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公开(公告)号：US09805756B2
公开(公告)日：2017-10-31
申请号：US15202373
申请日：2016-07-05
Applicant: Seagate Technology LLC
Inventor： Yi Liu , Aaron M. Bowser , Dan Yu , Xiaohong Zhang
CPC classification number: G11B5/8404 , C09K13/00 , C23F1/02 , C23F4/04 , G03F7/20 , G03F9/708 , G11B5/314 , G11B5/855 , H01L2223/54426
Abstract: Implementations disclosed herein provide a method of reducing the topography at the alignment and overlay marks area during the writer pole photolithography process in order to reduce the wafer scale variation and reduce the writer pole photolithography process rework rate. In one implementation, an intermediate stage of a wafer for writer pole formation is generated by removing a part of at least one metallic writer pole layer on top of an intermediate stage writer pole wafer to form a recovery trench, depositing an optically transparent material on top of the wafer, wherein the thickness of the optically transparent material is higher than a target recovery trench topography, forming a photoresist pattern on top of the optically transparent material over the recovery trench, etching the optically transparent material, and removing the photoresist pattern and at least part of the remaining optically transparent material.
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公开(公告)号：US09640204B2
公开(公告)日：2017-05-02
申请号：US15338729
申请日：2016-10-31
Applicant: Seagate Technology LLC
Inventor： Xiaohong Zhang , Wei Tian , Zhe Shen , Dong Lin , Joseph Mundenar
CPC classification number: G11B5/3912 , G11B5/11 , G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B5/3163
Abstract: Implementations disclosed herein provide an apparatus comprising a write pole, and a two-layer front shield formed on the write pole, the front shield comprising, a first dielectric material formed on the first layer of the front shield, an active shield control (ASC) device formed between the two layers of the front shield on the first dielectric material configured to synchronize the response to a magnetomotive force (MMF) of a write pole and the front shield, and a second dielectric material formed on the ASC device, wherein the second layer of the front shield is formed only on top of the second dielectric material and the first layer of the front shield.
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Patent Agency Ranking
公开(公告)号：US20160314810A1
公开(公告)日：2016-10-27
申请号：US15202373
申请日：2016-07-05
Applicant: Seagate Technology LLC
Inventor： Yi Liu , Aaron M. Bowser , Dan Yu , Xiaohong Zhang
CPC classification number: G11B5/8404 , C09K13/00 , C23F1/02 , C23F4/04 , G03F7/20 , G03F9/708 , G11B5/314 , G11B5/855 , H01L2223/54426
Abstract: Implementations disclosed herein provide a method of reducing the topography at the alignment and overlay marks area during the writer pole photolithography process in order to reduce the wafer scale variation and reduce the writer pole photolithography process rework rate. In one implementation, an intermediate stage of a wafer for writer pole formation is generated by removing a part of at least one metallic writer pole layer on top of an intermediate stage writer pole wafer to form a recovery trench, depositing an optically transparent material on top of the wafer, wherein the thickness of the optically transparent material is higher than a target recovery trench topography, forming a photoresist pattern on top of the optically transparent material over the recovery trench, etching the optically transparent material, and removing the photoresist pattern and at least part of the remaining optically transparent material.
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公开(公告)号：US20170092306A1
公开(公告)日：2017-03-30
申请号：US15338729
申请日：2016-10-31
Applicant: Seagate Technology LLC
Inventor： Xiaohong Zhang , Wei Tian , Zhe Shen , Dong Lin , Joseph Mundenar
IPC: G11B5/39
CPC classification number: G11B5/3912 , G11B5/11 , G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B5/3163
Abstract: Implementations disclosed herein provide an apparatus comprising a write pole, and a two-layer front shield formed on the write pole, the front shield comprising, a first dielectric material formed on the first layer of the front shield, an active shield control (ASC) device formed between the two layers of the front shield on the first dielectric material configured to synchronize the response to a magnetomotive force (MMF) of a write pole and the front shield, and a second dielectric material formed on the ASC device, wherein the second layer of the front shield is formed only on top of the second dielectric material and the first layer of the front shield.
