公开(公告)号：US12043780B2

公开(公告)日：2024-07-23

申请号：US18070635

申请日：2022-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung Kwon ,  Seon-Yeong Kim ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Eun Joo Jang

IPC: C09K11/88 ,  C09K11/02 ,  F21V8/00 ,  H10K59/12 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/883 ,  C09K11/025 ,  G02B6/005 ,  H10K59/12 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot comprising zinc, tellurium, and selenium and not comprising cadmium, wherein a maximum luminescent peak of the quantum dot is present in a wavelength range of greater than about 470 nanometers (nm) and a quantum efficiency of the quantum dot is greater than or equal to about 10%, and wherein the quantum dot comprises a core comprising a first semiconductor nanocrystal and a semiconductor nanocrystal shell disposed on the core.

公开(公告)号：US11809040B2

公开(公告)日：2023-11-07

申请号：US17726033

申请日：2022-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Wook Kim ,  Soo Kyung Kwon ,  Jaeyong Lee

IPC: G02F1/1335 ,  G02F1/13357

CPC classification number: G02F1/133603 ,  G02F1/133514 ,  G02F1/133617

Abstract: A display device includes a display panel, a backlight unit, and a light conversion sheet between the display panel and the backlight unit. The backlight unit includes a substrate and light-emitting sections arranged on the substrate, one or more light sources are disposed in each of the light-emitting sections, the light conversion sheet includes first partition walls and light conversion sections arranged to correspond to the light-emitting sections, a first partition wall of the first partition walls is disposed between adjacent light conversion sections of the light conversion sections. Each of the light conversion sections includes first quantum dots emitting a first light and second quantum dots emitting a second light having a color different from a color of the first light, and the at least one light source provides light of a predetermined wavelength to the light conversion sheet.

公开(公告)号：US11692136B2

公开(公告)日：2023-07-04

申请号：US17072335

申请日：2020-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seon-Yeong Kim ,  Soo Kyung Kwon ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Jihyun Min ,  Sungwoo Hwang ,  Eun Joo Jang

IPC: C09K11/88 ,  C09K11/54 ,  C09K11/56 ,  C09K11/06 ,  C01G9/00 ,  C01G9/08 ,  H01L27/32 ,  G02F1/13357 ,  H10K59/38 ,  F21V8/00 ,  G02F1/1335

CPC classification number: C09K11/883 ,  C01G9/006 ,  C01G9/08 ,  C09K11/06 ,  C09K11/54 ,  C09K11/565 ,  G02F1/133621 ,  H10K59/38 ,  C01P2004/64 ,  C01P2004/90 ,  C01P2006/60 ,  G02B6/005 ,  G02F1/133614 ,  G02F2202/36

Abstract: A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.

公开(公告)号：US11603493B2

公开(公告)日：2023-03-14

申请号：US17072440

申请日：2020-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Sungwoo Hwang ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Soo Kyung Kwon ,  Seon-Yeong Kim

IPC: H01L29/08 ,  C09K11/88 ,  C01B19/00 ,  C01G9/08 ,  C09K11/56 ,  H01L27/32 ,  H01L51/50 ,  B82Y20/00 ,  B82Y40/00 ,  F21V8/00

Abstract: A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d5/2 as an area percentage is less than or equal to about 25%.

公开(公告)号：US09523882B2

公开(公告)日：2016-12-20

申请号：US14741918

申请日：2015-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Ho Jung ,  Hyun A Kang ,  Soo Kyung Kwon ,  Won Joo Lee ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun ,  Oul Cho ,  In Taek Han

IPC: G02F1/1335 ,  F21V8/00

CPC classification number: G02F1/1336 ,  G02B6/005 ,  G02F1/133615 ,  G02F2001/133614 ,  G02F2202/32 ,  G02F2202/36 ,  Y10T428/1036 ,  Y10T428/24612 ,  Y10T428/24802 ,  Y10T428/31507 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31565 ,  Y10T428/31587 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31797 ,  Y10T428/31862 ,  Y10T428/31913 ,  Y10T428/31917 ,  Y10T428/31938 ,  Y10T428/31942

Abstract: A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A1) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A2) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A3) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: A1

公开(公告)号：US09158149B2

公开(公告)日：2015-10-13

申请号：US13834209

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Ho Jung ,  Hyun A Kang ,  Soo Kyung Kwon ,  Won Joo Lee ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun ,  Oul Cho ,  In Taek Han

