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1.发明授权Memories with memory arrays extending in opposite directions from a semiconductor and their formation 有权具有从半导体沿相反方向延伸的存储器阵列及其形成的存储器公开(公告)号：US08735902B2
公开(公告)日：2014-05-27
申请号：US12776965
申请日：2010-05-10
申请人： Sanh D. Tang , John Zahurak , Siddartha Kondoju , Haitao Liu , Nishant Sinha
发明人： Sanh D. Tang , John Zahurak , Siddartha Kondoju , Haitao Liu , Nishant Sinha
IPC分类号： H01L21/8239
CPC分类号： H01L27/11293 , H01L21/823885 , H01L27/0688 , H01L27/101 , H01L27/105 , H01L27/1052 , H01L27/11206 , H01L27/11517 , H01L27/11524 , H01L27/11551 , H01L27/11563 , H01L27/11578 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/792
摘要： Memories and their formation are disclosed. One such memory has a first array of first memory cells extending in a first direction from a first surface of a semiconductor. A second array of second memory cells extends in a second direction, opposite to the first direction, from a second surface of the semiconductor. Both arrays may be non-volatile memory arrays. For example, one of the memory arrays may be a NAND flash memory array, while the other may be a one-time-programmable memory array.
摘要翻译： 记忆及其形成被披露。 一个这样的存储器具有从半导体的第一表面沿第一方向延伸的第一存储单元阵列。 第二阵列的第二存储单元从与半导体的第二表面在第二方向相反的第二方向延伸。 两个阵列可以是非易失性存储器阵列。 例如，存储器阵列之一可以是NAND快闪存储器阵列，而另一个可以是一次可编程存储器阵列。
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公开(公告)号：US20110272754A1
公开(公告)日：2011-11-10
申请号：US12776965
申请日：2010-05-10
申请人： Sanh D. Tang , John Zahurak , Siddartha Kondoju , Haitao Liu , Nishant Sinha
发明人： Sanh D. Tang , John Zahurak , Siddartha Kondoju , Haitao Liu , Nishant Sinha
IPC分类号： H01L29/788 , H01L21/336 , H01L21/8229 , H01L21/76
CPC分类号： H01L27/11293 , H01L21/823885 , H01L27/0688 , H01L27/101 , H01L27/105 , H01L27/1052 , H01L27/11206 , H01L27/11517 , H01L27/11524 , H01L27/11551 , H01L27/11563 , H01L27/11578 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/792
摘要： Memories and their formation are disclosed. One such memory has a first array of first memory cells extending in a first direction from a first surface of a semiconductor. A second array of second memory cells extends in a second direction, opposite to the first direction, from a second surface of the semiconductor. Both arrays may be non-volatile memory arrays. For example, one of the memory arrays may be a NAND flash memory array, while the other may be a one-time-programmable memory array.
摘要翻译： 记忆及其形成被披露。 一个这样的存储器具有从半导体的第一表面沿第一方向延伸的第一存储单元阵列。 第二阵列的第二存储单元从与半导体的第二表面在第二方向相反的第二方向延伸。 两个阵列可以是非易失性存储器阵列。 例如，存储器阵列之一可以是NAND快闪存储器阵列，而另一个可以是一次可编程存储器阵列。
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3.发明授权Methods for removing photoresist defects and a method for processing a semiconductor device structure 有权去除光刻胶缺陷的方法和半导体器件结构的处理方法公开(公告)号：US08372754B2
公开(公告)日：2013-02-12
申请号：US11786306
申请日：2007-04-11
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , H01L21/0273 , H01L21/31144
摘要： A method for removing at least one photoresist defect is disclosed. The photoresist defect is exposed to a plasma produced from a source gas including oxygen and a non-oxidizing gas in a plasma reactor, wherein the oxygen is present in the source gas at from 1% by volume to about 89% by volume. The non-oxidizing gas includes a mixture of hydrogen and nitrogen, ammonia or combinations thereof. A method for processing a semiconductor device structure is also disclosed, as are embodiments of the source gas.
摘要翻译： 公开了一种去除至少一个光致抗蚀剂缺陷的方法。 在等离子体反应器中，光致抗蚀剂缺陷暴露于由包括氧和非氧化性气体的源气体产生的等离子体，其中氧气以1体积％至约89体积％存在于源气体中。 非氧化气体包括氢和氮的混合物，氨或其组合。 还公开了用于处理半导体器件结构的方法，如源气体的实施例。
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公开(公告)号：US20080254637A1
公开(公告)日：2008-10-16
申请号：US11786306
申请日：2007-04-11
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , H01L21/0273 , H01L21/31144
摘要： A method for removing at least one photoresist defect is disclosed. The photoresist defect is exposed to a plasma produced from a source gas including oxygen and a non-oxidizing gas in a plasma reactor, wherein the oxygen is present in the source gas at from 1% by volume to about 89% by volume. The non-oxidizing gas includes a mixture of hydrogen and nitrogen, ammonia or combinations thereof. A method for processing a semiconductor device structure is also disclosed, as are embodiments of the source gas.
摘要翻译： 公开了一种去除至少一个光致抗蚀剂缺陷的方法。 在等离子体反应器中，光致抗蚀剂缺陷暴露于由包括氧和非氧化性气体的源气体产生的等离子体，其中氧气以1体积％至约89体积％存在于源气体中。 非氧化气体包括氢和氮的混合物，氨或其组合。 还公开了用于处理半导体器件结构的方法，如源气体的实施例。
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