公开(公告)号：US06653674B2

公开(公告)日：2003-11-25

申请号：US10227124

申请日：2002-08-23

申请人： Shyue Fong Quek ,  Ting Cheong Ang ,  Sang Yee Loong ,  Puay Ing Ong

发明人： Shyue Fong Quek ,  Ting Cheong Ang ,  Sang Yee Loong ,  Puay Ing Ong

IPC分类号： H01L2976

CPC分类号： H01L29/66772 ,  H01L21/76264 ,  H01L21/76281 ,  H01L27/1203 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66636 ,  H01L29/66825 ,  H01L29/78621

摘要： A semiconductor device is provided having angled dopant implantation and vertical trenches in the silicon on insulator substrate adjacent to the sides of a semiconductor gate. A second dopant implantation is in the exposed the source/drain junctions. Contacts having inwardly curved cross-sectional widths in the semiconductor substrate connect vertically to the exposed source/drain junctions either directly or through salicided contact areas.

公开(公告)号：US06248618B1

公开(公告)日：2001-06-19

申请号：US09415246

申请日：1999-10-12

申请人： Shyue Fong Quek ,  Ting Cheong Ang ,  Puay Ing Ong ,  Sang Yee Loong

发明人： Shyue Fong Quek ,  Ting Cheong Ang ,  Puay Ing Ong ,  Sang Yee Loong

IPC分类号： H01L218238

CPC分类号： H01L21/823857 ,  Y10S438/981

摘要： A method of forming thick and thin gate oxides comprising the following steps. A silicon semiconductor substrate having first and second active areas separated by shallow isolation trench regions is provided. Oxide growth is selectively formed over the first active area by UV oxidation to form a first gate oxide layer having a first predetermined thickness. The first and second active areas are then simultaneously oxidized whereby the first predetermined thickness of the first gate oxide layer is increased to a second predetermined thickness and a second gate oxide layer having a predetermined thickness is formed in the second active area. The second predetermined thickness of the first oxide layer in the first active area is greater than the predetermined thickness of the second oxide layer in the second active area.

摘要翻译： 一种形成厚薄的栅极氧化物的方法，包括以下步骤。 提供具有由浅隔离沟槽区域隔开的第一和第二有源区的硅半导体衬底。 通过UV氧化在第一有源区上选择性地形成氧化物生长，以形成具有第一预定厚度的第一栅氧化层。 然后，第一和第二有源区域被同时氧化，由此第一栅极氧化物层的第一预定厚度增加到第二预定厚度，并且在第二有源区域中形成具有预定厚度的第二栅极氧化物层。 第一有源区中的第一氧化物层的第二预定厚度大于第二有源区中第二氧化物层的预定厚度。

公开(公告)号：US06465296B1

公开(公告)日：2002-10-15

申请号：US10167095

申请日：2002-06-10

申请人： Shyue Fong Quek ,  Ting Cheong Ang ,  Sang Yee Loong ,  Puay Ing Ong

发明人： Shyue Fong Quek ,  Ting Cheong Ang ,  Sang Yee Loong ,  Puay Ing Ong

IPC分类号： H01L218238

CPC分类号： H01L29/66772 ,  H01L21/76264 ,  H01L21/76281 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66636 ,  H01L29/66825 ,  H01L29/78621

摘要： A semiconductor device and manufacturing process therefor is provided in which angled dopant implantation is followed by the formation of vertical trenches in the silicon on insulator substrate adjacent to the sides of the semiconductor gate. A second dopant implantation in the exposed the source/drain junctions is followed by a rapid thermal anneal that forms the semiconductor channel in the substrate. Contacts having inwardly curved cross-sectional widths in the semiconductor substrate are then formed which connect vertically to the exposed source/drain junctions either directly or through salicided contact areas.

