公开(公告)号：US20250151327A1

公开(公告)日：2025-05-08

申请号：US18666927

申请日：2024-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonhee KANG ,  Junchae LEE ,  Sungsoo KIM ,  Kyuhee HAN

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/417 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes a substrate; an active pattern extending on the substrate in a first direction; a plurality of channel layers on the active pattern; a gate structure surrounding the plurality of channel layers, and extending in a second direction that intersects the first direction; blocking insulating layers on both side surfaces of the gate structure, respectively, each of the blocking insulating layers having an upper region having a first thickness and a lower region having a second thickness smaller than the first thickness; source/drain patterns on portions of the active pattern on both sides of the gate structure, the source/drain patterns defining trenches therein; contact structures on the source/drain patterns and filling the trenches; and a metal-semiconductor compound layer between the source/drain patterns and the contact structures.

公开(公告)号：US20190043809A1

公开(公告)日：2019-02-07

申请号：US15909390

申请日：2018-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonhee KANG ,  Jiyoung Kim ,  Taejin Yim ,  Jongmin Baek ,  Sanghoon Ahn ,  Hyeoksang Oh ,  Kyu-Hee Han

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L23/53295 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/5329

Abstract: Embodiments of the present inventive concepts provide methods of forming an ultra-low-k dielectric layer and the ultra-low-k dielectric layer formed thereby. The method may include forming a first layer by supplying a precursor including silicon, oxygen, carbon, and hydrogen, performing a first ultraviolet process on the first layer to convert the first layer into a second layer, and performing a second ultraviolet process on the second layer under a process condition different from that of the first ultraviolet process.