公开(公告)号：US20230142938A1

公开(公告)日：2023-05-11

申请号：US17901386

申请日：2022-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： JINGU KIM ,  DOOHWAN LEE ,  SANGKYU LEE ,  JEONGHO LEE ,  TAESUNG JEONG

IPC: H01L49/02 ,  H01L23/498 ,  H01L25/18 ,  H01L23/538

CPC classification number: H01L28/84 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49816 ,  H01L25/18 ,  H01L23/5385 ,  H01L23/5383 ,  H01L23/5384 ,  H01L2224/16227 ,  H01L2224/16145 ,  H01L24/16

Abstract: A semiconductor device includes a substrate having a recess region, a first electrode in the recess region and having a three-dimensional network structure, a first dielectric layer in the recess region and covering the first electrode, a second electrode in the recess region and covering the first dielectric layer, and a molding layer filling a remaining portion of the recess region and covering the second electrode.