摘要翻译： 提供了一种半导体器件及其制造方法，其中倾斜的掺杂剂注入之后是在与半导体栅极的侧面相邻的绝缘体上硅衬底中形成垂直沟槽。 暴露在源极/漏极结中的第二掺杂剂注入之后是在衬底中形成半导体沟道的快速热退火。 然后形成在半导体衬底中具有向内弯曲的横截面宽度的触头，其直接地或通过咸水接触区域垂直连接到暴露的源极/漏极接合点。

公开(公告)号：US06284609B1

公开(公告)日：2001-09-04

申请号：US09435437

申请日：1999-11-22

申请人： Ting Cheong Ang ,  Shyue Fong Quek ,  Puay Ing Ong ,  Sang Yee Loong

发明人： Ting Cheong Ang ,  Shyue Fong Quek ,  Puay Ing Ong ,  Sang Yee Loong

IPC分类号： H01L21336

CPC分类号： H01L29/66628 ,  H01L21/2257 ,  H01L21/28026 ,  H01L21/2807 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/7834

摘要： A new method of fabricating a sub-quarter micron MOSFET device is achieved. A semiconductor substrate is provided. Isolation regions are formed in this substrate. An oxide layer is provided overlying both the substrate and the isolation regions. The oxide layer is patterned and etched exposing two regions of the substrate. A selective epitaxial growth (SEG) is performed with in situ doping covering the two exposed substrate regions formed during the previous step. The doped SEG regions will form the source and drain contact regions of the MOSFET. The oxide layer region between the two doped SEG regions is then patterned and etched away exposing the substrate. This is followed by a gate oxide formation and either a polysilicon or metal gate deposition. Planarization is then performed on the surface to facilitate interconnection later in the process and to form the final gate structure. Thermal energy provided from processing steps or from a rapid thermal anneal (RTA) allows the doping atoms in the SEG regions to diffuse into the substrate thereby forming the active source/drain regions. This method allows precise control of the doping profile in the active source/drain region. An interlevel dielectric is then deposited over the entire surface. Contact holes are then etched in the interlevel dielectric and metalization patterned to allow interconnection to the completed MOSFET device.

摘要翻译： 实现了制造二分之一微米MOSFET器件的新方法。 提供半导体衬底。 在该衬底中形成隔离区。 提供覆盖衬底和隔离区域的氧化物层。 图案化和蚀刻氧化层暴露衬底的两个区域。 通过原位掺杂来执行选择性外延生长（SEG），覆盖在前一步骤期间形成的两个暴露的衬底区域。 掺杂的SEG区域将形成MOSFET的源极和漏极接触区域。 然后将两个掺杂的SEG区域之间的氧化物层区域图案化并蚀刻掉，暴露衬底。 之后是栅极氧化物形成和多晶硅或金属栅极沉积。 然后在表面上执行平面化，以便在该过程中稍后进行互连并形成最终的栅极结构。 从加工步骤或快速热退火（RTA）提供的热能允许SEG区域中的掺杂原子扩散到衬底中，从而形成有源源极/漏极区域。 该方法允许精确控制有源源极/漏极区域中的掺杂分布。 然后在整个表面上沉积层间电介质。 然后在层间电介质中蚀刻接触孔，并图案化金属化，以允许与完成的MOSFET器件互连。

