公开(公告)号：US09583305B2

公开(公告)日：2017-02-28

申请号：US14632767

申请日：2015-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Seok Jung ,  Shuichi Tamamushi ,  In-Hwan Noh ,  In-Kyun Shin ,  Sang-Hee Lee ,  Jin Choi

IPC: H01J37/147 ,  H01J37/317 ,  H01J37/30

CPC classification number: H01J37/1472 ,  H01J37/3005 ,  H01J37/3174 ,  H01J2237/063 ,  H01J2237/15

Abstract: An exposure method may include: radiating a charged particle beam in an exposure system comprising a beam generator, radiating the beam, and main and auxiliary deflectors deflecting the beam to determine a position of a beam shot; determining whether a deflection distance from a first position of a latest radiated beam shot to a second position of a subsequent beam shot is within a first distance in a main field area of an exposure target area, the main field area having a size determined by the main deflector; setting a settling time according to the deflection distance so that a settling time of the subsequent beam shot is set to a constant minimum value, greater than zero, when the deflection distance from the first position to the second position is within the first distance; and deflecting the beam using the main deflector based on the set settling time.

Abstract translation: 曝光方法可以包括：在包括光束发生器，辐射光束以及偏转光束的主和辅助偏转器的曝光系统中辐射带电粒子束以确定射束的位置; 确定从最近发射光束的第一位置到随后的射束射击的第二位置的偏转距离是否在曝光目标区域的主场区域内的第一距离内，所述主场区域具有由 主导流板 根据所述偏转距离设定建立时间，使得当从所述第一位置到所述第二位置的偏转距离在所述第一距离内时，所述后续射束的建立时间被设定为大于零的恒定最小值; 并且基于设定的建立时间使用主偏转器偏转光束。

公开(公告)号：US09989860B2

公开(公告)日：2018-06-05

申请号：US15255925

申请日：2016-09-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hee Lee ,  Hyun-Seok Uhm ,  Il-Yong Jang

IPC: G03B27/68 ,  G03F7/20 ,  G03F1/22 ,  G03F1/20

CPC classification number: G03F7/70283 ,  G03F1/20 ,  G03F1/22 ,  G03F1/68 ,  G03F1/76 ,  G03F1/78

Abstract: A pattern generating method includes, generating a first bit map from inputted pattern data. Characteristics of a plurality of beams for exposing a pattern on a substrate are analyzed, each of the plurality of beams being designated to correspond to one of a plurality of grids in the first bit map. The pattern data is corrected such that at least one of the plurality of beams is designated to expose at least a portion of the pattern on the substrate. A second bit map is generated from the corrected pattern data. The substrate is patterned using the plurality of beams according to the designation of the second bit map.