Abstract:
A data storage device may be configured at least with a magnetic stack that contacts a magnetic shield. The magnetic stack can be disposed between first and second side shields and having at least one layer constructed of a CoFeNiB material. The magnetic shield may have a synthetic antiferromagnet with a non-magnetic layer disposed between first and second ferromagnetic layers.
Abstract:
A data reader may have a magnetoresistive stack consisting of at least magnetically free and magnetically fixed structures. The magnetically fixed structure can be set to a first magnetization direction by a first pinning structure separated from an air bearing surface by a front shield portion of a magnetic shield. The front shield portion may be set to a different second magnetization direction by a second pinning structure.
Abstract:
A data storage system may be configured at least with a seed lamination that is disposed between a magnetic stack and a magnetic shield. The seed lamination may be constructed and operated with a coupling buffer layer and a seed layer with the coupling buffer layer fabricated of an alloy of cobalt and a transition metal.
Abstract:
A data reader may have a magnetoresistive stack consisting of at least magnetically free and magnetically fixed structures. The magnetically fixed structure can be set to a first magnetization direction by a first pinning structure separated from an air bearing surface by a front shield portion of a magnetic shield. The front shield portion may be set to a different second magnetization direction by a second pinning structure.
Abstract:
A data reader may have a magnetoresistive stack consisting of at least magnetically free and magnetically fixed structures. The magnetically fixed structure can be set to a first magnetization direction by a first pinning structure separated from an air bearing surface by a front shield portion of a magnetic shield. The front shield portion may be set to a different second magnetization direction by a second pinning structure.
Abstract:
A magnetic sensor may generally be configured as a data reader capable of sensing data bits from an adjacent data storage medium. Various embodiments of a magnetic element may have at least a magnetic stack that contacts at least a first shield. The first shield can have at least one synthetic antiferromagnetic structure (SAFS) that is pinned by a high-coercivity ferromagnetic (HCFM) layer.
Abstract:
A magnetic sensor may generally be configured as a data reader capable of sensing data bits from an adjacent data storage medium. Various embodiments of a magnetic element may have at least a magnetic stack that contacts at least a first shield. The first shield can have at least one synthetic antiferromagnetic structure (SAFS) that is pinned by a high-coercivity ferromagnetic (HCFM) layer.
Abstract:
A data reader can be configured with at least a magnetoresistive stack contacting one or more magnetic shields. The magnetoresistive stack can be separated from a magnetic shield by a seed lamination on an air bearing surface with the seed lamination consisting of at least three sub-layers that are constructed with different material compositions.
Abstract:
A data reader may have a magnetoresistive stack positioned on an air bearing surface and consisting of at least a magnetically free structure that continuously extends from the air bearing surface with a first stripe height. A side shield can be separated from the magnetoresistive stack on the ABS and configured with a first magnetic layer having the first stripe height and a second magnetic layer having a third stripe height from the air bearing surface with the third stripe height being greater than the first stripe height. The side shield can be anti-ferromagnetically biased by a synthetic antiferromagnetic top shield structure that contacts the side shield through a transition metal material layer. The first stripe height can be configured to match a magnetically free layer of the magnetoresistive stack and the second stripe height can be configured to match a magnetically fixed layer of the magnetoresistive stack.
Abstract:
A data storage device may be configured at least with a magnetic stack that contacts a magnetic shield. The magnetic stack can be disposed between first and second side shields and having at least one layer constructed of a CoFeNiB material. The magnetic shield may have a synthetic antiferromagnet with a non-magnetic layer disposed between first and second ferromagnetic layers.