Magnetic memory element and magnetic memory apparatus
    1.
    发明授权
    Magnetic memory element and magnetic memory apparatus 有权
    磁存储元件和磁存储装置

    公开(公告)号:US08982611B2

    公开(公告)日:2015-03-17

    申请号:US13526961

    申请日:2012-06-19

    IPC分类号: G11C11/00 G11C11/16

    摘要: A magnetic memory element includes a first magnetic layer, a second magnetic layer, a first intermediate layer, a first magnetic wire, a first input unit, and a first detection unit. The first magnetic layer has magnetization fixed. The second magnetic layer has magnetization which is variable. The first intermediate layer is between the first magnetic layer and the second magnetic layer. The first magnetic wire extends in a first direction perpendicular to a direction connecting from the first magnetic layer to the second magnetic layer and is adjacent to the second magnetic layer. In addition, write-in is performed by propagating a first spin wave through the first magnetic wire and by passing a first current from the first magnetic layer toward the second magnetic layer. Read-out is performed by passing a second current from the first magnetic layer toward the second magnetic layer.

    摘要翻译: 磁存储元件包括第一磁性层,第二磁性层,第一中间层,第一磁性线,第一输入单元和第一检测单元。 第一磁性层具有固定的磁化。 第二磁性层具有可变的磁化。 第一中间层位于第一磁性层和第二磁性层之间。 第一磁性线沿垂直于从第一磁性层连接到第二磁性层的方向的第一方向延伸并与第二磁性层相邻。 此外,通过将第一自旋波传播通过第一磁线并通过使第一电流从第一磁性层向第二磁性层传递来执行写入。 通过将第二电流从第一磁性层传递到第二磁性层来进行读出。

    Magnetic memory and manufacturing method thereof
    2.
    发明授权
    Magnetic memory and manufacturing method thereof 有权
    磁记忆及其制造方法

    公开(公告)号:US09190168B2

    公开(公告)日:2015-11-17

    申请号:US13425471

    申请日:2012-03-21

    IPC分类号: G11C11/14 G11C19/08

    摘要: A magnetic memory includes a first magnetic line, an electrode, a write-in portion, a second magnetic line, and a spin-wave generator. The first magnetic line has a plurality of magnetic domains and domain walls, the domain wall separating the magnetic domain. The electrode is provided to both ends of the first magnetic line. The write-in portion is provided adjacent to the first magnetic line. The second magnetic line is provided so that the second magnetic line intersects with the first magnetic line. The spin-wave generator provided to one end of the second magnetic line. The spin-wave detector provided to the other end of the second magnetic line.

    摘要翻译: 磁存储器包括第一磁线,电极,写入部分,第二磁线和自旋波发生器。 第一磁线具有多个磁畴和畴壁,畴壁分离磁畴。 电极设置在第一磁力线的两端。 写入部分设置成与第一磁线相邻。 第二磁线被设置成使得第二磁线与第一磁线相交。 提供给第二磁线的一端的自旋波发生器。 旋转波检测器设置在第二磁线的另一端。

    MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY APPARATUS
    3.
    发明申请
    MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY APPARATUS 有权
    磁记忆元件和磁记忆装置

    公开(公告)号:US20130077396A1

    公开(公告)日:2013-03-28

    申请号:US13526961

    申请日:2012-06-19

    IPC分类号: G11C11/15

    摘要: A magnetic memory element includes a first magnetic layer, a second magnetic layer, a first intermediate layer, a first magnetic wire, a first input unit, and a first detection unit. The first magnetic layer has magnetization fixed. The second magnetic layer has magnetization which is variable. The first intermediate layer is between the first magnetic layer and the second magnetic layer. The first magnetic wire extends in a first direction perpendicular to a direction connecting from the first magnetic layer to the second magnetic layer and is adjacent to the second magnetic layer. In addition, write-in is performed by propagating a first spin wave through the first magnetic wire and by passing a first current from the first magnetic layer toward the second magnetic layer. Read-out is performed by passing a second current from the first magnetic layer toward the second magnetic layer.

    摘要翻译: 磁存储元件包括第一磁性层,第二磁性层,第一中间层,第一磁性线,第一输入单元和第一检测单元。 第一磁性层具有固定的磁化。 第二磁性层具有可变的磁化。 第一中间层位于第一磁性层和第二磁性层之间。 第一磁性线沿垂直于从第一磁性层连接到第二磁性层的方向的第一方向延伸并与第二磁性层相邻。 另外,通过将第一自旋波传播通过第一磁线并且通过使第一电流从第一磁性层向第二磁性层传递来执行写入。 通过将第二电流从第一磁性层传递到第二磁性层来执行读出。

    MAGNETIC MEMORY AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    MAGNETIC MEMORY AND MANUFACTURING METHOD THEREOF 有权
    磁记忆及其制造方法

    公开(公告)号:US20130083595A1

    公开(公告)日:2013-04-04

    申请号:US13425471

    申请日:2012-03-21

    IPC分类号: G11C11/14 H01L21/8246

    摘要: A magnetic memory includes a first magnetic line, an electrode, a write-in portion, a second magnetic line, and a spin-wave generator. The first magnetic line has a plurality of magnetic domains and domain walls, the domain wall separating the magnetic domain. The electrode is provided to both ends of the first magnetic line. The write-in portion is provided adjacent to the first magnetic line. The second magnetic line is provided so that the second magnetic line intersects with the first magnetic line. The spin-wave generator provided to one end of the second magnetic line. The spin-wave detector provided to the other end of the second magnetic line.

    摘要翻译: 磁存储器包括第一磁线,电极,写入部分,第二磁线和自旋波发生器。 第一磁线具有多个磁畴和畴壁,畴壁分离磁畴。 电极设置在第一磁力线的两端。 写入部分设置成与第一磁线相邻。 第二磁线被设置成使得第二磁线与第一磁线相交。 提供给第二磁线的一端的自旋波发生器。 旋转波检测器设置在第二磁线的另一端。