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公开(公告)号：US09805756B2
公开(公告)日：2017-10-31
申请号：US15202373
申请日：2016-07-05
Applicant: Seagate Technology LLC
Inventor： Yi Liu , Aaron M. Bowser , Dan Yu , Xiaohong Zhang
CPC classification number: G11B5/8404 , C09K13/00 , C23F1/02 , C23F4/04 , G03F7/20 , G03F9/708 , G11B5/314 , G11B5/855 , H01L2223/54426
Abstract: Implementations disclosed herein provide a method of reducing the topography at the alignment and overlay marks area during the writer pole photolithography process in order to reduce the wafer scale variation and reduce the writer pole photolithography process rework rate. In one implementation, an intermediate stage of a wafer for writer pole formation is generated by removing a part of at least one metallic writer pole layer on top of an intermediate stage writer pole wafer to form a recovery trench, depositing an optically transparent material on top of the wafer, wherein the thickness of the optically transparent material is higher than a target recovery trench topography, forming a photoresist pattern on top of the optically transparent material over the recovery trench, etching the optically transparent material, and removing the photoresist pattern and at least part of the remaining optically transparent material.
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公开(公告)号：US09482965B2
公开(公告)日：2016-11-01
申请号：US15144368
申请日：2016-05-02
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Dan Yu , Aaron Bowser , Yi Liu
CPC classification number: G03F7/70633 , G03F1/30 , G03F1/70 , G03F7/20 , G03F7/70558 , G03F7/70625 , G03F9/7007
Abstract: Implementations described and claimed herein include photolithography technology to alleviate the imbalance of transmission intensity induced. In one implementation, a method comprises exposing an alternating phase shift mask (Alt-PSM) and a trim mask, wherein an exposure placement of the trim mask is shifted relative to an exposure placement of the Alt-PSM.
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公开(公告)号：US20160246183A1
公开(公告)日：2016-08-25
申请号：US15144368
申请日：2016-05-02
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Dan Yu , Aaron Bowser , Yi Liu
IPC: G03F7/20
CPC classification number: G03F7/70633 , G03F1/30 , G03F1/70 , G03F7/20 , G03F7/70558 , G03F7/70625 , G03F9/7007
Abstract: Implementations described and claimed herein include photolithography technology to alleviate the imbalance of transmission intensity induced. In one implementation, a method comprises exposing an alternating phase shift mask (Alt-PSM) and a trim mask, wherein an exposure placement of the trim mask is shifted relative to an exposure placement of the Alt-PSM.
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公开(公告)号：US20160314810A1
公开(公告)日：2016-10-27
申请号：US15202373
申请日：2016-07-05
Applicant: Seagate Technology LLC
Inventor： Yi Liu , Aaron M. Bowser , Dan Yu , Xiaohong Zhang
CPC classification number: G11B5/8404 , C09K13/00 , C23F1/02 , C23F4/04 , G03F7/20 , G03F9/708 , G11B5/314 , G11B5/855 , H01L2223/54426
Abstract: Implementations disclosed herein provide a method of reducing the topography at the alignment and overlay marks area during the writer pole photolithography process in order to reduce the wafer scale variation and reduce the writer pole photolithography process rework rate. In one implementation, an intermediate stage of a wafer for writer pole formation is generated by removing a part of at least one metallic writer pole layer on top of an intermediate stage writer pole wafer to form a recovery trench, depositing an optically transparent material on top of the wafer, wherein the thickness of the optically transparent material is higher than a target recovery trench topography, forming a photoresist pattern on top of the optically transparent material over the recovery trench, etching the optically transparent material, and removing the photoresist pattern and at least part of the remaining optically transparent material.
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公开(公告)号：US09411234B2
公开(公告)日：2016-08-09
申请号：US14503589
申请日：2014-10-01
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Yi Liu , Aaron M. Bowser , Dan Yu , Xiaohong Zhang
CPC classification number: G11B5/8404 , C09K13/00 , C23F1/02 , C23F4/04 , G03F7/20 , G03F9/708 , G11B5/314 , G11B5/855 , H01L2223/54426
Abstract: Implementations disclosed herein provide a method of reducing the topography at the alignment and overlay marks area during the writer pole photolithography process in order to reduce the wafer scale variation and reduce the writer pole photolithography process rework rate. In one implementation, an intermediate stage of a wafer for writer pole formation is generated by removing a part of at least one metallic writer pole layer on top of an intermediate stage writer pole wafer to form a recovery trench, depositing an optically transparent material on top of the wafer, wherein the thickness of the optically transparent material is higher than a target recovery trench topography, forming a photoresist pattern on top of the optically transparent material over the recovery trench, etching the optically transparent material, and removing the photoresist pattern and at least part of the remaining optically transparent material.