IPC: G02F1/1335

CPC classification number: G02F1/1336 ,  G02B6/005 ,  G02F1/133615 ,  G02F2001/133614 ,  G02F2202/32 ,  G02F2202/36 ,  Y10T428/1036 ,  Y10T428/24612 ,  Y10T428/24802 ,  Y10T428/31507 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31565 ,  Y10T428/31587 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31797 ,  Y10T428/31862 ,  Y10T428/31913 ,  Y10T428/31917 ,  Y10T428/31938 ,  Y10T428/31942

Abstract: A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A1) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A2) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A3) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: A1

Abstract translation: 一种用于背光单元的膜，其包括半导体纳米晶体的半导体纳米晶体 - 聚合物复合膜和分散有半导体纳米晶体的基质聚合物，其中基质聚合物是通过多官能光固化低聚物的聚合产生的聚合物， 单官能光固化性单体和多功能光固化性交联剂，所述多功能光固化性低聚物的酸值为约0.1mg KOH / g以下，酸值（A1）为 衍生自多功能光固化低聚物的第一结构单元，衍生自单官能光固化性单体的第二结构单元的含量（A2）和衍生自多功能光固化单体的第三结构单元的含量（A3） 可交联剂满足式1：A1 <（A2 + A3）。 公式1

公开(公告)号：US12065604B2

公开(公告)日：2024-08-20

申请号：US17502645

申请日：2021-10-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung Kwon ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Seon-Yeong Kim ,  Sungwoo Hwang

IPC: C09K11/02 ,  C09K11/88 ,  G02F1/13357 ,  H01L51/50 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/883 ,  C09K11/02 ,  G02F1/133617 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot composite that includes a matrix; and



a plurality of quantum dots and titanium oxide particles dispersed in the matrix, wherein the quantum dots include zinc, tellurium, and selenium, the quantum dots do not comprise cadmium, lead, mercury, or a combination thereof, and in the quantum dot composite, a weight ratio of tellurium with respect to titanium is greater than or equal to about 1.5:1 and less than or equal to about 10:1.

公开(公告)号：US11845888B2

公开(公告)日：2023-12-19

申请号：US17989035

申请日：2022-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Nayoun Won ,  Sungwoo Hwang ,  Eun Joo Jang ,  Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Garam Park ,  Shang Hyeun Park ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yong Seok Han

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88 ,  H05B33/14 ,  H10K50/115 ,  H10K59/38 ,  B82Y40/00 ,  B82Y20/00 ,  G02F1/1335

CPC classification number: C09K11/0883 ,  C08L57/10 ,  C09K11/025 ,  C09K11/565 ,  C09K11/70 ,  C09K11/883 ,  G02F1/133617 ,  H05B33/14 ,  H10K50/115 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00 ,  C08L2203/20 ,  G02F1/133614 ,  G02F2202/022 ,  G02F2202/102 ,  G02F2202/36

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.

公开(公告)号：US11718789B2

公开(公告)日：2023-08-08

申请号：US17503436

申请日：2021-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seon-Yeong Kim ,  Yong Wook Kim ,  Soo Kyung Kwon ,  Ji-Yeong Kim ,  Sungwoo Hwang

IPC: C09K11/88 ,  C01B19/04 ,  C01G9/00 ,  C09K11/70 ,  H10K50/115 ,  C09K11/74 ,  B82Y20/00 ,  B82Y40/00 ,  H10K102/00

CPC classification number: C09K11/883 ,  C01B19/04 ,  C01G9/006 ,  C09K11/70 ,  C09K11/703 ,  C09K11/7414 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00 ,  C01P2004/64 ,  C01P2006/60 ,  H10K2102/00

Abstract: A cadmium free quantum dot or a population thereof or a device including the same, wherein the cadmium free quantum dot includes a core (or a semiconductor nanocrystal particle) including a first semiconductor including a Group IIB-VI compound and a shell (or a coating) disposed on the core (or the semiconductor nanocrystal particle) including a Group IIB-V compound and exhibits a quantum efficiency of about 60% or higher.

公开(公告)号：US11634628B2

公开(公告)日：2023-04-25

申请号：US16519188

申请日：2019-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Seon-Yeong Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Soo Kyung Kwon ,  Yong Wook Kim

IPC: C09K11/62 ,  C09K11/70 ,  H01L29/12 ,  C09K11/88 ,  H01L27/32

Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.