公开(公告)号：US11268865B2

公开(公告)日：2022-03-08

申请号：US16674928

申请日：2019-11-05

Applicant: Socionext Inc.

Inventor： Hiroyuki Hamano ,  Takashi Miyazaki

IPC: G01K7/01 ,  G01K3/00

Abstract: A temperature measuring device includes first and second semiconductor elements each of which has a p-n junction, a transistor group including a plurality of transistors of which respective sources are connected to a power source and of which respective gates are connected to each other, the plurality of transistors constituting a current source, the transistor group being configured to output a first current and a second current having a different magnitude from the first current to the first and second semiconductor elements, respectively, and a selector configured to select at least one first transistor and a plurality of second transistors different from the first transistor, from among the plurality of transistors.

公开(公告)号：US09897490B2

公开(公告)日：2018-02-20

申请号：US14618911

申请日：2015-02-10

Applicant: SOCIONEXT INC.

Inventor： Takashi Miyazaki ,  Hiroyuki Hamano

IPC: G01K7/01 ,  H03M1/36 ,  G01K1/16 ,  G01K7/16

CPC classification number: G01K7/01 ,  G01K7/16 ,  H03M1/36

Abstract: In a first sensing state in which a first current flows in a forward direction with respect to a pn junction of a first semiconductor element and a second current of a different magnitude from the first current flows in a forward direction with respect to a pn junction of a second semiconductor element, a difference between a forward direction voltage of the pn junction of the first semiconductor element and a forward direction voltage of the pn junction of the second semiconductor element is converted into a digital value by a computer and acquired as a first digital value. In a second sensing state in which the second current flows in the forward direction in the pn junction of the first semiconductor element and the first current flows in the forward direction in the pn junction of the second semiconductor element, a difference between the forward direction voltage of the pn junction of the first semiconductor element and the forward direction voltage of the pn junction of the second semiconductor element is converted into a digital value by the computer and acquired as a second digital value. A temperature measurement value is computed based on an average value of the first digital value and the second digital value by the computer.