Abstract translation: 本文公开的实施方案提供了一种在写入极光刻工艺期间减小对准和重叠标记区域的形貌以减少晶片尺度变化并降低写入器极光刻工艺返工率的方法。 在一个实现中，通过去除中间级写入极晶片顶部上的至少一个金属写入极层的一部分来形成用于写入极形成的晶片的中间阶段，以形成恢复沟槽，在顶部沉积光学透明材料 ，其中所述光学透明材料的厚度高于目标恢复沟槽形貌，在所述光学透明材料的顶部上在所述恢复沟槽上形成光致抗蚀剂图案，蚀刻所述光学透明材料，以及去除所述光致抗蚀剂图案并且在 剩余的光学透明材料的最少部分。
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Patent Agency Ranking
公开(公告)号：US20160124299A1
公开(公告)日：2016-05-05
申请号：US14528174
申请日：2014-10-30
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Dan Yu , Aaron Bowser , Yi Liu
CPC classification number: G03F7/70633 , G03F1/30 , G03F1/70 , G03F7/20 , G03F7/70558 , G03F7/70625 , G03F9/7007
Abstract: Implementations described and claimed herein include photolithography technology to alleviate the imbalance of transmission intensity induced. In one implementation, a method comprises exposing an alternating phase shift mask (Alt-PSM) and a trim mask, wherein an exposure placement of the trim mask is shifted relative to an exposure placement of the Alt-PSM.
Abstract translation: 本文描述和要求保护的实施方案包括光刻技术以减轻所引起的传输强度的不平衡。 在一个实现中，一种方法包括曝光交替相移掩模（Alt-PSM）和修剪蒙版，其中修剪蒙版的曝光位置相对于Alt-PSM的曝光位置移动。
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公开(公告)号：US20160099019A1
公开(公告)日：2016-04-07
申请号：US14503589
申请日：2014-10-01
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Yi Liu , Aaron M. Bowser , Dan Yu , Xiaohong Zhang
CPC classification number: G11B5/8404 , C09K13/00 , C23F1/02 , C23F4/04 , G03F7/20 , G03F9/708 , G11B5/314 , G11B5/855 , H01L2223/54426
Abstract: Implementations disclosed herein provide a method of reducing the topography at the alignment and overlay marks area during the writer pole photolithography process in order to reduce the wafer scale variation and reduce the writer pole photolithography process rework rate. In one implementation, an intermediate stage of a wafer for writer pole formation is generated by removing a part of at least one metallic writer pole layer on top of an intermediate stage writer pole wafer to form a recovery trench, depositing an optically transparent material on top of the wafer, wherein the thickness of the optically transparent material is higher than a target recovery trench topography, forming a photoresist pattern on top of the optically transparent material over the recovery trench, etching the optically transparent material, and removing the photoresist pattern and at least part of the remaining optically transparent material.
Abstract translation: 本文公开的实施方案提供了一种在写入极光刻工艺期间减小对准和重叠标记区域的形貌以减少晶片尺度变化并降低写入器极光刻工艺返工率的方法。 在一个实现中，通过去除中间级写入极晶片顶部上的至少一个金属写入极层的一部分来形成用于写入极形成的晶片的中间阶段，以形成恢复沟槽，在顶部沉积光学透明材料 ，其中所述光学透明材料的厚度高于目标恢复沟槽形貌，在所述光学透明材料的顶部上在所述恢复沟槽上形成光致抗蚀剂图案，蚀刻所述光学透明材料，以及去除所述光致抗蚀剂图案并且在 剩余的光学透明材料的最少部分。
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公开(公告)号：US11635679B1
公开(公告)日：2023-04-25
申请号：US17032358
申请日：2020-09-25
Applicant: Seagate Technology LLC
Inventor： Dan Yu , Aaron Michael Bowser
IPC: G03F1/30
Abstract: An alternating phase-shifting mask (Alt-PSM) comprising a 0° phase portion having a first width and a 180° phase portion having a second width greater than the first width. Example differences between the width of the 180° phase portion and the 0° phase portion may be 10 nm, 15 nm, or 20 nm. An Alt-PSM having phase portions of different widths can have an aerial image intensity transmission graph that is symmetric, for example, at 0.2-0.3 intensity.
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公开(公告)号：US10859903B1
公开(公告)日：2020-12-08
申请号：US15843451
申请日：2017-12-15
Applicant: Seagate Technology LLC
Inventor： Dan Yu , Aaron Michael Bowser
IPC: G03F1/30
Abstract: An alternating phase-shifting mask (Alt-PSM) comprising a 0° phase portion having a first width and a 180° phase portion having a second width greater than the first width. Example differences between the width of the 180° phase portion and the 0° phase portion may be 10 nm, 15 nm, or 20 nm. An Alt-PSM having phase portions of different widths can have an aerial image intensity transmission graph that is symmetric, for example, at 0.2-0.3 intensity.
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公开(公告)号：US09341939B1
公开(公告)日：2016-05-17
申请号：US14528174
申请日：2014-10-30
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Dan Yu , Aaron Bowser , Yi Liu
CPC classification number: G03F7/70633 , G03F1/30 , G03F1/70 , G03F7/20 , G03F7/70558 , G03F7/70625 , G03F9/7007
Abstract: Implementations described and claimed herein include photolithography technology to alleviate the imbalance of transmission intensity induced. In one implementation, a method comprises exposing an alternating phase shift mask (Alt-PSM) and a trim mask, wherein an exposure placement of the trim mask is shifted relative to an exposure placement of the Alt-PSM.
Abstract translation: 本文描述和要求保护的实施方案包括光刻技术以减轻所引起的传输强度的不平衡。 在一个实现中，一种方法包括曝光交替相移掩模（Alt-PSM）和修剪蒙版，其中修剪蒙版的曝光位置相对于Alt-PSM的曝光位置移动。
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