公开(公告)号：US20200317511A1

公开(公告)日：2020-10-08

申请号：US16906214

申请日：2020-06-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeon-jin SHIN ,  Jae-young CHOI ,  Yun-sung WOO ,  Seon-mi YOON

IPC: B82Y30/00 ,  B82Y40/00 ,  H01L21/02 ,  C23C16/26 ,  C01B32/186 ,  C23C16/02 ,  C23C16/56

Abstract: A method of preparing crystalline graphene includes performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor, introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon, and binding of the activated carbon on the inorganic substrate to grow the crystalline graphene.

公开(公告)号：US20140014970A1

公开(公告)日：2014-01-16

申请号：US13937563

申请日：2013-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun-sung WOO ,  Seon-mi YOON ,  Hyeon-jin SHIN ,  Dong-wook LEE ,  Jae-young CHOI

IPC: H01L21/02 ,  H01L29/16

CPC classification number: H01L21/02527 ,  H01L21/02378 ,  H01L21/02612 ,  H01L21/02664 ,  H01L21/8213 ,  H01L29/1606 ,  H01L29/7781 ,  Y10S977/734

Abstract: A method of fabricating a single-layer graphene on a silicon carbide (SiC) wafer includes forming a plurality of graphene layers on the SiC wafer such that the plurality of graphene layers are on a buffer layer of the SiC wafer, the buffer layer being formed of carbon; removing the plurality of graphene layers from the buffer layer; and converting the buffer layer to a single-layer graphene.

Abstract translation: 在碳化硅（SiC）晶片上制造单层石墨烯的方法包括在SiC晶片上形成多个石墨烯层，使得多个石墨烯层位于SiC晶片的缓冲层上，形成缓冲层 的碳; 从缓冲层去除多个石墨烯层; 并将缓冲层转化为单层石墨烯。

公开(公告)号：US20150129839A1

公开(公告)日：2015-05-14

申请号：US14265670

申请日：2014-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-sung WOO

IPC: H01L29/16 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L29/1606 ,  H01L29/0673 ,  H01L29/7839 ,  H01L29/78684 ,  H01L29/78696

Abstract: Provided is a graphene switching device including: a graphene layer formed on a substrate; a plurality of semiconductor nanowires on the substrate; a first electrode connected to a second end of the graphene layer; a second electrode on the substrate to face the first electrode so as to be connected to the plurality of semiconductor nanowires; a gate insulating layer on the substrate to cover the graphene layer; and a gate electrode on the gate insulating layer. The gate electrode and the plurality of semiconductor nanowires face each other with the graphene layer therebetween. At least one of the plurality of semiconductor nanowires is connected to at least one of the second electrode, the graphene layer, and the other of the plurality of semiconductor nanowires.

Abstract translation: 提供了一种石墨烯开关装置，其包括：在基板上形成的石墨烯层; 在所述基板上的多个半导体纳米线; 连接到所述石墨烯层的第二端的第一电极; 在所述基板上的与所述第一电极相对的第二电极，以连接到所述多个半导体纳米线; 在所述基板上的覆盖所述石墨烯层的栅极绝缘层; 以及栅极绝缘层上的栅电极。 栅电极和多个半导体纳米线彼此面对，其间具有石墨烯层。 多个半导体纳米线中的至少一个连接到第二电极，石墨烯层和多个半导体纳米线中的另一个中的至少一个。

公开(公告)号：US20130203222A1

公开(公告)日：2013-08-08

申请号：US13796918

申请日：2013-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-jong CHUNG ,  Seung-jae BAEK ,  Sun-ae SEO ,  Yun-sung WOO ,  Jin-seong HEO ,  David SEO

IPC: H01L29/66

CPC classification number: H01L29/66045 ,  H01L23/522 ,  H01L27/0688 ,  H01L27/124 ,  H01L29/1606 ,  H01L29/45 ,  H01L29/7781 ,  H01L29/78684 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A graphene electronic device may include a silicon substrate, connecting lines on the silicon substrate, a first electrode and a second electrode on the silicon substrate, and an interlayer dielectric on the silicon substrate. The interlayer dielectric may be configured to cover the connecting lines and the first and second electrodes and the interlayer dielectric may be further configured to expose at least a portion of the first and second electrodes. The graphene electronic device may further include an insulating layer on the interlayer dielectric and a graphene layer on the insulating layer, the graphene layer having a first end and a second end. The first end of the graphene layer may be connected to the first electrode and the second end of the graphene layer may be connected to the second electrode.

