公开(公告)号：US20130188419A1

公开(公告)日：2013-07-25

申请号：US13785525

申请日：2013-03-05

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

IPC: G11C11/16

CPC classification number: G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line. The giant magnetoresistance cell includes a free magnetic layer. A magnetic tunnel junction data cell is electrically coupled between a read bit line and a read source line. The magnetic tunnel junction data cell includes the free magnetic layer. A write current passes through the giant magnetoresistance cell to switche the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell, and be read by a read current passing though the magnetic tunnel junction data cell.

Abstract translation: 存储单元包括电耦合在写位线和写入源线之间的巨磁电阻单元。 巨磁电阻单元包括自由磁性层。 磁性隧道结数据单元电耦合在读取位线和读取源极线之间。 磁性隧道结数据单元包括自由磁性层。 写入电流通过巨磁电阻单元，以在高电阻状态和低电阻状态之间切换巨磁电阻单元。 磁隧道结数据单元被配置为通过与巨磁电阻单元的静磁耦合在高电阻状态和低电阻状态之间切换，并且通过通过磁性隧道结数据单元的读取电流来读取。

公开(公告)号：US08711608B2

公开(公告)日：2014-04-29

申请号：US13785525

申请日：2013-03-05

Applicant: Seagate Technology LLC

Inventor： Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

IPC: G11C11/00

CPC classification number: G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line. The giant magnetoresistance cell includes a free magnetic layer. A magnetic tunnel junction data cell is electrically coupled between a read bit line and a read source line. The magnetic tunnel junction data cell includes the free magnetic layer. A write current passes through the giant magnetoresistance cell to switch the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell, and be read by a read current passing though the magnetic tunnel junction data cell.

Abstract translation: 存储单元包括电耦合在写位线和写入源线之间的巨磁电阻单元。 巨磁电阻单元包括自由磁性层。 磁性隧道结数据单元电耦合在读取位线和读取源极线之间。 磁性隧道结数据单元包括自由磁性层。 写入电流通过巨磁电阻单元，以将巨磁阻单元切换到高电阻状态和低电阻状态之间。 磁隧道结数据单元被配置为通过与巨磁电阻单元的静磁耦合在高电阻状态和低电阻状态之间切换，并且通过通过磁性隧道结数据单元的读取电流来读取。