公开(公告)号：US20230148409A1

公开(公告)日：2023-05-11

申请号：US17979801

申请日：2022-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwoo Hong ,  Heewoong Kang ,  Yunjung Lee

IPC: G06F3/06

CPC classification number: G06F3/0604 ,  G06F3/0653 ,  G06F3/0679 ,  G06F3/064

Abstract: A memory controller may include: a weight management unit configured to store a weight based on a read disturb strength of each of the plurality of word lines of the plurality of memory blocks; a counter configured to increase a read count of a management group that includes a target word line, based on the weight of the target word line obtained from the weight management unit, the counter configured to increase the read count in response to the controller receiving a read request for the target word line from an external host device; and a verification operation determination unit configured to determine whether to perform or to not perform a word line verification operation based on a comparison of a reference interval count with the read count of the management group that includes the target word line.

公开(公告)号：US12086408B2

公开(公告)日：2024-09-10

申请号：US17979801

申请日：2022-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwoo Hong ,  Heewoong Kang ,  Yunjung Lee

IPC: G06F3/06

CPC classification number: G06F3/0604 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0653 ,  G06F3/0679

Abstract: A memory controller may include: a weight management unit configured to store a weight based on a read disturb strength of each of the plurality of word lines of the plurality of memory blocks; a counter configured to increase a read count of a management group that includes a target word line, based on the weight of the target word line obtained from the weight management unit, the counter configured to increase the read count in response to the controller receiving a read request for the target word line from an external host device; and a verification operation determination unit configured to determine whether to perform or to not perform a word line verification operation based on a comparison of a reference interval count with the read count of the management group that includes the target word line.

公开(公告)号：US12002519B2

公开(公告)日：2024-06-04

申请号：US17534989

申请日：2021-11-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjin Yoo ,  Yunjung Lee ,  Heewon Lee ,  Kwangwoo Lee

IPC: G11C16/26 ,  G11C16/34 ,  G11C16/04

CPC classification number: G11C16/26 ,  G11C16/3495 ,  G11C16/0483

Abstract: Disclosed is an operation method of a controller which is configured to control a nonvolatile memory device. The method includes receiving cell counting data associated with selected memory cells included in the nonvolatile memory device from the nonvolatile memory device, adjusting operation parameters of the nonvolatile memory device based on the cell counting data, performing a valley search operation for the selected memory cells based on the adjusted operation parameters, and performing a read operation for the selected memory cells based on a result of the valley search operation.

公开(公告)号：US20210057025A1

公开(公告)日：2021-02-25

申请号：US16838078

申请日：2020-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunjung Lee ,  Chanha Kim ,  Kangho Roh ,  Heewon Lee

IPC: G11C11/56 ,  G11C16/04 ,  G11C16/26 ,  G11C16/10

Abstract: A nonvolatile memory device including: a memory cell array, the memory cell array including a plurality of cell strings, at least one of the cell strings including a plurality of memory cells stacked in a direction perpendicular to a surface of a substrate, at least one of the memory cells is a multi-level cell storing at least three bits; and a control logic circuit configured to control a page buffer to read a fast read page of the memory cells with one read voltage and at least two normal read pages of the memory cells with the same number of read voltages.

公开(公告)号：US20240427498A1

公开(公告)日：2024-12-26

申请号：US18421594

申请日：2024-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwoo Hong ,  Kwangwoo Lee ,  Yunjung Lee

IPC: G06F3/06

Abstract: Provided are a storage device and an operating method of a memory controller. The storage device includes a non-volatile memory that outputs data from selected memory cells based on read voltage information, the read voltage information including a start read voltage, an end read voltage, and a read command. Moreover, the storage device includes a memory controller that determines whether a search region defined by the start read voltage and the end read voltage is within a multi-peak region of a threshold voltage distribution corresponding to a first state of the selected memory cells, based on the search region being within the multi-peak region, change the search region, and based on the search region not being within to the multi-peak region, determine a new read voltage using the search region.

