公开(公告)号：US10115737B2

公开(公告)日：2018-10-30

申请号：US15893157

申请日：2018-02-09

Applicant: SanDisk Technologies LLC

Inventor： Hoon Cho ,  Jun Wan ,  Ching-Huang Lu

IPC: H01L27/11582 ,  H01L29/792 ,  H01L29/788 ,  H01L29/423 ,  H01L29/40 ,  H01L27/11556 ,  H01L21/28

Abstract: Disclosed herein is a non-volatile storage system with memory cells having a charge storage region that may be configured to store a higher density of charges (e.g., electrons) in the middle than nearer to the control gate or channel. The charge storage region has a middle charge storage material that stores a higher density of charges than two outer charge storage materials that are nearer to the control gate or channel, in one aspect. The charge storage region of one aspect has oxide regions between the middle charge storage material and the two outer charge storage materials. The oxide regions of one embodiment are thin (e.g., less than one nanometer) such that during operation charges may easily pass through the oxide regions. The non-volatile memory cell programs quickly and has high data retention.

公开(公告)号：US20180166463A1

公开(公告)日：2018-06-14

申请号：US15893157

申请日：2018-02-09

Applicant: SanDisk Technologies LLC

Inventor： Hoon Cho ,  Jun Wan ,  Ching-Huang Lu

IPC: H01L27/11582 ,  H01L29/792 ,  H01L29/788 ,  H01L29/423 ,  H01L29/40 ,  H01L27/11556

CPC classification number: H01L27/11582 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11556 ,  H01L29/408 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/42344 ,  H01L29/42348 ,  H01L29/788 ,  H01L29/792

Abstract: Disclosed herein is a non-volatile storage system with memory cells having a charge storage region that may be configured to store a higher density of charges (e.g., electrons) in the middle than nearer to the control gate or channel. The charge storage region has a middle charge storage material that stores a higher density of charges than two outer charge storage materials that are nearer to the control gate or channel, in one aspect. The charge storage region of one aspect has oxide regions between the middle charge storage material and the two outer charge storage materials. The oxide regions of one embodiment are thin (e.g., less than one nanometer) such that during operation charges may easily pass through the oxide regions. The non-volatile memory cell programs quickly and has high data retention.

公开(公告)号：US09899410B1

公开(公告)日：2018-02-20

申请号：US15376925

申请日：2016-12-13

Applicant: SanDisk Technologies LLC

Inventor： Hoon Cho ,  Jun Wan ,  Ching-Huang Lu

IPC: H01L29/792 ,  H01L31/119 ,  H01L27/11582 ,  H01L27/11556 ,  H01L29/40 ,  H01L29/423 ,  H01L29/788

CPC classification number: H01L27/11582 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11556 ,  H01L29/408 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/42344 ,  H01L29/42348 ,  H01L29/788 ,  H01L29/792

Abstract: Disclosed herein is a non-volatile storage system with memory cells having a charge storage region that may be configured to store a higher density of charges (e.g., electrons) in the middle than nearer to the control gate or channel. The charge storage region has a middle charge storage material that stores a higher density of charges than two outer charge storage materials that are nearer to the control gate or channel, in one aspect. The charge storage region of one aspect has oxide regions between the middle charge storage material and the two outer charge storage materials. The oxide regions of one embodiment are thin (e.g., less than one nanometer) such that during operation charges may easily pass through the oxide regions. The non-volatile memory cell programs quickly and has high data retention.