公开(公告)号：US10186615B2

公开(公告)日：2019-01-22

申请号：US15889803

申请日：2018-02-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Soo Kim ,  Gi-Gwan Park ,  Song-E Kim ,  Koung-Min Ryu ,  Sun-Ki Min

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/417

Abstract: A semiconductor device is provided which includes a first fin-type pattern including a first side surface and a second side surface opposite to each other, a first trench of a first depth adjacent to the first side surface, a second trench of a second depth adjacent to the second side surface. The second depth differs from the first depth, and a first field insulating film partially fills the first trench and a second field insulating film partially fills the second trench. The first fin-type pattern has a lower portion, and an upper portion having a narrower width than the lower portion, and has a first stepped portion on a boundary between the upper portion and the lower portion. The first field insulating film includes a first lower field insulating film in contact with the lower portion, and a first upper field insulating film in contact with the upper portion.

公开(公告)号：US10109738B2

公开(公告)日：2018-10-23

申请号：US15812527

申请日：2017-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-soo Kim ,  Song-E Kim ,  Koung-Min Ryu ,  Sun-Ki Min

IPC: H01L29/66 ,  H01L21/00 ,  H01L29/78 ,  H01L27/12

Abstract: A semiconductor device is provided that includes a deep trench defining an active region, and a fin-type pattern protruding within the active region. The fin-type pattern having a lower portion, an upper portion of a narrower width than the lower portion, and a first stepped portion formed at a boundary between the upper portion and the lower portion. The device also includes a first field insulating film surrounding the lower portion and a second field insulating film formed on the first field insulating film and partially surrounding the upper portion.

公开(公告)号：US09847421B2

公开(公告)日：2017-12-19

申请号：US15189960

申请日：2016-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-soo Kim ,  Song-E Kim ,  Koung-Min Ryu ,  Sun-Ki Min

IPC: H01L29/66 ,  H01L21/00 ,  H01L29/78 ,  H01L27/12

CPC classification number: H01L29/785 ,  H01L27/1233 ,  H01L29/66795 ,  H01L29/7846 ,  H01L29/7854

Abstract: A semiconductor device is provided that includes a deep trench defining an active region, and a fin-type pattern protruding within the active region. The fin-type pattern having a lower portion, an upper portion of a narrower width than the lower portion, and a first stepped portion formed at a boundary between the upper portion and the lower portion. The device also includes a first field insulating film surrounding the lower portion and a second field insulating film formed on the first field insulating film and partially surrounding the upper portion.