Abstract:
A method for performing data-accessing management in a storage server and associated apparatus such as a host device, a storage device, etc. are provided. The method includes: in response to a client request of writing a first set of data into the storage server, utilizing the host device within the storage server to trigger broadcasting an internal request corresponding to the client request toward each storage device of a plurality of storage devices within the storage server; and in response to the internal request corresponding to the client request, utilizing said each storage device of the plurality of storage devices to search for the first set of data in said each storage device to determine whether the first set of data has been stored in any storage device, for controlling the storage server completing the client request without duplication of the first set of data within the storage server.
Abstract:
A method for performing data-accessing management in a storage server and associated apparatus such as a host device, a storage device, etc. are provided. The method includes: in response to a client request of writing a first set of data into the storage server, utilizing the host device within the storage server to trigger broadcasting an internal request corresponding to the client request toward each storage device of a plurality of storage devices within the storage server; and in response to the internal request corresponding to the client request, utilizing said each storage device of the plurality of storage devices to search for the first set of data in said each storage device to determine whether the first set of data has been stored in any storage device, for controlling the storage server completing the client request without duplication of the first set of data within the storage server.
Abstract:
A memory access module for performing memory access management of a storage device includes a plurality of storage cells. Each storage cell has a number of possible bit(s) directly corresponding to possible states of the storage cell. The memory access module further includes: sensing means for performing a plurality of sensing operations, wherein a first sensing operation corresponds to a first sensing voltage, and each subsequent sensing operation corresponds to a sensing voltage determined according to a result of the previous sensing operation; generating means for using the plurality of sensing operations to generate a first digital value and a second digital value of a storage cell; processing means for using the first and the second digital value to obtain soft information of a same bit stored in the storage cell; and decoding means for using the soft information to perform soft decoding.
Abstract:
A method for performing memory access management includes: with regard to a same Flash cell of a Flash memory, receiving a first digital value outputted by the Flash memory, requesting the Flash memory to output at least one second digital value, wherein the first digital value and the at least one second digital value are utilized for determining information of a same bit stored in the Flash cell, and a number of various possible states of the Flash cell correspond to a possible number of bit(s) stored in the Flash cell; based upon the second digital value, generating/obtaining soft information of the Flash cell, for use of performing soft decoding; and controlling the Flash memory to perform sensing operations by respectively utilizing a plurality of sensing voltages that are not all the same, in order to generate the first digital value and the second digital value.
Abstract:
A method for performing memory access of a Flash cell of a Flash memory includes: performing a series of sensing operations respectively corresponding to a plurality of sensing voltages, wherein a sensing voltage of a specific sensing operation of the series of sensing operations has a sensing voltage determined according to a result of an initial sensing operation of the series of sensing operations; determining a threshold voltage of the Flash cell according to at least a digital value generated by the series of sensing operations; and using the determined threshold voltage to perform soft decoding of the Flash cell.
Abstract:
A method for performing memory access of a Flash cell of a Flash memory includes: performing a plurality of sensing operations respectively corresponding to a plurality of sensing voltages to generate a first digital value and a second digital value of the Flash cell, the second digital value representing at least one candidate threshold voltage of the Flash cell; determining a threshold voltage of the Flash cell according to whether the at least one candidate threshold voltage is high or low; determining soft information of a bit stored in the Flash cell according to the threshold voltage of the Flash cell; and using the soft information to perform soft decoding.
Abstract:
A method for performing memory access of a Flash cell of a Flash memory includes: performing a first sensing operation corresponding to a first sensing voltage to generate a first digital value of the Flash cell; according to a result of the first sensing operation, performing a plurality of second sensing operations to generate a second digital value of the Flash cell representing at least one candidate threshold voltage of the Flash cell; determining the threshold voltage of the memory Flash cell according to the at least one candidate threshold voltage; determining soft information of a bit stored in the Flash cell according to the threshold voltage of the Flash cell; and using the soft information to perform soft decoding.
Abstract:
A method for performing memory access of a Flash cell of a Flash memory includes: performing a first sensing operation corresponding to a first sensing voltage to generate a first digital value of the Flash cell; according to a result of the first sensing operation, performing a plurality of second sensing operations to generate a second digital value of the Flash cell representing at least one candidate threshold voltage of the Flash cell; determining the threshold voltage of the memory Flash cell according to the at least one candidate threshold voltage; determining soft information of a bit stored in the Flash cell according to the threshold voltage of the Flash cell; and using the soft information to perform soft decoding.
Abstract:
A memory access module for performing memory access management of a storage device including a plurality of storage cells includes: sensing means for performing a plurality of sensing operations respectively corresponding to a plurality of different sensing voltages in order to generate at least a first digital value of a storage cell, wherein each subsequent sensing operation corresponds to a sensing voltage which is determined according to a result of the previous sensing operation; processing means for using the first digital value to obtain soft information of a bit stored in the storage cell; and decoding means for using the soft information to perform soft decoding.
Abstract:
A method for accessing a memory includes: utilizing a Flash memory to perform a plurality of sensing operations with a plurality of different sensing voltages respectively corresponding to the plurality of sensing operations; according to the plurality of sensing operations, generating a first digital value of a Flash cell of the Flash memory; according to the plurality of sensing operations and the first digital value, generating at least a second digital value of the Flash cell; and obtaining soft information of the Flash cell according to the second digital value. The first digital value and the second digital value are used for determining information of a same bit stored in the Flash cell, a number of possible bit(s) of the Flash cell directly corresponds to a number of possible states of the Flash cell, and the obtained soft information is used for performing soft decoding.