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公开(公告)号：US09034733B2
公开(公告)日：2015-05-19
申请号：US14159648
申请日：2014-01-21
CPC分类号： H01L21/02076 , H01L21/3043 , H01L21/3046 , H01L21/3065 , H01L21/67028 , H01L21/6836 , H01L21/78 , H01L21/7813 , H01L23/544 , H01L2221/68327 , H01L2223/5446
摘要： In one embodiment, semiconductor die are singulated from a semiconductor wafer having a backmetal layer by placing the semiconductor wafer onto a carrier tape with the backmetal layer adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the backmetal layer within the singulation lines, and separating portions of the backmetal layer within the singulation lines using a pressurized fluid applied to the carrier tape.
摘要翻译： 在一个实施例中，通过将半导体晶片放置在载体带上，背衬层与载带相邻，将半导体晶片从具有背金属层的半导体晶片分离，通过半导体晶片形成分割线，以暴露分离线内的后金属层 并且使用施加到载带上的加压流体将分离线内的后金属层的部分分离。
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公开(公告)号：US09847219B2
公开(公告)日：2017-12-19
申请号：US15267488
申请日：2016-09-16
IPC分类号： H01L21/78 , H01L21/304 , H01L21/02 , H01L21/67 , H01L21/3065 , H01L21/683 , H01L23/544
CPC分类号： H01L21/02076 , H01L21/3043 , H01L21/3046 , H01L21/3065 , H01L21/67028 , H01L21/6836 , H01L21/78 , H01L21/7813 , H01L23/544 , H01L2221/68327 , H01L2223/5446
摘要： In one embodiment, semiconductor die are singulated from a semiconductor wafer having a layer of material by placing the semiconductor wafer onto a carrier tape with the layer of material adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the layer of material within the singulation lines, and separating portions of the layer of material using a fluid.
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公开(公告)号：US20140134828A1
公开(公告)日：2014-05-15
申请号：US14159648
申请日：2014-01-21
IPC分类号： H01L21/78
CPC分类号： H01L21/02076 , H01L21/3043 , H01L21/3046 , H01L21/3065 , H01L21/67028 , H01L21/6836 , H01L21/78 , H01L21/7813 , H01L23/544 , H01L2221/68327 , H01L2223/5446
摘要： In one embodiment, semiconductor die are singulated from a semiconductor wafer having a backmetal layer by placing the semiconductor wafer onto a carrier tape with the backmetal layer adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the backmetal layer within the singulation lines, and separating portions of the backmetal layer within the singulation lines using a pressurized fluid applied to the carrier tape.
摘要翻译： 在一个实施例中，通过将半导体晶片放置在载体带上，背衬层与载带相邻，将半导体晶片从具有背金属层的半导体晶片分离，通过半导体晶片形成分割线，以暴露分离线内的后金属层 并且使用施加到载带上的加压流体将分离线内的后金属层的部分分离。
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公开(公告)号：US09484210B2
公开(公告)日：2016-11-01
申请号：US14690972
申请日：2015-04-20
IPC分类号： H01L21/78 , H01L21/304 , H01L21/3065 , H01L21/02 , H01L21/67
CPC分类号： H01L21/02076 , H01L21/3043 , H01L21/3046 , H01L21/3065 , H01L21/67028 , H01L21/6836 , H01L21/78 , H01L21/7813 , H01L23/544 , H01L2221/68327 , H01L2223/5446
摘要： In one embodiment, semiconductor die are singulated from a semiconductor wafer having a backmetal layer by placing the semiconductor wafer onto a carrier tape with the backmetal layer adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the backmetal layer within the singulation lines, and separating portions of the backmetal layer using a fluid.
摘要翻译： 在一个实施例中，通过将半导体晶片放置在载体带上，背衬层与载带相邻，将半导体晶片从具有背金属层的半导体晶片分离，通过半导体晶片形成分割线，以暴露分离线内的后金属层 并且使用流体分离后金属层的部分。
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公开(公告)号：US20150228494A1
公开(公告)日：2015-08-13
申请号：US14690972
申请日：2015-04-20
IPC分类号： H01L21/304 , H01L21/3065 , H01L21/78
CPC分类号： H01L21/02076 , H01L21/3043 , H01L21/3046 , H01L21/3065 , H01L21/67028 , H01L21/6836 , H01L21/78 , H01L21/7813 , H01L23/544 , H01L2221/68327 , H01L2223/5446
摘要： In one embodiment, semiconductor die are singulated from a semiconductor wafer having a backmetal layer by placing the semiconductor wafer onto a carrier tape with the backmetal layer adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the backmetal layer within the singulation lines, and separating portions of the backmetal layer using a fluid.
摘要翻译： 在一个实施例中，通过将半导体晶片放置在载体带上，背衬层与载带相邻，将半导体晶片从具有背金属层的半导体晶片分离，通过半导体晶片形成分割线，以暴露分离线内的后金属层 并且使用流体分离后金属层的部分。
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