公开(公告)号：US20150056758A1

公开(公告)日：2015-02-26

申请号：US14507235

申请日：2014-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong HEO ,  Hyun-jong CHUNG ,  Sun-ae SEO ,  Sung-hoon LEE ,  Hee-jun YANG

IPC: H01L29/66 ,  H01L29/40

CPC classification number: H01L29/66045 ,  H01L29/1606 ,  H01L29/401 ,  H01L29/66431 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786 ,  Y10S977/936

Abstract: The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.

Abstract translation: 石墨烯电子器件可以包括在导电衬底上的栅极氧化物，导电衬底被配置为用作栅电极，栅极氧化物上的一对第一金属，一对第一金属彼此分开，石墨烯沟道层 在第一金属和第一金属之间延伸，以及在石墨烯通道层的两个边缘上的源电极和漏电极。

公开(公告)号：US20130203222A1

公开(公告)日：2013-08-08

申请号：US13796918

申请日：2013-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-jong CHUNG ,  Seung-jae BAEK ,  Sun-ae SEO ,  Yun-sung WOO ,  Jin-seong HEO ,  David SEO

IPC: H01L29/66

CPC classification number: H01L29/66045 ,  H01L23/522 ,  H01L27/0688 ,  H01L27/124 ,  H01L29/1606 ,  H01L29/45 ,  H01L29/7781 ,  H01L29/78684 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A graphene electronic device may include a silicon substrate, connecting lines on the silicon substrate, a first electrode and a second electrode on the silicon substrate, and an interlayer dielectric on the silicon substrate. The interlayer dielectric may be configured to cover the connecting lines and the first and second electrodes and the interlayer dielectric may be further configured to expose at least a portion of the first and second electrodes. The graphene electronic device may further include an insulating layer on the interlayer dielectric and a graphene layer on the insulating layer, the graphene layer having a first end and a second end. The first end of the graphene layer may be connected to the first electrode and the second end of the graphene layer may be connected to the second electrode.

Abstract translation: 石墨烯电子器件可以包括硅衬底，硅衬底上的连接线，硅衬底上的第一电极和第二电极，以及硅衬底上的层间电介质。 层间电介质可以被配置为覆盖连接线，并且第一和第二电极和层间电介质可以被进一步配置为暴露第一和第二电极的至少一部分。 所述石墨烯电子器件还可以包括在所述层间电介质上的绝缘层和所述绝缘层上的石墨烯层，所述石墨烯层具有第一端和第二端。 石墨烯层的第一端可以连接到第一电极，并且石墨烯层的第二端可以连接到第二电极。

公开(公告)号：US20140021445A1

公开(公告)日：2014-01-23

申请号：US14035305

申请日：2013-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong HEO ,  Hyun-jong CHUNG ,  Sun-ae SEO ,  Sung-hoon LEE ,  Hee-jun YANG

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66045 ,  H01L29/1606 ,  H01L29/401 ,  H01L29/66431 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786 ,  Y10S977/936

Abstract: The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.

Abstract translation: 石墨烯电子器件可以包括在导电衬底上的栅极氧化物，导电衬底被配置为用作栅电极，栅极氧化物上的一对第一金属，一对第一金属彼此分开，石墨烯沟道层 在第一金属和第一金属之间延伸，以及在石墨烯通道层的两个边缘上的源电极和漏电极。

公开(公告)号：US20130313512A1

公开(公告)日：2013-11-28

申请号：US13957602

申请日：2013-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee-jun YANG ,  Sun-ae SEO ,  Sung-hoon LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66477 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/1079 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78684 ,  Y10S977/734 ,  Y10S977/838 ,  Y10S977/842

Abstract: A graphene electronic device and a method of fabricating the graphene electronic device are provided. The graphene electronic device may include a graphene channel layer formed on a hydrophobic polymer layer, and a passivation layer formed on the graphene channel layer. The hydrophobic polymer layer may prevent or reduce adsorption of impurities to transferred graphene, and a passivation layer may also prevent or reduce adsorption of impurities to a heat-treated graphene channel layer.

Abstract translation: 提供石墨烯电子器件和制造石墨烯电子器件的方法。 石墨烯电子器件可以包括形成在疏水聚合物层上的石墨烯通道层和形成在石墨烯通道层上的钝化层。 疏水性聚合物层可以防止或减少杂质对转移的石墨烯的吸附，并且钝化层也可以防止或减少杂质对经热处理的石墨烯通道层的吸附。

公开(公告)号：US20140225068A1

公开(公告)日：2014-08-14

申请号：US14244275

申请日：2014-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-jong CHUNG ,  Jin-seong HEO ,  Hee-jun YANG ,  Sun-ae SEO ,  Sung-hoon LEE

IPC: H01L29/66 ,  H01L29/775

CPC classification number: H01L29/66477 ,  H01L29/42384 ,  H01L29/775 ,  H01L29/78684

Abstract: A graphene electronic device includes a graphene channel layer on a substrate, a source electrode on an end portion of the graphene channel layer and a drain electrode on another end portion of the graphene channel layer, a gate oxide on the graphene channel layer and between the source electrode and the drain electrode, and a gate electrode on the gate oxide. The gate oxide has substantially the same shape as the graphene channel layer between the source electrode and the drain electrode.

Abstract translation: 石墨烯电子器件包括在衬底上的石墨烯通道层，石墨烯通道层的端部上的源电极和在石墨烯通道层的另一端部上的漏电极，石墨烯通道层上的栅极氧化物 源电极和漏电极以及栅极氧化物上的栅电极。 栅极氧化物具有与源电极和漏电极之间的石墨烯沟道层基本相同的形状。

公开(公告)号：US20140131626A1

公开(公告)日：2014-05-15

申请号：US14162397

申请日：2014-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-hoon LEE ,  Sun-ae SEO ,  Yun-sung WOO ,  Hyun-jong CHUNG ,  Jin-seong HEO

IPC: H01L29/16

CPC classification number: H01L29/1606 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  H01L29/7781 ,  H01L29/78684

Abstract: Graphene, a method of fabricating the same, and a transistor having the graphene are provided, the graphene includes a structure of carbon (C) atoms partially substituted with boron (B) atoms and nitrogen (N) atoms. The graphene has a band gap. The graphene substituted with boron and nitrogen may be used as a channel of a field effect transistor. The graphene may be formed by performing chemical vapor deposition (CVD) method using borazine or ammonia borane as a boron nitride (B-N) precursor.

Abstract translation: 提供石墨烯，其制造方法和具有石墨烯的晶体管，石墨烯包括部分被硼（B）原子和氮（N）原子取代的碳（C）原子的结构。 石墨烯具有带隙。 用硼和氮取代的石墨烯可以用作场效应晶体管的通道。 可以通过使用环硼氮烷或氨硼烷作为氮化硼（B-N）前体进行化学气相沉积（CVD）方法来形成石墨烯。