公开(公告)号：US09905531B2

公开(公告)日：2018-02-27

申请号：US14411741

申请日：2013-06-05

Applicant: Soitec

Inventor： Ionut Radu ,  Marcel Broekaart ,  Arnaud Castex ,  Gweltaz Gaudin ,  Gregory Riou

IPC: H01L23/00 ,  H01L21/18 ,  H01L21/306 ,  H01L21/66

CPC classification number: H01L24/83 ,  H01L21/187 ,  H01L21/30604 ,  H01L21/30625 ,  H01L22/12 ,  H01L23/562 ,  H01L24/32 ,  H01L2224/29124 ,  H01L2224/29155 ,  H01L2224/2916 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29176 ,  H01L2224/2918 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83895 ,  H01L2924/01014 ,  H01L2924/0504 ,  H01L2924/10253 ,  H01L2924/201 ,  Y10T428/12493 ,  Y10T428/12639 ,  Y10T428/12646 ,  Y10T428/12653 ,  Y10T428/12674

Abstract: Method for producing a composite structure comprising the direct bonding of at least one first wafer with a second wafer, and comprising a step of initiating the propagation of a bonding wave, where the bonding interface between the first and second wafers after the propagation of the bonding wave has a bonding energy of less than or equal to 0.7 J/m2. The step of initiating the propagation of the bonding wave is performed under one or more of the following conditions: placement of the wafers in an environment at a pressure of less than 20 mbar and/or application to one of the two wafers of a mechanical pressure of between 0.1 MPa and 33.3 MPa. The method further comprises, after the step of initiating the propagation of a bonding wave, a step of determining the level of stress induced during bonding of the two wafers, the level of stress being determined on the basis of a stress parameter Ct calculated using the formula Ct=Rc/Ep, where: Rc corresponds to the radius of curvature (in km) of the two-wafer assembly and Ep corresponds to the thickness (in μm) of the two-wafer assembly. The method further comprises a step of validating the bonding when the level of stress Ct determined is greater than or equal to 0.07.

公开(公告)号：US20150179603A1

公开(公告)日：2015-06-25

申请号：US14411741

申请日：2013-06-05

Applicant: Soitec

Inventor： Ionut Radu ,  Marcel Broekaart ,  Arnaud Castex ,  Gweltaz Gaudin ,  Gregory Riou

IPC: H01L23/00 ,  H01L21/66 ,  H01L21/306

CPC classification number: H01L24/83 ,  H01L21/187 ,  H01L21/30604 ,  H01L21/30625 ,  H01L22/12 ,  H01L23/562 ,  H01L24/32 ,  H01L2224/29124 ,  H01L2224/29155 ,  H01L2224/2916 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29176 ,  H01L2224/2918 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83895 ,  H01L2924/01014 ,  H01L2924/0504 ,  H01L2924/10253 ,  H01L2924/201 ,  Y10T428/12493 ,  Y10T428/12639 ,  Y10T428/12646 ,  Y10T428/12653 ,  Y10T428/12674

Abstract: Method for producing a composite structure comprising the direct bonding of at least one first wafer with a second wafer, and comprising a step of initiating the propagation of a bonding wave, where the bonding interface between the first and second wafers after the propagation of the bonding wave has a bonding energy of less than or equal to 0.7 J/m2. The step of initiating the propagation of the bonding wave is performed under one or more of the following conditions: placement of the wafers in an environment at a pressure of less than 20 mbar and/or application to one of the two wafers of a mechanical pressure of between 0.1 MPa and 33.3 MPa. The method further comprises, after the step of initiating the propagation of a bonding wave, a step of determining the level of stress induced during bonding of the two wafers, the level of stress being determined on the basis of a stress parameter Ct calculated using the formula Ct=Rc/Ep, where: Rc corresponds to the radius of curvature (in km) of the two-wafer assembly and Ep corresponds to the thickness (in μm) of the two-wafer assembly. The method further comprises a step of validating the bonding when the level of stress Ct determined is greater than or equal to 0.07.

Abstract translation: 一种制造复合结构的方法，包括至少一个第一晶片与第二晶片的直接结合，并且包括启动键合波的传播的步骤，其中在所述第一和第二晶片传播之后的所述第一和第二晶片之间的结合界面 波具有小于或等于0.7J / m 2的结合能。 启动粘合波传播的步骤是在以下一个或多个条件下进行的：将晶片放置在小于20毫巴的压力的环境中和/或施加到两个晶片之一的机械压力 在0.1MPa和33.3MPa之间。 该方法还包括在开始粘合波的传播的步骤之后，确定在两个晶片的接合期间引起的应力水平的步骤，根据使用第二晶片计算出的应力参数Ct来确定应力水平 公式Ct = Rc / Ep，其中：Rc对应于两晶片组件的曲率半径（km），Ep对应于两晶片组件的厚度（μm）。 该方法还包括当确定的应力Ct大于或等于0.07时验证接合的步骤。