HIGH FREQUENCY ELECTRICAL ELEMENT
    1.
    发明申请
    HIGH FREQUENCY ELECTRICAL ELEMENT 审中-公开
    高频电器元件

    公开(公告)号:US20090231778A1

    公开(公告)日:2009-09-17

    申请号:US12402031

    申请日:2009-03-11

    IPC分类号: H01G5/16 B81B7/02 B81B7/04

    CPC分类号: H01P1/127 H01H59/0009

    摘要: A high frequency MEMS 1 as a high frequency electrical element has a silicon substrate 2 wholly formed with an insulation film, a first signal line 4 provided on the silicon substrate 2, a second signal line 5 provided on the silicon substrate 2, the second signal line 5 crossing the first signal line 4 within a first region above the silicon substrate 2, and a dielectric film 9 interposed between the first signal line 4 and the second signal line 5, and provided on one of the first signal line 4 and the second signal line 5, within the first region, the first signal line 4 and the second signal line 5 being relatively movable in directions for a contacting approach and a mutual spacing in between.

    摘要翻译: 作为高频电气元件的高频MEMS1具有完全由绝缘膜形成的硅基板2,设置在硅基板2上的第一信号线4,设置在硅基板2上的第二信号线5,第二信号 线5在硅衬底2上方的第一区域内与第一信号线4交叉,以及介于第一信号线4和第二信号线5之间的电介质膜9,并且设置在第一信号线4和第二信号线4之一上 信号线5在第一区域内,第一信号线4和第二信号线5在接触方向的方向和相互间的相互间隔相对移动。