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    MEMORY WITH SEPARATE READ AND WRITE PATHS
    1.
    发明申请
    MEMORY WITH SEPARATE READ AND WRITE PATHS 有权
    具有单独读取和写入数据的存储器

    公开(公告)号：US20130188419A1

    公开(公告)日：2013-07-25

    申请号：US13785525

    申请日：2013-03-05

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

    IPC: G11C11/16

    CPC classification number: G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    Abstract: A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line. The giant magnetoresistance cell includes a free magnetic layer. A magnetic tunnel junction data cell is electrically coupled between a read bit line and a read source line. The magnetic tunnel junction data cell includes the free magnetic layer. A write current passes through the giant magnetoresistance cell to switche the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell, and be read by a read current passing though the magnetic tunnel junction data cell.

    Abstract translation: 存储单元包括电耦合在写位线和写入源线之间的巨磁电阻单元。 巨磁电阻单元包括自由磁性层。 磁性隧道结数据单元电耦合在读取位线和读取源极线之间。 磁性隧道结数据单元包括自由磁性层。 写入电流通过巨磁电阻单元，以在高电阻状态和低电阻状态之间切换巨磁电阻单元。 磁隧道结数据单元被配置为通过与巨磁电阻单元的静磁耦合在高电阻状态和低电阻状态之间切换，并且通过通过磁性隧道结数据单元的读取电流来读取。

    MAGNETIC SENSING DEVICE WITH REDUCED SHIELD-TO-SHIELD SPACING
    2.
    发明申请
    MAGNETIC SENSING DEVICE WITH REDUCED SHIELD-TO-SHIELD SPACING 审中-公开
    具有减小的屏蔽到屏蔽间隔的磁感测装置

    公开(公告)号：US20160356861A1

    公开(公告)日：2016-12-08

    申请号：US15238354

    申请日：2016-08-16

    Applicant: Seagate Technology, LLC

    Inventor： Eric W. Singleton ,  Qing He ,  Jae-Young Yi ,  Matt Johnson ,  Zheng Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

    IPC: G01R33/00 ,  G01R33/09

    CPC classification number: G01R33/0052 ,  B82Y25/00 ,  G01R33/0076 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912 ,  G11B5/398

    Abstract: A magnetic sensor assembly includes first and second shields each comprised of a magnetic material. The first and second shields define a physical shield-to-shield spacing. A sensor stack is disposed between the first and second shields and includes a seed layer adjacent the first shield, a cap :layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer. At least a portion of the seed layer and/or the cap layer comprises a magnetic material to provide an effective shield-to-shield spacing of the magnetic sensor assembly that is less than the physical shield-to-shield spacing.

    Abstract translation: 磁传感器组件包括由磁性材料构成的第一和第二屏蔽件。 第一和第二屏蔽层定义物理屏蔽间隔。 传感器堆叠设置在第一和第二屏蔽之间，并且包括邻近第一屏蔽的种子层，与第二屏蔽相邻的盖：层和种子层与盖层之间的磁传感器。 种子层和/或盖层的至少一部分包括磁性材料，以提供小于物理屏蔽 - 屏蔽间隔的磁性传感器组件的有效的屏蔽到屏蔽间隔。

    Memory with separate read and write paths
    3.
    发明授权
    Memory with separate read and write paths 有权
    内存具有单独的读写路径

    公开(公告)号：US08711608B2

    公开(公告)日：2014-04-29

    申请号：US13785525

    申请日：2013-03-05

    Applicant: Seagate Technology LLC

    Inventor： Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

    IPC: G11C11/00

    CPC classification number: G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    Abstract: A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line. The giant magnetoresistance cell includes a free magnetic layer. A magnetic tunnel junction data cell is electrically coupled between a read bit line and a read source line. The magnetic tunnel junction data cell includes the free magnetic layer. A write current passes through the giant magnetoresistance cell to switch the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell, and be read by a read current passing though the magnetic tunnel junction data cell.

    Abstract translation: 存储单元包括电耦合在写位线和写入源线之间的巨磁电阻单元。 巨磁电阻单元包括自由磁性层。 磁性隧道结数据单元电耦合在读取位线和读取源极线之间。 磁性隧道结数据单元包括自由磁性层。 写入电流通过巨磁电阻单元，以将巨磁阻单元切换到高电阻状态和低电阻状态之间。 磁隧道结数据单元被配置为通过与巨磁电阻单元的静磁耦合在高电阻状态和低电阻状态之间切换，并且通过通过磁性隧道结数据单元的读取电流来读取。

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