-
公开(公告)号:US20210223692A1
公开(公告)日:2021-07-22
申请号:US16994957
申请日:2020-08-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunji SONG , Sukkoo HONG , Sumin KIM , Yechan KIM , Juyoung KIM , Jinjoo KIM , Hyunwoo KIM , Juhyeon PARK , Songse YI
IPC: G03F7/004 , G03F7/039 , C07D277/26 , C07D263/32 , C07D233/64 , C07D213/68
Abstract: A photo-decomposable compound, a photoresist composition, and a method of manufacturing an IC device, the compound generating acid upon exposure and acts as a quenching base that neutralizes acid in an unexposed state and being represented by Formula 1: wherein, in Formula 1, Ra is a C5 to C40 substituted or unsubstituted cyclic hydrocarbon group including at least one nitrogen atom, Ya is a C1 to C20 divalent linear or cyclic hydrocarbon group, n is an integer of 1 to 5, and A+ is a counter ion.
-
公开(公告)号:US20240315060A1
公开(公告)日:2024-09-19
申请号:US18593261
申请日:2024-03-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Byeongeun KWAK , Joon Hak OH , Kiryong LEE , Sang Hyuk LEE , Moon-Ki JEONG , Seungwon KIM , Songse YI , Yeseul LEE , Joowon LEE
IPC: H10K30/20 , H10K30/85 , H10K30/86 , H10K30/87 , H10K39/32 , H10K39/38 , H10K85/10 , H10K85/20 , H10K85/30 , H10K85/60 , H10K101/30 , H10K101/40
CPC classification number: H10K30/20 , H10K30/85 , H10K30/86 , H10K30/87 , H10K39/32 , H10K39/38 , H10K85/113 , H10K85/215 , H10K85/331 , H10K85/381 , H10K85/655 , H10K85/6572 , H10K85/6576 , H10K2101/30 , H10K2101/40
Abstract: A photoelectric conversion device according to some example embodiments includes an upper electrode, a lower electrode, and an active layer including a donor material, an acceptor material, and a light-absorbing material and disposed between the upper electrode and the lower electrode, wherein the donor material includes a compound represented by Formula 1, and the light-absorbing material includes bis-(4-dimethylaminodithiobenzyl)-Ni(II) (BDN).
-
3.
公开(公告)号:US20240337928A1
公开(公告)日:2024-10-10
申请号:US18613810
申请日:2024-03-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hana KIM , Haengdeog KOH , Hyeran KIM , Youngmin NAM , Giyoung SONG , Changheon LEE , Aram JEON , Jungha CHAE , Songse YI , Sukkoo HONG
IPC: G03F7/004
CPC classification number: G03F7/0045
Abstract: Provided are an organic salt represented by Formula 1 below, a photoresist composition including the same, and a method of forming a pattern by using the photoresist composition.
A description of Formula 1 is provided herein.-
公开(公告)号:US20210255544A1
公开(公告)日:2021-08-19
申请号:US17003414
申请日:2020-08-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yechan KIM , Suk Koo HONG , Su Min KIM , Ju-Young KIM , Jinjoo KIM , Hyunwoo KIM , Juhyeon PARK , Hyunji SONG , Songse YI
Abstract: A resist composition including a polymer; a photoacid generator; and a material represented by Formula 1:
-
公开(公告)号:US20210263411A1
公开(公告)日:2021-08-26
申请号:US16991281
申请日:2020-08-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yechan KIM , Su Min KIM , Ju-Young KIM , Jinjoo KIM , Hyunwoo KIM , Juhyeon PARK , Hyunji SONG , Songse YI , Suk Koo HONG
IPC: G03F7/004 , C08L25/06 , C07C381/12 , C08L35/00
Abstract: A resist composition including a polymer; and a compound represented by Formula 1, in Formula 1, R1 is hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, a carbonyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, an ether group having 1 to 7 carbon atoms, or a group represented by Formula R, and R2, R3, R4 and R5 are hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, or an ether group having 1 to 7 carbon atoms,
-
公开(公告)号:US20210240079A1
公开(公告)日:2021-08-05
申请号:US17003373
申请日:2020-08-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Juhyeon PARK , Su Min KIM , Yechan KIM , Ju-Young KIM , Jinjoo KIM , Hyunwoo KIM , Hyunji SONG , Songse YI , Suk Koo HONG
IPC: G03F7/038 , G03F7/004 , G03F7/38 , H01L21/027 , H01L21/3213 , G03F7/20
Abstract: A photolithography method and a method of manufacturing a semiconductor device, the photolithography method including applying a composition on a substrate to form a photoresist layer; performing an exposing process using extreme ultraviolet radiation (EUV) on the photoresist layer; and developing the photoresist layer to form photoresist patterns, wherein the composition includes a photosensitive resin, a photo-acid generator, a photo decomposable quencher, an additive, and a solvent, and the additive is a compound represented by the following Formula 4A: in Formula 4A, R1 to R5 are each independently hydrogen or iodine, at least one of R1 to R5 being iodine.
-
公开(公告)号:US20230120542A1
公开(公告)日:2023-04-20
申请号:US18080348
申请日:2022-12-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sumin KIM , Hyunwoo KIM , Sukkoo HONG , Yechan KIM , Juyoung KIM , Jinjoo KIM , Juhyeon PARK , Hyunji SONG , Songse YI
IPC: G03F7/004 , C07C381/12 , G03F7/039 , C07C309/12
Abstract: A photo-decomposable compound includes an anion component including an adamantyl group and a cation component including a C5 to C40 cyclic hydrocarbon group and forming a complex with the anion component. At least one of the adamantyl group and the cyclic hydrocarbon group has a substituent, which decomposes by acid and generates an alkali soluble group. The substituent includes an acid-labile protecting group. A photoresist composition includes a chemically amplified polymer, the photo-decomposable compound, and a solvent. To manufacture an integrated circuit (IC) device, a photoresist film is formed using the photoresist composition on a feature layer, a first area of the photoresist film is exposed to generate a plurality of acids from the photo-decomposable compound in the first area, the chemically amplified polymer is deprotected due to the plurality of acids, and the first area is removed to form a photoresist pattern.
-
公开(公告)号:US20210240078A1
公开(公告)日:2021-08-05
申请号:US17005636
申请日:2020-08-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sumin KIM , Hyunwoo KIM , Sukkoo HONG , Yechan KIM , Juyoung KIM , Jinjoo KIM , Juhyeon PARK , Hyunji SONG , Songse YI
IPC: G03F7/004 , C07C381/12 , C07C309/12 , G03F7/039
Abstract: A photo-decomposable compound includes an anion component including an adamantyl group and a cation component including a C5 to C40 cyclic hydrocarbon group and forming a complex with the anion component. At least one of the adamantyl group and the cyclic hydrocarbon group has a substituent, which decomposes by acid and generates an alkali soluble group. The substituent includes an acid-labile protecting group. A photoresist composition includes a chemically amplified polymer, the photo-decomposable compound, and a solvent. To manufacture an integrated circuit (IC) device, a photoresist film is formed using the photoresist composition on a feature layer, a first area of the photoresist film is exposed to generate a plurality of acids from the photo-decomposable compound in the first area, the chemically amplified polymer is deprotected due to the plurality of acids, and the first area is removed to form a photoresist pattern.
-
-
-
-
-
-
-