公开(公告)号：US12272702B2

公开(公告)日：2025-04-08

申请号：US17546401

申请日：2021-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yujung Choi ,  Junho Seok ,  Munhwan Kim ,  Wonchul Choi

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor including first and second pixel groups, each of which includes first to ninth pixels arranged to form a 3×3 array is disclosed. The image sensor further includes first to ninth transfer transistors disposed in each of the pixel groups to correspond to the first to ninth pixels, respectively, each of the first to ninth transfer transistors including a transfer gate and a floating diffusion region, a selection transistor disposed in at least one of the fourth to sixth pixels in each of the pixel group, and source follower transistors respectively disposed in at least two pixels of the first to third and seventh to ninth pixels in each of the pixel groups. Source follower gates of the source follower transistors may be connected to the floating diffusion region of each of the first to ninth transfer transistors.

公开(公告)号：US11265496B2

公开(公告)日：2022-03-01

申请号：US17019954

申请日：2020-09-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Munhwan Kim ,  Jooyeong Gong ,  Youngsun Oh ,  Yujung Choi ,  Hana Choi

IPC: H04N5/374 ,  H04N9/04 ,  H01L27/146 ,  H04N5/369 ,  H04N5/378

Abstract: An image sensor may include a plurality of first pixels arranged on a substrate along a first axis and a second axis, the plurality of first pixels connected to a first output line, a plurality of second pixels arranged on the substrate along the first axis and the second axis, the plurality of second pixels being mirror-symmetric to the plurality of first pixels along the first axis, and the plurality of second pixels connected to the first output line, a plurality of first color filters, and a plurality of second color filters.

公开(公告)号：US09865635B2

公开(公告)日：2018-01-09

申请号：US15408085

申请日：2017-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghyuk Park ,  Seungwon Cha ,  Cheolju Kang ,  Yitae Kim ,  Jongeun Park ,  Jungchak Ahn ,  Yujung Choi

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

Abstract: An image sensor and a method of fabricating the same are disclosed. The image sensor may include a substrate including an active region defined by a device isolation layer, a photoelectric conversion layer, a well impurity layer, a floating diffusion region, and a transfer gate. When viewed in a plan view, a lower portion of the transfer gate may include a first surface in contact with the device isolation layer, a second surface substantially perpendicular to the first surface, and a third surface connected to the first and second surfaces. The third surface may face the floating diffusion region. A first portion of a gate insulating layer may be adjacent to the third surface and thinner than a portion adjacent to the first surface or the second surface, and this may facilitate more efficient transfer of an electron from the photoelectric conversion layer to the floating diffusion region.