公开(公告)号：US20170309750A1

公开(公告)日：2017-10-26

申请号：US15644940

申请日：2017-07-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiyuki KOBAYASHI ,  Shinpei MATSUDA ,  Daisuke MATSUBAYASHI ,  Hiroyuki TOMISU

IPC: H01L29/786 ,  H01L27/06 ,  G02F1/1368 ,  H01L21/822 ,  H01L29/04

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F2201/58 ,  H01L21/8221 ,  H01L27/0688 ,  H01L29/045 ,  H01L29/78696

Abstract: A transistor whose channel is formed in a semiconductor having dielectric anisotropy is provided. A transistor having a small subthreshold swing value is provided. A transistor having normally-off electrical characteristics is provided. A transistor having a low leakage current in an off state is provided. A semiconductor device includes an insulator, a semiconductor, and a conductor. In the semiconductor device, the semiconductor includes a region overlapping with the conductor with the insulator positioned therebetween, and a dielectric constant of the region in a direction perpendicular to a top surface of the region is higher than a dielectric constant of the region in a direction parallel to the top surface.

公开(公告)号：US20160035897A1

公开(公告)日：2016-02-04

申请号：US14812028

申请日：2015-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiyuki KOBAYASHI ,  Shinpei MATSUDA ,  Daisuke MATSUBAYASHI ,  Hiroyuki TOMISU

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F2201/58 ,  H01L21/8221 ,  H01L27/0688 ,  H01L29/045 ,  H01L29/78696

Abstract: A transistor whose channel is formed in a semiconductor having dielectric anisotropy is provided. A transistor having a small subthreshold swing value is provided. A transistor having normally-off electrical characteristics is provided. A transistor having a low leakage current in an off state is provided. A semiconductor device includes an insulator, a semiconductor, and a conductor. In the semiconductor device, the semiconductor includes a region overlapping with the conductor with the insulator positioned therebetween, and a dielectric constant of the region in a direction perpendicular to a top surface of the region is higher than a dielectric constant of the region in a direction parallel to the top surface.

Abstract translation: 提供其沟道形成在具有介电各向异性的半导体中的晶体管。 提供具有小的亚阈值摆动值的晶体管。 提供具有常关电特性的晶体管。 提供了处于断开状态的具有低泄漏电流的晶体管。 半导体器件包括绝缘体，半导体和导体。 在半导体器件中，半导体包括与绝缘体位于其间的与导体重叠的区域，并且该区域在与该区域的顶表面垂直的方向上的介电常数高于该区域的方向上的介电常数 平行于顶面。