公开(公告)号：US20190113838A1

公开(公告)日：2019-04-18

申请号：US15938434

申请日：2018-03-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Seok Jung ,  Sung-Hoon Park ,  Jong-Su Kim ,  Suk-Jong Bae

IPC: G03F1/36

Abstract: A method of designing a layout of a photomask and a method of manufacturing a photomask, the method of designing a layout of a photomask including obtaining a design layout of a mask pattern; performing an optical proximity correction on the design layout to obtain design data; obtaining data of a position error of a pattern occurring during an exposure of the photomask according to the design data; correcting position data of the pattern based on the position error data to correct the design data; and providing the corrected position data to an exposure device to expose an exposure beam according to the corrected design data.

公开(公告)号：US10852636B2

公开(公告)日：2020-12-01

申请号：US15938434

申请日：2018-03-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Seok Jung ,  Sung-Hoon Park ,  Jong-Su Kim ,  Suk-Jong Bae

IPC: G03F1/36 ,  G06F30/398

Abstract: A method of designing a layout of a photomask and a method of manufacturing a photomask, the method of designing a layout of a photomask including obtaining a design layout of a mask pattern; performing an optical proximity correction on the design layout to obtain design data; obtaining data of a position error of a pattern occurring during an exposure of the photomask according to the design data; correcting position data of the pattern based on the position error data to correct the design data; and providing the corrected position data to an exposure device to expose an exposure beam according to the corrected design data.

公开(公告)号：US09583305B2

公开(公告)日：2017-02-28

申请号：US14632767

申请日：2015-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Seok Jung ,  Shuichi Tamamushi ,  In-Hwan Noh ,  In-Kyun Shin ,  Sang-Hee Lee ,  Jin Choi

IPC: H01J37/147 ,  H01J37/317 ,  H01J37/30

CPC classification number: H01J37/1472 ,  H01J37/3005 ,  H01J37/3174 ,  H01J2237/063 ,  H01J2237/15

Abstract: An exposure method may include: radiating a charged particle beam in an exposure system comprising a beam generator, radiating the beam, and main and auxiliary deflectors deflecting the beam to determine a position of a beam shot; determining whether a deflection distance from a first position of a latest radiated beam shot to a second position of a subsequent beam shot is within a first distance in a main field area of an exposure target area, the main field area having a size determined by the main deflector; setting a settling time according to the deflection distance so that a settling time of the subsequent beam shot is set to a constant minimum value, greater than zero, when the deflection distance from the first position to the second position is within the first distance; and deflecting the beam using the main deflector based on the set settling time.

Abstract translation: 曝光方法可以包括：在包括光束发生器，辐射光束以及偏转光束的主和辅助偏转器的曝光系统中辐射带电粒子束以确定射束的位置; 确定从最近发射光束的第一位置到随后的射束射击的第二位置的偏转距离是否在曝光目标区域的主场区域内的第一距离内，所述主场区域具有由 主导流板 根据所述偏转距离设定建立时间，使得当从所述第一位置到所述第二位置的偏转距离在所述第一距离内时，所述后续射束的建立时间被设定为大于零的恒定最小值; 并且基于设定的建立时间使用主偏转器偏转光束。