公开(公告)号：US20210167762A1

公开(公告)日：2021-06-03

申请号：US16838847

申请日：2020-04-02

Applicant: Silicon Storage Technology, Inc.

Inventor： Ryan Mei ,  XIAOZHOU QIAN ,  HIEU VAN TRAN ,  CLAIRE ZHU

IPC: H03K3/356 ,  H03K19/0185 ,  H03K19/003 ,  H03K19/185

Abstract: An improved level shifter is disclosed. The level shifter is able to achieve a switching time below 1 ns using a relatively low voltage for VDDL, such as 0.75V. The improved level shifter comprises a coupling stage and a level-switching stage. A related method of level shifting is also disclosed.

公开(公告)号：US20210082517A1

公开(公告)日：2021-03-18

申请号：US16813317

申请日：2020-03-09

Applicant: Silicon Storage Technology, Inc.

Inventor： XIAOZHOU QIAN ,  XIAO YAN PI ,  VIPIN TIWARI

IPC: G11C16/14 ,  G11C16/28 ,  G11C7/10

Abstract: A memory device that includes a memory array having pluralities of non-volatile memory cells, a plurality of index memory cells each associated with a different one of the pluralities of the non-volatile memory cells, and a controller. The controller is configured to erase the pluralities of non-volatile memory cells, set each of the index memory cells to a first state, and program first data into the memory array by reading the plurality of index memory cells and determining that a first one of the index memory cells is in the first state, programming the first data into the plurality of the non-volatile memory cells associated with the first one of the index memory cells, and setting the first one of the index memory cells to a second state different from the first state.