公开(公告)号：US11004517B2

公开(公告)日：2021-05-11

申请号：US16356182

申请日：2019-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunjung Lee ,  Chanha Kim ,  Suk-eun Kang ,  Seungkyung Ro ,  Kwangwoo Lee ,  Juwon Lee ,  Jinwook Lee ,  Heewon Lee

IPC: G11C16/04 ,  G11C16/26 ,  G11C16/34 ,  G06F3/06 ,  G06F11/10 ,  G11C29/52 ,  G11C11/56

Abstract: A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.

公开(公告)号：US20200058359A1

公开(公告)日：2020-02-20

申请号：US16356182

申请日：2019-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunjung Lee ,  Chanha Kim ,  Suk-eun Kang ,  Seungkyung Ro ,  Kwangwoo Lee ,  Juwon Lee ,  Jinwook Lee ,  Heewon Lee

IPC: G11C16/26 ,  G11C16/34 ,  G06F3/06 ,  G06F11/10 ,  G11C29/52

Abstract: A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.