Resin solution and method of forming a protection layer
    1.
    发明授权
    Resin solution and method of forming a protection layer 有权
    树脂溶液和形成保护层的方法

    公开(公告)号:US07528188B2

    公开(公告)日:2009-05-05

    申请号:US10862338

    申请日:2004-06-08

    IPC分类号: C08K5/10 C08K5/09 C08L71/10

    CPC分类号: C08L61/06

    摘要: A resin solution usable for forming a protection layer, including an organic solvent and a resol resin. The resin solution may further include any combination of a cross-linking agene or agent(s), a photo active compound (PAC) or compounds(s), and/or development accelerator or accelerator(s) a method forming a cured resin layer, including applying a resin solution, including a resol resin, directly or indirectly on a substrate and hard baking the resin solution to form the cured resin layer. The resin solution may include a resol resin and/or a novolac resin.

    摘要翻译: 可用于形成保护层的树脂溶液,包括有机溶剂和甲阶酚醛树脂。 树脂溶液还可以包括交联的一个或多个化合物,光活性化合物(PAC)或化合物和/或显影促进剂或促进剂的任何组合,形成固化树脂层 包括将包含甲阶酚醛树脂的树脂溶液直接或间接地施加到基板上,并硬化烘烤树脂溶液以形成固化树脂层。 树脂溶液可以包括甲阶酚醛树脂和/或酚醛清漆树脂。

    SIDE KEY FLEXIBLE CIRCUIT BOARD FOR MOBILE TELECOMMUNICATION TERMINAL
    2.
    发明申请
    SIDE KEY FLEXIBLE CIRCUIT BOARD FOR MOBILE TELECOMMUNICATION TERMINAL 失效
    用于移动电信终端的侧面灵活电路板

    公开(公告)号:US20070171208A1

    公开(公告)日:2007-07-26

    申请号:US11626776

    申请日:2007-01-24

    IPC分类号: G06F3/02

    CPC分类号: H04M1/236 H05K1/189

    摘要: The present invention relates to an apparatus for supporting a function key of a mobile communication terminal. The apparatus includes a flexible printed circuit for electrically connecting a plurality of function keys to the mobile communication terminal, wherein the flexible printed circuit is conformable to a shape of a mounting space the plurality of function keys are mounted in, and a plurality of supporting members, wherein each supporting member corresponds to at least one of the plurality of function keys for supporting the at least one of the plurality of function keys within the mounting space, wherein the flexible printed circuit connects the plurality of supporting members to each other by attaching to a surface of the supporting members.

    摘要翻译: 本发明涉及一种用于支持移动通信终端的功能键的装置。 该装置包括用于将多个功能键电连接到移动通信终端的柔性印刷电路,其中柔性印刷电路与安装有多个功能键的安装空间的形状一致,以及多个支撑构件 ,其中每个支撑构件对应于所述多个功能键中的至少一个用于在所述安装空间内支撑所述多个功能键中的所述至少一个功能键,其中所述柔性印刷电路通过将所述多个支撑构件连接到 支撑构件的表面。

    Wave generation apparatus
    3.
    发明授权
    Wave generation apparatus 失效
    波发生装置

    公开(公告)号:US06527696B1

    公开(公告)日:2003-03-04

    申请号:US09694278

    申请日:2000-10-24

    申请人: Myung Sun Kim

    发明人: Myung Sun Kim

    IPC分类号: A61N204

    CPC分类号: A61N2/02

    摘要: An alpha wave generation apparatus has a voltage controller including a first resistor connected in parallel to an adapter jack and a battery, a converter for supplying power to a microcomputer, a first coil and a diode connected in series between the first resistor and an input terminal of the converter, a second resistor for maintaining an input voltage to the microcomputer constant in level, and a capacitor being charged with an input voltage to the converter or discharging it. The alpha wave generation apparatus generates alpha waves of 4 Hz, 8 Hz, and 10 Hz which, for example, may be used to activate cerebral cells.

