公开(公告)号：US20160215085A1

公开(公告)日：2016-07-28

申请号：US14981194

申请日：2015-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junwon HAN ,  Su-Jin KWON ,  Seungwon KIM ,  Hyunwoo KIM ,  Jungsik CHOI

IPC: C08F293/00 ,  C08L53/00

CPC classification number: C08F6/12 ,  C08L53/00

Abstract: The inventive concepts provide methods of purifying a block copolymer and methods of forming a pattern using the same. The purifying method is performed using a first adsorbent. The first adsorbent has adsorbability with respect to a first polymer block having a molecular weight equal to or greater than a first average molecular weight. The purifying method further includes purifying a synthesized polymer using a second adsorbent. The second adsorbent interacts with a second polymer block.

Abstract translation: 本发明的概念提供了纯化嵌段共聚物的方法和使用其形成图案的方法。 纯化方法使用第一吸附剂进行。 第一吸附剂相对于分子量等于或大于第一平均分子量的第一聚合物嵌段具有吸附性。 纯化方法还包括使用第二吸附剂纯化合成的聚合物。 第二吸附剂与第二聚合物嵌段相互作用。

公开(公告)号：US20180108644A1

公开(公告)日：2018-04-19

申请号：US15627536

申请日：2017-06-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungwon KIM ,  Su-Jin KWON ,  Junwon HAN ,  Hyunwoo KIM ,  Byung Lyul PARK

IPC: H01L25/00 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L25/50 ,  H01L21/4857 ,  H01L21/56

Abstract: A method of manufacturing a semiconductor package, the method including forming a hole that penetrates an interconnect substrate; providing a first carrier substrate below the interconnect substrate; providing a semiconductor chip in the hole; forming a molding layer by coating a molding composition on the semiconductor chip and the interconnect substrate; adhering a second carrier substrate onto the molding layer with an adhesive layer; removing the first carrier substrate to expose a bottom surface of the semiconductor chip and a bottom surface of the interconnect substrate; forming a redistribution substrate below the semiconductor chip and the interconnect substrate; detaching the second carrier substrate from the adhesive layer; and removing the adhesive layer.

公开(公告)号：US20150162195A1

公开(公告)日：2015-06-11

申请号：US14511191

申请日：2014-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Won HAN ,  Su-Jin KWON ,  Hye-Ryun KIM ,  Jae-Hyun KIM ,  Jung-Sik CHOI

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  C08L53/00

CPC classification number: H01L21/0337 ,  C08F297/026 ,  C08L53/00 ,  G03F7/0002 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/76816

Abstract: In a method of manufacturing a semiconductor device, a blend solution that includes a block copolymer and an adsorbent is prepared. The block copolymer is synthesized by a copolymerization between a first polymer unit and a second polymer unit having a hydrophilicity greater than that of the first polymer unit. The adsorbent on which the block copolymer is adsorbed is extracted. The block copolymer is separated from the adsorbent. The block copolymer is collected. The block copolymer may be used to form a mask on an object layer on a substrate and the mask used to etch the object layer.

Abstract translation: 在制造半导体器件的方法中，制备包括嵌段共聚物和吸附剂的共混溶液。 嵌段共聚物通过第一聚合物单元和亲水性大于第一聚合物单元的第二聚合物单元之间的共聚合成。 萃取其上吸附嵌段共聚物的吸附剂。 从吸附剂中分离出嵌段共聚物。 收集嵌段共聚物。 嵌段共聚物可以用于在基材上的物体层上形成掩模，并且掩模用于蚀刻物体层。