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公开(公告)号：US09411234B2
公开(公告)日：2016-08-09
申请号：US14503589
申请日：2014-10-01
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Yi Liu , Aaron M. Bowser , Dan Yu , Xiaohong Zhang
CPC classification number: G11B5/8404 , C09K13/00 , C23F1/02 , C23F4/04 , G03F7/20 , G03F9/708 , G11B5/314 , G11B5/855 , H01L2223/54426
Abstract: Implementations disclosed herein provide a method of reducing the topography at the alignment and overlay marks area during the writer pole photolithography process in order to reduce the wafer scale variation and reduce the writer pole photolithography process rework rate. In one implementation, an intermediate stage of a wafer for writer pole formation is generated by removing a part of at least one metallic writer pole layer on top of an intermediate stage writer pole wafer to form a recovery trench, depositing an optically transparent material on top of the wafer, wherein the thickness of the optically transparent material is higher than a target recovery trench topography, forming a photoresist pattern on top of the optically transparent material over the recovery trench, etching the optically transparent material, and removing the photoresist pattern and at least part of the remaining optically transparent material.
Abstract translation: 本文公开的实施方案提供了一种在写入极光刻工艺期间减小对准和重叠标记区域的形貌以减少晶片尺度变化并降低写入器极光刻工艺返工率的方法。 在一个实现中，通过去除中间级写入极晶片顶部上的至少一个金属写入极层的一部分来形成用于写入极形成的晶片的中间阶段，以形成恢复沟槽，在顶部沉积光学透明材料 ，其中所述光学透明材料的厚度高于目标恢复沟槽形貌，在所述光学透明材料的顶部上在所述恢复沟槽上形成光致抗蚀剂图案，蚀刻所述光学透明材料，以及去除所述光致抗蚀剂图案并且在 剩余的光学透明材料的最少部分。
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公开(公告)号：US09495979B1
公开(公告)日：2016-11-15
申请号：US14871597
申请日：2015-09-30
Applicant: Seagate Technology LLC
Inventor： Xiaohong Zhang , Wei Tian , Zhe Shen , Dong Lin , Joseph Mundenar
CPC classification number: G11B5/3912 , G11B5/11 , G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B5/3163
Abstract: Implementations disclosed herein provide a method of forming a first layer of a front shield in a magnetic recording head, depositing an active shield control (ASC) device on the first layer, and forming a second layer of the front shield on top of the ASC device and the first layer of the front shield. In another implementation, an apparatus includes a write pole, and a two layer front shield formed on the write pole, including an ASC device between the two layers of the front shield.
Abstract translation: 本文公开的实施方案提供了一种在磁记录头中形成前屏蔽的第一层的方法，在第一层上沉积主动屏蔽控制（ASC）装置，以及在ASC装置的顶部上形成前屏蔽的第二层 和前盾的第一层。 在另一个实施方式中，一种装置包括一个写入极和形成在写入极上的两层前屏蔽，其中包括在前屏蔽层的两层之间的ASC装置。
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公开(公告)号：US20160099019A1
公开(公告)日：2016-04-07
申请号：US14503589
申请日：2014-10-01
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Yi Liu , Aaron M. Bowser , Dan Yu , Xiaohong Zhang
CPC classification number: G11B5/8404 , C09K13/00 , C23F1/02 , C23F4/04 , G03F7/20 , G03F9/708 , G11B5/314 , G11B5/855 , H01L2223/54426
Abstract: Implementations disclosed herein provide a method of reducing the topography at the alignment and overlay marks area during the writer pole photolithography process in order to reduce the wafer scale variation and reduce the writer pole photolithography process rework rate. In one implementation, an intermediate stage of a wafer for writer pole formation is generated by removing a part of at least one metallic writer pole layer on top of an intermediate stage writer pole wafer to form a recovery trench, depositing an optically transparent material on top of the wafer, wherein the thickness of the optically transparent material is higher than a target recovery trench topography, forming a photoresist pattern on top of the optically transparent material over the recovery trench, etching the optically transparent material, and removing the photoresist pattern and at least part of the remaining optically transparent material.
Abstract translation: 本文公开的实施方案提供了一种在写入极光刻工艺期间减小对准和重叠标记区域的形貌以减少晶片尺度变化并降低写入器极光刻工艺返工率的方法。 在一个实现中，通过去除中间级写入极晶片顶部上的至少一个金属写入极层的一部分来形成用于写入极形成的晶片的中间阶段，以形成恢复沟槽，在顶部沉积光学透明材料 ，其中所述光学透明材料的厚度高于目标恢复沟槽形貌，在所述光学透明材料的顶部上在所述恢复沟槽上形成光致抗蚀剂图案，蚀刻所述光学透明材料，以及去除所述光致抗蚀剂图案并且在 剩余的光学透明材料的最少部分。
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