    摘要翻译: α波发生装置具有电压控制器,其包括与适配器插座和电池并联连接的第一电阻器,用于向微型计算机供电的转换器,串联连接在第一电阻器和输入端子之间的第一线圈和二极管 的第二电阻器,用于维持微机的输入电压恒定的电平,以及向转换器充电输入电压或放电的电容器。 α波发生装置产生4Hz,8Hz和10Hz的α波,其例如可用于激活脑细胞。

    Side key flexible circuit board for mobile telecommunication terminal
    4.
    发明授权
    Side key flexible circuit board for mobile telecommunication terminal 失效
    移动通信终端侧键柔性电路板

    公开(公告)号:US08457694B2

    公开(公告)日:2013-06-04

    申请号:US11626776

    申请日:2007-01-24

    IPC分类号: H04M1/00 H05K1/00

    CPC分类号: H04M1/236 H05K1/189

    摘要: The present invention relates to an apparatus for supporting a function key of a mobile communication terminal. The apparatus includes a flexible printed circuit for electrically connecting a plurality of function keys to the mobile communication terminal, wherein the flexible printed circuit is conformable to a shape of a mounting space the plurality of function keys are mounted in, and a plurality of supporting members, wherein each supporting member corresponds to at least one of the plurality of function keys for supporting the at least one of the plurality of function keys within the mounting space, wherein the flexible printed circuit connects the plurality of supporting members to each other by attaching to a surface of the supporting members.

    摘要翻译: 本发明涉及一种用于支持移动通信终端的功能键的装置。 该装置包括用于将多个功能键电连接到移动通信终端的柔性印刷电路,其中柔性印刷电路与安装有多个功能键的安装空间的形状一致,以及多个支撑构件 ,其中每个支撑构件对应于所述多个功能键中的至少一个用于在所述安装空间内支撑所述多个功能键中的所述至少一个功能键,其中所述柔性印刷电路通过将所述多个支撑构件连接到 支撑构件的表面。

    METHOD OF FORMING A SEMICONDUCTOR DEVICE HAVING AN EPITAXIAL SOURCE/DRAIN
    5.
    发明申请
    METHOD OF FORMING A SEMICONDUCTOR DEVICE HAVING AN EPITAXIAL SOURCE/DRAIN 审中-公开
    形成具有外来源/排水的半导体器件的方法

    公开(公告)号:US20100171181A1

    公开(公告)日:2010-07-08

    申请号:US12640944

    申请日:2009-12-17

    IPC分类号: H01L27/06 H01L21/8238

    摘要: A method of forming a semiconductor device includes forming a device isolation region in a silicon substrate to define an nMOS region and a pMOS region. A p-well is formed in the nMOS region and an n-well in the pMOS region. Gate structures are formed over the p-well and n-well, each gate structure including a stacked structure comprising a gate insulating layer and a gate electrode. A resist mask covers the nMOS region and exposes the pMOS region. Trenches are formed in the substrate on opposite sides of the gate structures of the pMOS region. SiGe layers are grown in the trenches of the pMOS region. The resist mask is removed from the nMOS region. Carbon is implanted to an implantation depth simultaneously on both the nMOS region and the pMOS region to form SiC on the nMOS region and SiGe on the pMOS region.

    摘要翻译: 形成半导体器件的方法包括在硅衬底中形成器件隔离区以限定nMOS区和pMOS区。 在nMOS区域中形成p阱,在pMOS区域中形成n阱。 栅极结构形成在p阱和n阱上,每个栅极结构包括包括栅极绝缘层和栅电极的堆叠结构。 抗蚀剂掩模覆盖nMOS区域并暴露pMOS区域。 沟槽形成在pMOS区域的栅极结构的相对侧上的衬底中。 SiGe层生长在pMOS区域的沟槽中。 从nMOS区域去除抗蚀剂掩模。 在nMOS区域和pMOS区域上同时植入碳到注入深度,以在nMOS区域上形成SiC,在pMOS区域上形成SiGe。