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    Integrated circuit devices and methods of manufacturing the same
    1.
    发明授权
    Integrated circuit devices and methods of manufacturing the same 有权

    公开(公告)号：US12199137B2

    公开(公告)日：2025-01-14

    申请号：US17583790

    申请日：2022-01-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jinho Lee ,  Younsoo Kim ,  Haeryong Kim ,  Sunghyun Kim

    IPC: H01L21/00 ,  H01L49/02 ,  H10B12/00

    Abstract: An integrated circuit (IC) device includes a lower electrode including a first metal, a dielectric film on the lower electrode, and a conductive interface layer between the lower electrode and the dielectric film. The conductive interface layer includes a metal oxide film including at least one metal element. An upper electrode including a second metal is opposite the lower electrode, with the conductive interface layer and the dielectric film therebetween. To manufacture an IC device, an electrode including a metal is formed adjacent to an insulating pattern on a substrate. A conductive interface layer including a metal oxide film including at least one metal element is selectively formed on a surface of the electrode. A dielectric film is formed to be in contact with the conductive interface layer and the insulating pattern.

    INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME
    2.
    发明申请
    INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20220416010A1

    公开(公告)日：2022-12-29

    申请号：US17583790

    申请日：2022-01-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jinho Lee ,  Younsoo Kim ,  Haeryong Kim ,  Sunghyun Kim

    IPC: H01L49/02

    Abstract: An integrated circuit (IC) device includes a lower electrode including a first metal, a dielectric film on the lower electrode, and a conductive interface layer between the lower electrode and the dielectric film. The conductive interface layer includes a metal oxide film including at least one metal element. An upper electrode including a second metal is opposite the lower electrode, with the conductive interface layer and the dielectric film therebetween. To manufacture an IC device, an electrode including a metal is formed adjacent to an insulating pattern on a substrate. A conductive interface layer including a metal oxide film including at least one metal element is selectively formed on a surface of the electrode. A dielectric film is formed to be in contact with the conductive interface layer and the insulating pattern.

    INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME
    5.
    发明申请
    INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20250098186A1

    公开(公告)日：2025-03-20

    申请号：US18966548

    申请日：2024-12-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jinho Lee ,  Younsoo Kim ,  Haeryong Kim ,  Sunghyun Kim

    IPC: H10B12/00

    Abstract: An integrated circuit (IC) device includes a lower electrode including a first metal, a dielectric film on the lower electrode, and a conductive interface layer between the lower electrode and the dielectric film. The conductive interface layer includes a metal oxide film including at least one metal element. An upper electrode including a second metal is opposite the lower electrode, with the conductive interface layer and the dielectric film therebetween. To manufacture an IC device, an electrode including a metal is formed adjacent to an insulating pattern on a substrate. A conductive interface layer including a metal oxide film including at least one metal element is selectively formed on a surface of the electrode. A dielectric film is formed to be in contact with the conductive interface layer and the insulating pattern.

    Method for processing data using neural network and electronic device for supporting the same
    7.
    发明授权
    Method for processing data using neural network and electronic device for supporting the same 有权

    公开(公告)号：US11561516B2

    公开(公告)日：2023-01-24

    申请号：US16682243

    申请日：2019-11-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sunghyun Kim ,  Ohsang Kwon ,  Minjung Kim

    IPC: G05B13/02 ,  G06N3/063

    Abstract: An electronic device is provided. The electronic device includes a switch configured to select a mode of the electronic device, a multiply and accumulate (MAC) array configured to include a plurality of MAC units, and at least one processor configured to include a zero weight skip unit for confirming a first weight having a value of ‘0’ among weights related with input data, and for forwarding a second weight not having a value of ‘0’ among the weights, to the MAC array. The at least one processor is configured to acquire the input data, acquire the weights, select the mode of the electronic device by using the switch, in response to a first mode of the electronic device being selected, perform convolution operations between the input data and the second weight forwarded to the MAC array through the zero weight skip unit, and, in response to a second mode of the electronic device being selected, perform convolution operations between the input data and the weights forwarded to the MAC array.

    Method of operating memory system with replay attack countermeasure and memory system performing the same
    9.
    发明授权
    Method of operating memory system with replay attack countermeasure and memory system performing the same 有权

    公开(公告)号：US11552801B2

    公开(公告)日：2023-01-10

    申请号：US16790243

    申请日：2020-02-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sunghyun Kim ,  Junho Huh

    IPC: H04L9/32 ,  G06F3/06 ,  G06F21/55

    Abstract: In a method of operating a memory system, first security data and a first timestamp for preventing a replay attack are written by a host device to a first memory area which is an external memory area. A second timestamp is updated by the host device based on the first timestamp. The second timestamp corresponding to the first timestamp is stored in a second memory area distinguished from the first memory area. A first notification signal representing a result of updating the second timestamp is received by the host device. A writing operation for the first security data is completed when it is determined, by the host device, based on the first notification signal that the second timestamp is successfully updated.

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