公开(公告)号：US11715516B2

公开(公告)日：2023-08-01

申请号：US17391209

申请日：2021-08-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunjung Lee ,  Chanha Kim ,  Kangho Roh ,  Heewon Lee

IPC: G11C7/00 ,  G11C11/56 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26

CPC classification number: G11C11/5671 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  G11C2216/14

Abstract: A nonvolatile memory device including: a memory cell array, the memory cell array including a plurality of cell strings, at least one of the cell strings including a plurality of memory cells stacked in a direction perpendicular to a surface of a substrate, at least one of the memory cells is a multi-level cell storing at least three bits; and a control logic circuit configured to control a page buffer to read a fast read page of the memory cells with one read voltage and at least two normal read pages of the memory cells with the same number of read voltages.

公开(公告)号：US11081171B2

公开(公告)日：2021-08-03

申请号：US16838078

申请日：2020-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunjung Lee ,  Chanha Kim ,  Kangho Roh ,  Heewon Lee

IPC: G11C11/56 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26

Abstract: A nonvolatile memory device including: a memory cell array, the memory cell array including a plurality of cell strings, at least one of the cell strings including a plurality of memory cells stacked in a direction perpendicular to a surface of a substrate, at least one of the memory cells is a multi-level cell storing at least three bits; and a control logic circuit configured to control a page buffer to read a fast read page of the memory cells with one read voltage and at least two normal read pages of the memory cells with the same number of read voltages.

公开(公告)号：US11508451B2

公开(公告)日：2022-11-22

申请号：US16996266

申请日：2020-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangwoo Lee ,  Jinwoo Hong ,  Yunjung Lee

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/16 ,  G06F12/0891 ,  G11C16/28 ,  G06N20/00 ,  G06F12/02 ,  G11C16/30

Abstract: A storage device includes a nonvolatile memory device that includes a first storage area and a second storage area. A controller of the storage device controls the nonvolatile memory device and performs a read reclaim operation of reading data stored in the first storage area of the nonvolatile memory device and writing the read data in the second storage area. In the read reclaim operation, the controller is further configured to allow the nonvolatile memory device to perform sample read operations on the first storage area and to determine locations of the second storage area, at which the data are to be written, based on results of the sample read operations.

公开(公告)号：US11322206B2

公开(公告)日：2022-05-03

申请号：US17036060

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwoo Hong ,  Chanha Kim ,  Kangho Roh ,  Seungkyung Ro ,  Yunjung Lee ,  Heewon Lee

IPC: G11C7/00 ,  G11C16/10 ,  G06N20/00 ,  G06F3/06 ,  G11C16/04 ,  H01L27/115

Abstract: A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a memory controller. The non-volatile memory includes memory blocks each including a word lines. The memory controller determines a word line strength of each of the word lines, adjusts a state count of each of the word lines based on the word line strengths, and adjust a program parameter of each of the word lines to decrease a program time variation between the word lines.

公开(公告)号：US10802728B2

公开(公告)日：2020-10-13

申请号：US16416750

申请日：2019-05-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangwoo Lee ,  Chanha Kim ,  Yunjung Lee ,  Jisoo Kim ,  Seungkyung Ro ,  Jinwook Lee ,  Heewon Lee

IPC: G06F3/06 ,  G06N20/00 ,  G06F11/10 ,  G11C16/04 ,  G11C16/26 ,  G11C29/52

Abstract: A storage device includes a nonvolatile memory device including a plurality of memory blocks, each including a plurality of memory cells connected to a plurality of word lines, and a controller configured to perform a first read operation on memory cells connected to a selected word line included in a selected memory block based on a request of an external host device. The controller is further configured to perform a check read operation that checks a reliability of the memory cells of the selected memory block after performing the first read operation. In the check read operation, the controller is further configured to select and perform one of an actual check and a machine learning-based check.