公开(公告)号：US06261917B1

公开(公告)日：2001-07-17

申请号：US09567420

申请日：2000-05-09

申请人： Shyue Fong Quek ,  Ting Cheong Ang ,  Sang Yee Loong ,  Puay Ing Ong

发明人： Shyue Fong Quek ,  Ting Cheong Ang ,  Sang Yee Loong ,  Puay Ing Ong

IPC分类号： H01L2120

CPC分类号： H01L28/40 ,  H01L21/31683 ,  H01L28/75

摘要： A method for fabricating a metal-oxide-metal capacitor is described. A first insulating layer is provided overlying a semiconductor substrate. A barrier metal layer and a first metal layer are deposited over the insulating layer. A titanium layer is deposited overlying the first metal layer. The titanium layer is exposed to an oxidizing plasma while simultaneously a portion of the titanium layer where the metal-oxide-metal capacitor is to be formed is exposed to light whereby the portion of the titanium layer exposed to light reacts with the oxidizing plasma to form titanium oxide. Thereafter, the titanium layer is removed, leaving the titanium oxide layer where the metal-oxide-metal capacitor is to be formed. A second metal layer is deposited overlying the first metal layer and the titanium oxide layer. The second metal layer, titanium oxide layer, and first metal layer are patterned to form a metal-oxide-metal capacitor wherein the second metal layer forms an upper plate electrode, the titanium oxide layer forms a capacitor dielectric, and the first metal layer forms a bottom plate electrode of the MOM capacitor.

摘要翻译： 对金属氧化物 - 金属电容器的制造方法进行说明。 第一绝缘层设置在半导体衬底上。 在绝缘层上沉积阻挡金属层和第一金属层。 沉积钛层沉积在第一金属层上。 将钛层暴露于氧化等离子体，同时将要形成金属 - 氧化物 - 金属电容器的钛层的一部分暴露于光，由此暴露于光的钛层的部分与氧化等离子体反应形成 氧化钛。 然后，除去钛层，留下要形成金属 - 氧化物 - 金属电容器的氧化钛层。 沉积在第一金属层和氧化钛层上的第二金属层。 对第二金属层，氧化钛层和第一金属层进行构图以形成金属氧化物 - 金属电容器，其中第二金属层形成上板电极，氧化钛层形成电容器电介质，第一金属层形成 MOM电容器的底板电极。

公开(公告)号：US06329253B1

公开(公告)日：2001-12-11

申请号：US09434922

申请日：1999-11-05

申请人： Jun Song ,  Yonqzang Zhang ,  Shyue Fong Quek ,  Ting Cheong Ang ,  Jun Cai ,  Puay Ing Ong

发明人： Jun Song ,  Yonqzang Zhang ,  Shyue Fong Quek ,  Ting Cheong Ang ,  Jun Cai ,  Puay Ing Ong

IPC分类号： H01L21336

CPC分类号： H01L29/66621 ,  H01L21/76224 ,  H01L27/0266 ,  H01L29/7834

摘要： A method for forming a novel thick oxide electrostatic discharge device using shallow trench isolation technology is described. A trench is etched into a semiconductor substrate. An oxide layer is deposited overlying the semiconductor substrate and filling the trench. The oxide within the trench is partially etched away leaving the oxide on the sidewalls and bottom of the trench. The oxide is polished away to the surface of the semiconductor substrate whereby oxide remains only on the sidewalls and bottom of the trench. A gate is formed within the trench whereby the gate is surrounded by the oxide. First ions are implanted into the semiconductor substrate adjacent to the trench to form N-wells. Second ions are implanted into the semiconductor substrate in a top portion of the N-wells to form source/drain regions. Third ions are implanted into the semiconductor substrate underlying the N-wells and underlying the trench to form electrostatic discharge trigger taps. This completes formation of an electrostatic discharge device in the fabrication of integrated circuits.

摘要翻译： 描述了使用浅沟槽隔离技术形成新的厚氧化物静电放电装置的方法。 将沟槽蚀刻到半导体衬底中。 沉积在半导体衬底上并填充沟槽的氧化物层。 部分地蚀刻沟槽内的氧化物，留下沟槽的侧壁和底部上的氧化物。 氧化物被抛光到半导体衬底的表面，由此氧化物仅保留在沟槽的侧壁和底部上。 在沟槽内形成栅极，由此栅极被氧化物包围。 将第一离子注入到与沟槽相邻的半导体衬底中以形成N阱。 在N阱的顶部将第二离子注入到半导体衬底中以形成源/漏区。 将第三离子注入位于N阱下方并位于沟槽下方的半导体衬底中以形成静电放电触发抽头。 这就形成了集成电路制造中的静电放电装置。