公开(公告)号：US11532581B2

公开(公告)日：2022-12-20

申请号：US17158450

申请日：2021-01-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Uidam Jung ,  Hyoungyol Mun ,  Sangjun Park ,  Kyuha Lee

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/18

Abstract: A semiconductor device includes a first structure including a first bonding structure, and a second structure on the first structure and including a second bonding structure connected to the first bonding structure. The first bonding structure includes a first insulating layer, a first bonding insulating layer on the first insulating layer, first bonding pads penetrating at least a portion of the first insulating layer and the first bonding insulating layer, and first metal patterns in the first insulating layer and in contact with the first bonding insulating layer, and having an upper surface at a lower level than upper surfaces of the first bonding pads. The second bonding structure includes a second bonding insulating layer bonded to the first bonding insulating layer, a second insulating layer on the second bonding insulating layer, and second bonding pads penetrating the second bonding insulating layer and connected to the first bonding pads.

公开(公告)号：US20240379647A1

公开(公告)日：2024-11-14

申请号：US18780646

申请日：2024-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Uidam Jung ,  Youngbum Woo ,  Byungkyu Kim ,  Eunji Kim ,  Seungwoo Paek

IPC: H01L25/18 ,  H01L23/00 ,  H10B43/10 ,  H10B43/27

Abstract: A semiconductor device includes an insulating structure; a plurality of horizontal layers vertically stacked and spaced apart from each other in the insulating structure; a conductive material pattern contacting the insulating structure; and a vertical structure penetrating through the plurality of horizontal layers and extending into the conductive material pattern in the insulating structure. Each of the plurality of horizontal layers comprises a conductive material, the vertical structure comprises a vertical portion and a protruding portion, the vertical portion of the vertical structure penetrates through the plurality of horizontal layers, the protruding portion of the vertical structure extends from the vertical portion into the conductive material pattern, a width of the vertical portion is greater than a width of the protruding portion, and a side surface of the protruding portion is in contact with the conductive material pattern.

公开(公告)号：US11527524B2

公开(公告)日：2022-12-13

申请号：US17030887

申请日：2020-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Uidam Jung ,  Youngbum Woo ,  Byungkyu Kim ,  Eunji Kim ,  Seungwoo Paek

IPC: H01L25/18 ,  H01L27/11565 ,  H01L27/11582 ,  H01L23/00

Abstract: A semiconductor device includes an insulating structure; a plurality of horizontal layers vertically stacked and spaced apart from each other in the insulating structure; a conductive material pattern contacting the insulating structure; and a vertical structure penetrating through the plurality of horizontal layers and extending into the conductive material pattern in the insulating structure. Each of the plurality of horizontal layers comprises a conductive material, the vertical structure comprises a vertical portion and a protruding portion, the vertical portion of the vertical structure penetrates through the plurality of horizontal layers, the protruding portion of the vertical structure extends from the vertical portion into the conductive material pattern, a width of the vertical portion is greater than a width of the protruding portion, and a side surface of the protruding portion is in contact with the conductive material pattern.

公开(公告)号：US12080699B2

公开(公告)日：2024-09-03

申请号：US18054172

申请日：2022-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Uidam Jung ,  Youngbum Woo ,  Byungkyu Kim ,  Eunji Kim ,  Seungwoo Paek

IPC: H01L25/18 ,  H01L23/00 ,  H01L27/11582 ,  H10B43/10 ,  H10B43/27

CPC classification number: H01L25/18 ,  H01L24/05 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H10B43/10 ,  H10B43/27 ,  H01L2224/0557 ,  H01L2224/08145 ,  H01L2224/29186 ,  H01L2224/32145 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: A semiconductor device includes an insulating structure; a plurality of horizontal layers vertically stacked and spaced apart from each other in the insulating structure; a conductive material pattern contacting the insulating structure; and a vertical structure penetrating through the plurality of horizontal layers and extending into the conductive material pattern in the insulating structure. Each of the plurality of horizontal layers comprises a conductive material, the vertical structure comprises a vertical portion and a protruding portion, the vertical portion of the vertical structure penetrates through the plurality of horizontal layers, the protruding portion of the vertical structure extends from the vertical portion into the conductive material pattern, a width of the vertical portion is greater than a width of the protruding portion, and a side surface of the protruding portion is in contact with the conductive material pattern.

公开(公告)号：US20230067443A1

公开(公告)日：2023-03-02

申请号：US18054172

申请日：2022-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Uidam Jung ,  Youngbum Woo ,  Byungkyu Kim ,  Eunji Kim ,  Seungwoo Paek

IPC: H01L25/18 ,  H01L27/11582 ,  H01L27/11565 ,  H01L23/00

Abstract: A semiconductor device includes an insulating structure; a plurality of horizontal layers vertically stacked and spaced apart from each other in the insulating structure; a conductive material pattern contacting the insulating structure; and a vertical structure penetrating through the plurality of horizontal layers and extending into the conductive material pattern in the insulating structure. Each of the plurality of horizontal layers comprises a conductive material, the vertical structure comprises a vertical portion and a protruding portion, the vertical portion of the vertical structure penetrates through the plurality of horizontal layers, the protruding portion of the vertical structure extends from the vertical portion into the conductive material pattern, a width of the vertical portion is greater than a width of the protruding portion, and a side surface of the protruding portion is in contact with the conductive material pattern.

公开(公告)号：US20210202458A1

公开(公告)日：2021-07-01

申请号：US17030887

申请日：2020-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Uidam Jung ,  Youngbum Woo ,  Byungkyu Kim ,  Eunji Kim ,  Seungwoo Paek

IPC: H01L25/18 ,  H01L27/11582 ,  H01L27/11565 ,  H01L23/00

Abstract: A semiconductor device includes an insulating structure; a plurality of horizontal layers vertically stacked and spaced apart from each other in the insulating structure; a conductive material pattern contacting the insulating structure; and a vertical structure penetrating through the plurality of horizontal layers and extending into the conductive material pattern in the insulating structure. Each of the plurality of horizontal layers comprises a conductive material, the vertical structure comprises a vertical portion and a protruding portion, the vertical portion of the vertical structure penetrates through the plurality of horizontal layers, the protruding portion of the vertical structure extends from the vertical portion into the conductive material pattern, a width of the vertical portion is greater than a width of the protruding portion, and a side surface of the protruding portion is in contact with the conductive material pattern.