公开(公告)号：US09184376B2

公开(公告)日：2015-11-10

申请号：US14315610

申请日：2014-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Hwan Park ,  Soonoh Park ,  Sangyong Kim ,  Joonmyoung Lee

IPC: H01L43/10 ,  H01L43/08

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/08

Abstract: A magnetic memory device may include a substrate and a magnetic tunnel junction memory element on the substrate. The magnetic tunnel junction memory element may include a reference magnetic layer, a tunnel barrier layer, and a free magnetic layer. The reference magnetic layer may include a first pinned layer, an exchange coupling layer, and a second pinned layer. The exchange coupling layer may be between the first and second pinned layers, and the second pinned layer may include a ferromagnetic layer and a non-magnetic layer. The second pinned layer may be between the first pinned layer and the tunnel barrier layer, and the tunnel barrier layer may be between the reference magnetic layer and the free magnetic layer.

Abstract translation: 磁存储器件可以在衬底上包括衬底和磁性隧道结存储元件。 磁性隧道结存储元件可以包括参考磁性层，隧道势垒层和自由磁性层。 参考磁性层可以包括第一固定层，交换耦合层和第二固定层。 交换耦合层可以在第一和第二被钉扎层之间，并且第二被钉扎层可以包括铁磁层和非磁性层。 第二被钉扎层可以在第一被钉扎层和隧道势垒层之间，并且隧道势垒层可以在参考磁性层和自由磁性层之间。

公开(公告)号：US09893271B2

公开(公告)日：2018-02-13

申请号：US15210151

申请日：2016-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghwan Park ,  Jonguk Kim ,  Soonoh Park ,  Jung Moo Lee ,  Sugwoo Jung

IPC: H01L29/82 ,  H01L43/00 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: A semiconductor memory device includes a selection transistor on a semiconductor substrate, a lower contact plug connected to a drain region of the selection transistor, and a magnetic tunnel junction pattern on the lower contact plug, the magnetic tunnel junction pattern including a bottom electrode in contact with the lower contact plug, the bottom electrode being an amorphous tantalum nitride layer, a top electrode on the bottom electrode, first and second magnetic layers between the top and bottom electrodes, and a tunnel barrier layer between the first and second magnetic layers.