公开(公告)号：US20240371926A1

公开(公告)日：2024-11-07

申请号：US18312819

申请日：2023-05-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： LIANG-YU SU ,  FU-YU CHU ,  MING-TA LEI ,  RUEY-HSIN LIU ,  YU-CHANG JONG ,  NAN-YING YANG ,  PO-YU CHIANG ,  YU-TING WEI

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/735

Abstract: A method includes: receiving the semiconductor device, wherein the semiconductor device includes: a well region; a doped region; a plurality of gate electrodes; a plurality of source regions; and a plurality of drain regions, wherein the plurality of gate electrodes, the plurality of source region and the plurality of drain regions form a plurality of transistors; and a bulk region disposed in the doped region. A first distance measured between a first transistor of the plurality of transistors and the bulk region is greater than a second distance measured between a second transistor of the plurality of transistors and the bulk region. The method further includes: applying a first voltage to the plurality of drain regions, wherein a first avalanche current generated around the first transistor and shunted through the bulk region is greater than a second avalanche current generated around the second transistor and shunted through the bulk region.

公开(公告)号：US20220333251A1

公开(公告)日：2022-10-20

申请号：US17844080

申请日：2022-06-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： MING-TA LEI ,  CHIA-HUA CHU ,  HSIN-CHIH CHIANG ,  TUNG-TSUN CHEN ,  CHUN-WEN CHENG

IPC: C23F4/00 ,  G01N27/12 ,  G01N33/00

Abstract: The present disclosure provides a gas sensor. The gas sensor includes a substrate, a conductor layer over the substrate, wherein the conductor layer includes a conductive pattern including a plurality of openings, the openings being arranged in a repeating pattern, an insulating layer in the plurality of openings and over a top surface of the conductive pattern, wherein the conductive pattern is embedded in the insulating layer, and a gas sensing film over a portion of the insulating layer.

公开(公告)号：US20240379791A1

公开(公告)日：2024-11-14

申请号：US18314908

申请日：2023-05-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： TA-CHUAN LIAO ,  CHEN-LIANG CHU ,  HSIN-CHIH CHIANG ,  MING-TA LEI ,  TA-YUAN KUNG

IPC: H01L29/66 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78

Abstract: A semiconductor structure includes semiconductor structure includes a metal gate structure, a plurality of dielectric pillars disposed in the metal gate structure, a source/drain structure disposed at tow side of the metal gate structure, and at least a first connecting structure disposed over one of the dielectric pillars and coupled to the metal gate structure. The first connecting structure overlaps the one of the dielectric pillars entirely from a top view. An area of the first connecting structure is greater than an area of the one of the dielectric pillars from the top view.

公开(公告)号：US20240271287A1

公开(公告)日：2024-08-15

申请号：US18637490

申请日：2024-04-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： MING-TA LEI ,  CHIA-HUA CHU ,  HSIN-CHIH CHIANG ,  TUNG-TSUN CHEN ,  CHUN-WEN CHENG

IPC: C23F4/00 ,  G01N27/12 ,  G01N33/00

CPC classification number: C23F4/00 ,  G01N27/128 ,  G01N33/0075

Abstract: The present disclosure provides a gas sensor. The gas sensor includes a substrate, an insulating layer over the substrate, a conductor layer over and in contact with a top surface of the substrate, and a gas sensing film. The conductor layer includes a conductive pattern having a plurality of openings, and the conductive pattern is embedded in the insulating layer. The gas sensing film is formed over a portion of the conductive pattern.

公开(公告)号：US20170102353A1

公开(公告)日：2017-04-13

申请号：US14879018

申请日：2015-10-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： MING-TA LEI ,  CHIA-HUA CHU ,  HSIN-CHIH CHIANG ,  TUNG-TSUN CHEN ,  CHUN-WEN CHENG

IPC: G01N27/406 ,  G01N27/30 ,  C23F4/00 ,  G01N27/407

CPC classification number: C23F4/00 ,  G01N27/128 ,  G01N33/0075

Abstract: Some embodiments of the present disclosure provide a gas sensor in an IOT. The gas sensor includes a substrate, a conductor disposed above the substrate, and a sensing film disposed over the conductor. The conductor has a top-view pattern including a plurality of openings, a minimal dimension of the opening being less than about 4 micrometer; and a perimeter enclosing the opening. Some embodiments of the present disclosure provide a method of manufacturing a gas sensor. The method includes receiving a substrate; forming a conductor, over the substrate; patterning the conductor to form a plurality of openings in the conductor by an etching operation, and forming a gas-sensing film over the conductor. The openings are arranged in a repeating pattern, and a minimal dimension of the opening being about 4 micrometer.

公开(公告)号：US20210226025A1

公开(公告)日：2021-07-22

申请号：US17224956

申请日：2021-04-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： TA-YUAN KUNG ,  RUEY-HSIN LIU ,  CHEN-LIANG CHU ,  CHIH-WEN YAO ,  MING-TA LEI

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L29/06

Abstract: A semiconductor device includes a semiconductor substrate, a gate dielectric, a gate electrode, and a pair of source/drain regions. The gate dielectric is disposed in the semiconductor substrate having an upper boundary lower than an upper surface of the semiconductor substrate, and an upper surface flush with the upper surface of the semiconductor substrate. The gate electrode is disposed over the gate dielectric having a first section over the upper boundary of the gate dielectric and a second section over the upper surface of the gate dielectric. The second section partially covers and partially exposes the upper surface of the gate dielectric. The pair of source/drain regions are disposed on opposing sides of the gate dielectric.

公开(公告)号：US20200295148A1

公开(公告)日：2020-09-17

申请号：US16889781

申请日：2020-06-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： TA-YUAN KUNG ,  RUEY-HSIN LIU ,  CHEN-LIANG CHU ,  CHIH-WEN YAO ,  MING-TA LEI

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L29/06

Abstract: A semiconductor device includes a semiconductor substrate, a gate dielectric, a gate electrode, a pair of source/drain regions, a pair of first well regions, a second well region, a pair of contact regions and a pair of third well regions. The gate dielectric is disposed in the semiconductor substrate having a concave profile that defines an upper boundary lower than an upper surface of the semiconductor substrate. The gate electrode is disposed over the gate dielectric. The pair of source/drain regions are disposed on opposing sides of the gate dielectric. The pair of first well regions are disposed under the pair of source/drain regions. The second well region is disposed between the pair of first well regions. The pair of contact regions are disposed on opposing sides of the pair of source/drain regions. The pair of third well regions are disposed under the pair of contact regions.

公开(公告)号：US20190363165A1

公开(公告)日：2019-11-28

申请号：US15987318

申请日：2018-05-23

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： TA-YUAN KUNG ,  RUEY-HSIN LIU ,  CHEN-LIANG CHU ,  CHIH-WEN YAO ,  MING-TA LEI

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L29/66

Abstract: A semiconductor device includes a semiconductor substrate, a gate dielectric, a gate electrode and a pair of source/drain regions. The gate dielectric is disposed in the semiconductor substrate having a concave profile that defines an upper boundary lower than an upper surface of the semiconductor substrate. The gate electrode is disposed over the gate dielectric. The pair of source/drain regions are disposed on opposing sides of the gate dielectric.