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    SEMICONDUCTOR DEVICES
    1.
    发明公开
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20240014209A1

    公开(公告)日：2024-01-11

    申请号：US18473412

    申请日：2023-09-25

    申请人： Samsung Electronics Co., Ltd.

    发明人： Gyu-Hwan Ahn ,  Sung-Soo Kim ,  Chae-Ho Na ,  Dong-Hyun Roh ,  Sang-Jin Hyun

    IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L29/66

    CPC分类号： H01L29/0642 ,  H01L29/785 ,  H01L29/66545

    摘要： A semiconductor device includes active fins on a substrate, a first isolation pattern on the substrate, the first isolation pattern extending on a lower sidewall of each of the active fins, a third isolation pattern including an upper portion extending into the first isolation pattern and a lower portion extending into an upper portion of the substrate, the lower portion contacting the upper portion of the third isolation pattern, and having a lower surface with a width greater than that of an upper surface thereof, and a second isolation pattern extending in the substrate under the third isolation pattern, contacting the third isolation pattern, and having a rounded lower surface.

    SEMICONDUCTOR DEVICES
    2.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20210193656A1

    公开(公告)日：2021-06-24

    申请号：US17177824

    申请日：2021-02-17

    申请人： Samsung Electronics Co., Ltd.

    发明人： Gyu-Hwan Ahn ,  Sung-Soo Kim ,  Chae-Ho Na ,  Dong-Hyun Roh ,  Sang-Jin Hyun

    IPC分类号： H01L27/088 ,  H01L21/8234 ,  H01L21/762

    摘要： A semiconductor device includes active fins on a substrate, a first isolation pattern on the substrate, the first isolation pattern extending on a lower sidewall of each of the active fins, a third isolation pattern including an upper portion extending into the first isolation pattern and a lower portion extending into an upper portion of the substrate, the lower portion contacting the upper portion of the third isolation pattern, and having a lower surface with a width greater than that of an upper surface thereof, and a second isolation pattern extending in the substrate under the third isolation pattern, contacting the third isolation pattern, and having a rounded lower surface.

    Method and apparatus for controlling modem in wireless communication system
    3.
    发明授权
    Method and apparatus for controlling modem in wireless communication system 有权

    公开(公告)号：US10999751B2

    公开(公告)日：2021-05-04

    申请号：US16536937

    申请日：2019-08-09

    申请人： Samsung Electronics Co., Ltd.

    发明人： Se-Bin Im ,  Min-Goo Kim ,  Sung-Soo Kim ,  Chae-Hag Yi

    IPC分类号： H04W24/08 ,  H04W72/12

    摘要： Disclosed is a terminal in a communication system including a transceiver, and at least one processor configured to generate modem control information, transmit, to a server, the modem control information through the transceiver, when the generated modem control information includes location information of the terminal, receive, from the server, the modem control information related to an estimated movement path of the terminal, the estimated movement path being determined based on the location information of the terminal, and perform a communication using the updated modem control information, wherein the updated modem control information includes at least one of cell identity information, signal strength per cell, frequency offset, timing offset, channel state information (CSI), interference information, and downlink configuration information.

    Semiconductor devices
    7.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US11804483B2

    公开(公告)日：2023-10-31

    申请号：US17177824

    申请日：2021-02-17

    申请人： Samsung Electronics Co., Ltd.

    发明人： Gyu-Hwan Ahn ,  Sung-Soo Kim ,  Chae-Ho Na ,  Dong-Hyun Roh ,  Sang-Jin Hyun

    IPC分类号： H01L27/088 ,  H01L21/8234 ,  H01L21/762

    CPC分类号： H01L27/0886 ,  H01L21/76224 ,  H01L21/823481

    摘要： A semiconductor device includes active fins on a substrate, a first isolation pattern on the substrate, the first isolation pattern extending on a lower sidewall of each of the active fins, a third isolation pattern including an upper portion extending into the first isolation pattern and a lower portion extending into an upper portion of the substrate, the lower portion contacting the upper portion of the third isolation pattern, and having a lower surface with a width greater than that of an upper surface thereof, and a second isolation pattern extending in the substrate under the third isolation pattern, contacting the third isolation pattern, and having a rounded lower surface.

    SEMICONDUCTOR DEVICES
    10.
    发明申请
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20200098751A1

    公开(公告)日：2020-03-26

    申请号：US16401362

    申请日：2019-05-02

    申请人： Samsung Electronics Co., Ltd.

    发明人： Gyu-Hwan Ahn ,  Sung-Soo Kim ,  Chae-Ho Na ,  Dong-Hyun Roh ,  Sang-Jin Hyun

    IPC分类号： H01L27/088 ,  H01L21/762 ,  H01L21/8234

    摘要： A semiconductor device includes active fins on a substrate, a first isolation pattern on the substrate, the first isolation pattern extending on a lower sidewall of each of the active fins, a third isolation pattern including an upper portion extending into the first isolation pattern and a lower portion extending into an upper portion of the substrate, the lower portion contacting the upper portion of the third isolation pattern, and having a lower surface with a width greater than that of an upper surface thereof, and a second isolation pattern extending in the substrate under the third isolation pattern, contacting the third isolation pattern, and having a rounded lower surface.