Abstract translation: 石墨烯电子器件可以包括硅衬底，硅衬底上的连接线，硅衬底上的第一电极和第二电极，以及硅衬底上的层间电介质。 层间电介质可以被配置为覆盖连接线，并且第一和第二电极和层间电介质可以被进一步配置为暴露第一和第二电极的至少一部分。 所述石墨烯电子器件还可以包括在所述层间电介质上的绝缘层和所述绝缘层上的石墨烯层，所述石墨烯层具有第一端和第二端。 石墨烯层的第一端可以连接到第一电极，并且石墨烯层的第二端可以连接到第二电极。

公开(公告)号：US20140231752A1

公开(公告)日：2014-08-21

申请号：US14180928

申请日：2014-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon-jin SHIN ,  Kyung-eun BYUN ,  Hyun-jae SONG ,  Seong-jun PARK ,  David SEO ,  Yun-sung WOO ,  Dong-wook LEE ,  Jae-ho LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO ,  In-kyeong YOO

IPC: H01L29/16 ,  H01L33/34 ,  H01L31/028 ,  H01L29/786

CPC classification number: H01L29/1606 ,  H01L29/786 ,  H01L29/78642 ,  H01L29/78684 ,  H01L31/028 ,  H01L31/08 ,  H01L33/34 ,  H01L51/0046 ,  H01L51/0504 ,  H01L51/0558 ,  H01L51/0562 ,  H01L51/0566 ,  H01L51/057 ,  H01L51/428 ,  H01L51/50

Abstract: A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.

Abstract translation: 提供了石墨烯装置和包括该石墨烯装置的电子装置。 根据示例性实施例，石墨烯装置包括晶体管，其包括源极，栅极和漏极，载流子移动的有源层以及栅极和有源层之间的石墨烯层。 石墨烯层可以被配置为既用作有源层的电极和晶体管的沟道层。

公开(公告)号：US20140141600A1

公开(公告)日：2014-05-22

申请号：US13917786

申请日：2013-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Wook LEE ,  Hyeon-jin SHIN ,  Seong-jun PARK ,  Kyung-eun BYUN ,  David SEO ,  Hyun-jae SONG ,  Yun-sung WOO ,  Jae-ho LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO

IPC: H01L21/02

CPC classification number: H01L21/02527 ,  H01L21/0242 ,  H01L21/02529 ,  H01L21/02612 ,  H01L21/02656 ,  H01L29/1606

Abstract: A method of preparing graphene includes forming a silicon carbide thin film on a substrate, forming a metal thin film on the silicon carbide thin film, and forming a metal composite layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film.

Abstract translation: 制备石墨烯的方法包括在基板上形成碳化硅薄膜，在碳化硅薄膜上形成金属薄膜，通过加热碳化硅薄膜和金属薄膜，在基板上形成金属复合层和石墨烯 电影。

公开(公告)号：US20140131626A1

公开(公告)日：2014-05-15

申请号：US14162397

申请日：2014-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-hoon LEE ,  Sun-ae SEO ,  Yun-sung WOO ,  Hyun-jong CHUNG ,  Jin-seong HEO

IPC: H01L29/16

CPC classification number: H01L29/1606 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  H01L29/7781 ,  H01L29/78684

Abstract: Graphene, a method of fabricating the same, and a transistor having the graphene are provided, the graphene includes a structure of carbon (C) atoms partially substituted with boron (B) atoms and nitrogen (N) atoms. The graphene has a band gap. The graphene substituted with boron and nitrogen may be used as a channel of a field effect transistor. The graphene may be formed by performing chemical vapor deposition (CVD) method using borazine or ammonia borane as a boron nitride (B-N) precursor.

Abstract translation: 提供石墨烯，其制造方法和具有石墨烯的晶体管，石墨烯包括部分被硼（B）原子和氮（N）原子取代的碳（C）原子的结构。 石墨烯具有带隙。 用硼和氮取代的石墨烯可以用作场效应晶体管的通道。 可以通过使用环硼氮烷或氨硼烷作为氮化硼（B-N）前体进行化学气相沉积（CVD）方法来形成石墨烯。