公告)日：2024-09-19

申请号：US18593261

申请日：2024-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byeongeun KWAK ,  Joon Hak OH ,  Kiryong LEE ,  Sang Hyuk LEE ,  Moon-Ki JEONG ,  Seungwon KIM ,  Songse YI ,  Yeseul LEE ,  Joowon LEE

IPC: H10K30/20 ,  H10K30/85 ,  H10K30/86 ,  H10K30/87 ,  H10K39/32 ,  H10K39/38 ,  H10K85/10 ,  H10K85/20 ,  H10K85/30 ,  H10K85/60 ,  H10K101/30 ,  H10K101/40

CPC classification number: H10K30/20 ,  H10K30/85 ,  H10K30/86 ,  H10K30/87 ,  H10K39/32 ,  H10K39/38 ,  H10K85/113 ,  H10K85/215 ,  H10K85/331 ,  H10K85/381 ,  H10K85/655 ,  H10K85/6572 ,  H10K85/6576 ,  H10K2101/30 ,  H10K2101/40

Abstract: A photoelectric conversion device according to some example embodiments includes an upper electrode, a lower electrode, and an active layer including a donor material, an acceptor material, and a light-absorbing material and disposed between the upper electrode and the lower electrode, wherein the donor material includes a compound represented by Formula 1, and the light-absorbing material includes bis-(4-dimethylaminodithiobenzyl)-Ni(II) (BDN).

公开(公告)号：US20180108644A1

公开(公告)日：2018-04-19

申请号：US15627536

申请日：2017-06-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungwon KIM ,  Su-Jin KWON ,  Junwon HAN ,  Hyunwoo KIM ,  Byung Lyul PARK

IPC: H01L25/00 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L25/50 ,  H01L21/4857 ,  H01L21/56

Abstract: A method of manufacturing a semiconductor package, the method including forming a hole that penetrates an interconnect substrate; providing a first carrier substrate below the interconnect substrate; providing a semiconductor chip in the hole; forming a molding layer by coating a molding composition on the semiconductor chip and the interconnect substrate; adhering a second carrier substrate onto the molding layer with an adhesive layer; removing the first carrier substrate to expose a bottom surface of the semiconductor chip and a bottom surface of the interconnect substrate; forming a redistribution substrate below the semiconductor chip and the interconnect substrate; detaching the second carrier substrate from the adhesive layer; and removing the adhesive layer.